CBI-MMBTA42

SOT-23 Plastic-Encapsulate Transistors  

MMBTA42

TRANSISTOR (NPN)  

FEATURES  

SOT-23  

z

z

z

High breakdown voltage  

1. BASE  

Low collector-emitter saturation voltage  

Complementary to MMBTA92 (PNP)  

2. EMITTER  

3. COLLECTOR  

Marking: 1D  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

300  

300  

5

Unit  

Collector-Base Voltage  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

V

Collector Current -Continuous  

Collector Curren

t-Peak  

0

.3  

A

0.5  

I

C

M  

A

Collector Power dissipation  

Thermal Resistance, junction to Ambient  

Junction

T

e

mperature  

P

C  

0.35  

357  

W

℃

/W  

℃

R

Ө

JA  

T

J  

150  

Storage

T

e

mperature  

T

stg  

-55

~

+150  

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

T

e

st conditions  

Min  

300  

Max  

Unit  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

(BR)CBO

I

C

= 100

μ

A,I

E

=0  

V

V

(BR)CEO

I

C

= 1mA, I

B

=0  

300  

5

V

V

V

(BR)EBO  

I

CBO  

I

E

= 100

μ

A, I

C

=0  

V

CB

=200

V

,

I

E

=0  

0.25  

0.1  

μ

A  

μ

A  

Emitter cut-off current  

I

EBO  

V

EB

= 5

V

,

I

C

=0  

h

FE(1)  

h

FE(2)  

h

FE(3)  

V

CE

(sat)  

V

BE

(sat)  

V

CE

= 10

V

,

I

C

= 1mA  

V

CE

= 10

V

,

I

C

=10mA  

V

CE

=10

V

,

I

C

=30mA  

I

C

=20mA, I

B

= 2mA  

60  

100  

60  

DC current gain  

200  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

0.2  

0.9  

V

V

I

C

= 20mA, I

B

=2mA  

V

CE

= 20

V

,

I

C

= 10mA,  

f=

30MHz  

Transition frequency  

50  

MHz  

f

T  

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7/19/2011  

Typical Characteristics  

V

CE  

h

FE

——  

I

C  

I

C

——  

1000  

100  

10  

18  

16  

14  

12  

10  

8

90uA  

80uA  

70uA  

60uA  

50uA  

40uA  

30uA  

20uA  

I

B

=10uA  

COMMON  

EMITTER  

T

a

=25

℃

 

T

a

=100

℃  

T

a

=25

℃  

6

4

2

COMMON EMITTER  

V

0

0.1  

1

10  

100  

0

2

4

6

8

10  

12  

14  

16  

18  

20  

22  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

COLLECTOR CURRENT

 

I

C

(mA)  

V

CEsat

——  

V

BEsat

—— I

C  

I

C  

900  

500  

T

a

=25

℃  

600  

T

a

=100

℃  

T

a

=25

℃  

100  

T

a

=100

℃  

β

=10  

β

=10  

100  

10  

300  

0.1  

0.1  

1

10  

1

10  

100  

100  

150  

COLLECTOR CURREMT

 

I

C

(mA)  

COLLECTOR CURREMT

 

I

C

(mA)  

I

C

——  

V

BE  

f

T

——  

I

C  

100  

10  

1

300  

100  

COMMON EMITTER  

V

CE

=20V  

COMMON EMITTER  

V

T

a

=25

℃  

0.1  

10  

0.1  

0

300  

600  

900  

1200  

1

10  

COLLECTOR CURRENT

 

I

C

(mA)  

BASE-EMMITER VOLTAGE

 

V

BE

(mV)  

C

ob

/C

ib

——  

V

CB

/V

EB  

P

C

—— T

a  

100  

400  

300  

200  

100  

0

f=1MHz  

I

E

=0/I

C

=0  

T

a

=25

℃  

C

ib  

10  

C

ob  

1

0.1  

1

REVERSE VOLTAGE  

10  

20  

0

25  

50  

75  

100  

125  

V

(V)  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

Page 2 of 3  

7/19/2011  

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

Page

3

o

f 3  

7/19/2011