CBI-MMBT5401

MMBT5401  

TRANSISTOR (PNP)  

FEATURES  

SOT-23  

Complementary to MMBT5551  

Ideal for medium power amplification and switching  

1

．

BASE  

2

．

EMITTER  

3

．

COLLECTOR  

MARKING: 2L  

MAXIMUM RATINGS (T

A

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Value  

-160  

-150  

-5  

Units  

V

V

V

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

-0.6  

A

P

C  

0.3  

W

℃

℃

T

j  

150  

T

stg  

Storage Temperature  

-55-150  

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test conditions  

I

C

= -100

µA

I

E

=0  

MIN  

MAX UNIT  

,

V

(BR)CBO  

-160  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

V

V

-150  

V

(BR)CEO

I

C

= -1mA,

 

I

B

=0  

I

E

= -10

µA  

, I

C

=0  

-5  

V

(BR)EBO  

-0.1  

µA  

I

CB  

V

CB

=-120 V,

 

I

E

=0  

V

EB

=-4V ,

 

I

C

=0  

O

-0.1  

µA  

I

EBO  

h

FE1  

h

FE2  

h

FE3  

Emitter cut-off current  

80  

V

CE

= -5

V

,

 

I

C

= -1mA  

V

CE

= -5

V

,

 

I

C

=-10mA  

V

CE

= -5

V

,

 

I

C

=-50mA  

100  

300  

DC current gain  

50  

-0.5  

V

V

CE

(sat) I

C

=-50 mA,

 

I

B

= -5mA  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

-1  

V

BE

(sat) I

C

= -50 mA,

 

I

B

= -5mA  

V

V

CE

= -5

V

,

 

I

C

= -10mA  

f

T  

Transition frequency  

100  

MHz  

Page 1 of 3  

5/30/2011  

Typical Characteristics  

MMBT5401  

Page 2 of 3  

5/30/2011  

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

Page 3 of 3  

5/30/2011