CBI-MMBT3906W

MMBT3906W  

PNP Silicon Epitaxial Planar Transistor  

for switching and amplifier applications  

Marking Code:  

3N  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

Value  

Unit  

V

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

40  

40  

V

5

200  

V

Collector Current  

mA  

mW  

Total Power Dissipation  

Junction Temperature  

Storage Temperature Range  

P

tot  

200  

O

C

T

j  

150  

O

C

T

stg  

– 55 to +150  

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MMBT3906W  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at -V

CE

= 1 V, -I

C

= 0.1 mA  

at -V

CE

= 1 V, -I

C

= 1 mA  

at -V

CE

= 1 V, -I

C

= 10 mA  

at -V

CE

= 1 V, -I

C

= 50 mA  

at -V

CE

= 1 V, -I

C

= 100 mA  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

60  

80  

100  

60  

–

–

–

–

–

–

–

300  

–

–

30  

Collector Emitter Cutoff Current  

at -V

CE

= 30 V  

-I

CES  

–

–

50  

50  

–

nA  

nA  

V

Emitter Base Cutoff Current  

at -V

EB

= 3 V  

-I

EBO  

Collector Base Breakdown Voltage  

at -I

C

= 10 µA  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

40  

40  

5

Collector Emitter Breakdown Voltage  

at -I

C

= 1 mA  

–

V

Emitter Base Breakdown Voltage  

at -I

E

= 10 µA  

–

V

Collector Emitter Saturation Voltage  

at -I

C

= 10 mA, -I

B

= 1 mA  

at -I

C

= 50 mA, -I

B

= 5 mA  

–

–

0.25  

0.4  

-V

CE(sat)  

V

V

Base Emitter Saturation Voltage  

at -I

C

= 10 mA, -I

B

= 1 mA  

at -I

C

= 50 mA, -I

B

= 5 mA  

0.65  

–

0.85  

0.95  

-V

BE(sat)  

Transition Frequency  

at -V

CE

= 20 V, I

E

= 10 mA, f = 100 MHz  

f

T  

C

ob  

t

d  

250  

–

MHz  

pF  

ns  

Collector Output Capacitance  

at -V

CB

= 10 V, f = 100 KHz  

–

–

–

–

–

4.5  

35  

Delay Time  

at -V

CC

= 3 V, -V

BE(OFF)

= 0.5 V, -I

C

= 10 mA, -I

B1

= 1 mA  

Rise Time  

t

r  

35  

ns  

at -V

CC

= 3 V, -V

BE(OFF)

= 0.5 V, -I

C

= 10 mA, -I

B1

= 1 mA  

Storage Time  

at -V

CC

= 3 V, -I

C

= 10 mA, I

B1

= -I

B2

= -1 mA  

t

stg  

t

f  

225  

75  

ns  

Fall Time  

ns  

at -V

CC

= 3 V, -I

C

= 10 mA, I

B1

= -I

B2

= -1 mA  

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MMBT3906W  

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10/28/2013  

MMBT3906W  

300  

250  

200  

150  

100  

50  

0

0

25  

100  

Ambient Temperature: Ta ( C)  

Fig.10 Power

 

Dissipation vs Ambient Temperature  

125  

50  

75  

150  

O

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