CBI-MMBT5451DW
| Part # | CBI-MMBT5451DW |
Download  | CBI-MMBT5451DW |
Plastic-Encapsulate Transistors
TRANSISTOR (NPN+PNP)
DUAL
ꢀ ꢀ ꢀ ꢀ
FEATURES
ꢀꢁꢂꢃꢄꢅꢄꢆ
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ꢀ
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ꢀ
Epitaxial Planar Die Construction
6
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5
Ideal for low Power Amplification and Switching
One 5551(NPN), one 5401(PNP)
4
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
1
2
3
MRKING:KNM
MAXIMUM RATINGS NPN 5551 (T
a
=25
ꢀ
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector- Base Voltage
Value
180
160
6
Units
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction
T
e
mperature
0.2
A
P
C
0.2
W
R
©
625
150
-55-150
ꢀ/W
ꢀ
ꢀ
JA
T
J
T
stg
Storage
T
e
mperature
ELECTRICAL CHARACTERISTICS NPN 5551 (T
a
=25
ꢀ
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=100ꢀA,I
E
=0
V
(BR)CEO
I
C
=1mA,I
B
=0
V
(BR)EBO
I
E
=10ꢀA,I
C
=0
180
160
6
V
V
V
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CB
=120
V
,
I
E
=0
0.05
ꢀA
ꢀA
Emitter cut-off current
V
EB
=4
V
,
I
C
=0
0.05
V
CE
=5
V
,
I
C
=1mA
80
DC current gain
V
CE
=5
V
,
I
C
=10mA
V
CE
=5
V
,
I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CB
= 10
V
, f =
1
.0MHz, I
E
= 0
100
30
300
0.15
0.2
1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
V
BE(sat)
1
V
Output Capacitance
C
obo
f
T
6.0
300
pF
MHz
Current Gain-Bandwidth Product
V
CE
= 10
V
,
I
C
= 10mA, f = 100MHz
V
CE
= 5.0
V
,
I
C
= 200μA,
100
Noise Figure
NF
8.0
dB
R
S
= 1.0k
¡ꢀ
f = 1.0kHz
1
of
3
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.
MAXIMUM RATINGS PNP 5401 (T
a
=25
ꢀ
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector- Base Voltage
Value
-160
-150
-5
Units
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Junction
T
e
mperature
-0.2
A
P
C
0.2
W
R
©
625
ꢀ/W
ꢀ
JA
T
J
150
T
stg
Storage
T
e
mperature
-55-150
ꢀ
ELECTRICAL CHARACTERISTICS PNP 5401 (T
a
=25
ꢀ
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=-100ꢀA,I
E
=0
V
(BR)CEO
I
C
=-1mA,I
B
=0
V
(BR)EBO
I
E
=-10ꢀA,I
C
=0
-160
-150
-5
V
V
V
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CB
=-120
V
,
I
E
=0
-50
nA
nA
Emitter cut-off current
V
EB
=-3
V
,
I
C
=0
-50
V
CE
=-5
V
,
I
C
=-1mA
V
CE
=-5
V
,
I
C
=-10mA
V
CE
=-5
V
,
I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CB
=-10
V
, f =
1
.0MHz, I
E
= 0
50
DC current gain
100
50
300
-0.2
-0.5
-1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
V
BE(sat)
-1
V
Output Capacitance
C
obo
f
T
6.0
300
pF
MHz
Current Gain-Bandwidth Product
V
CE
=-10
V
, I
C
=-10mA, f = 100MHz
V
CE
=-5.0
V
,
I
C
=-200μA,
100
Noise Figure
NF
8.0
dB
R
S
= 10
¡ꢀ
f = 1.0kHz
2
of
3
a
Copyright
©
All right reserved
：
Heyuan China Base Electronics Technology Co., Ltd.
SOT-363-Package Outline Dimensions
3
of
3
Copyright
©
All right reserved
:
Heyuan China Base Electronics Technology Co., Ltd.
