CBI-MCR100-8

S

O

T

–

2

3 Plastic-Encapsulate

 

Thyristors  

S

O

T-23  

,

MCR100- 6  

– 8

 

Silicon

Controlled Rectifier  

1.KATHODE  

FEATURES  

2.  

3.  

GATE  

Current-I

GT

: 200

 

µ

A  

ANODE  

I

V

RRM

/

V

DRM

: MCR100-6

:

400 V  

MCR100-8

:

600 V  

Operating and storage junction temperature range  

T

J

，

T

stg

: -55

℃

to +150

℃  

ELECTRICAL CHARACTERISTICS

（

Ta=25

℃

unless otherwise specified

）  

Parameter  

On state voltage  

Symbol  

Test conditions  

I

TM

=1A  

V

AK

=7V  

M

in  

M

ax  

1.7  

U

nit  

V

*

V

TM  

Gate trigger voltage  

V

GT  

0.8  

V

Peak Repetitive forward and reverse  

blocking voltage  

V

DRM  

I

V

AND  

MCR100-6  

400  

600  

V

RRM  

MCR100-8  

Peak forward or reverse blocking  

Current  

I

DRM  

I

RRM  

V

AK

= Rated  

10  

µA  

V

or V

RRM  

DRM  

Holding current  

I

H  

I

HL

= 20mA ,

V

AK

= 7V  

5

mA  

µA  

µA  

A2  

A1  

5

15  

30  

15  

Gate trigger current  

I

GT  

V

AK

=7V  

A

B

30  

80  

80  

µA  

µA  

200  

* Forward current applied for 1 ms maximum duration

，

duty cycle

≤

1%

。  

Page 1 of 3  

8/11/2017  

Typical Characteristics  

I

GT

——  

T

a  

I

H

——  

T

a  

50  

40  

30  

20  

10  

0

400  

300  

200  

100  

0

Pulsed  

V

AK

=7V  

Pulsed  

I

T

=20mA

、

I

G

=50mA  

25  

50  

75  

100  

125  

25  

50  

75  

100  

125  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

I ——  

V

TM  

V

GT

—— T

a  

T

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

7

6

5

4

3

2

1

0

Pulsed  

I

G

=50mA  

Pulsed  

V

AK

=7V  

T

a

=100

o  

C

T

a

=25

℃  

25  

50  

75  

100  

125  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

ON-STATE VOLTAGE

 

V

TM

(V)  

Page 2 of 3  

8/11/2017  

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

Page 3 of 3  

8/11/2017