CBI-MMBT3904

TRANSISTOR (NPN)  

FEATURES  



Complementary Type The PNP Transistor MMBT3906 is Recommended  

Epitaxial Planar Die Construction  

SOT-23  

1

．

BASE  

2

．

EMITTER  

3

．

COLLECTOR  

MARKING: 1AM  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Value  

Unit  

60  

40  

V

V

V

CBO  

V

CEO  

V

EBO  

I

C  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

6

V

Collector Current  

200  

200  

625  

mA  

T

o

tal Device Dissipation  

ThermalResistanceFromJunction

toAmbient  

mW  

P

C  

℃

/W  

R

θ

JA  

℃

℃

Junction

T

e

mperature  

Storage

T

e

mperature  

150  

T

J  

-55 ~ +150  

T

stg  

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test conditions  

Min  

Max  

Unit  

V

(BR)  

CBO  

I

C

= 10

μ

A, I

E

=0  

60  

40  

6

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

V

(BR)  

I

C

= 1mA,

 

I

B

=0  

V

CEO  

V

(BR)  

EBO  

I

E

=10

μ

A, I

C

=0  

V

I

CBO  

I

CEX  

V

CB

=60

V

,

I

E

=0  

0.1  

50  

μ

A  

nA  

μ

A  

Collector cut-off  

Collector cut-off  

Emitter cut-off  

current  

current  

V

CE

=30

V

,

V

BE(off)

=3V  

V

EB

=5

V

,

I

C

=0  

I

EBO  

0.1  

300  

current  

h

FE(1)  

h

FE(2)  

h

FE(3)  

V

CE(sat)  

V

BE(sat)  

V

CE

=1

V

,

I

C

=10mA  

V

CE

=1

V

,

I

C

= 50mA  

V

CE

=1

V

,

I

C

= 100mA  

I

C

=50mA, I

B

= 5mA  

I

C

= 50mA,

 

I

B

= 5mA  

100  

60  

DC current gain  

30  

0.3  

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

Transition frequency  

Delay Time  

0.95  

300  

MHz  

nS  

nS  

nS  

nS  

f

T  

V

CE

=20

V

,

I

C

=10mA,

f=

100MHz  

V

CC

=3V, V

BE

=-0.5V  

35  

35  

t

d  

I

C

=10mA, I

B1

=-I

B2

=1.0mA  

V

CC

=3V, I

C

=10mA,  

I

B1

=-I

B2

=1mA  

Rise Time  

t

r

200  

50  

Storage Time  

t

s  

Fall Time  

t

f  

1

of

4  

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.  

Typical Characteristics  

MMBT3904  

2

of

4  

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.  

3

of

4  

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.  

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

4

of

4  

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.