CBI-MMBTSC3356-3G

MMBTSC3356

NPN Silicon Epitaxial Planar Transistor  

for microwave low noise amplifier at VHF,  

UHF and CATV band  

The transistor is subdivided into three  

groups, Q, R and S, according to its DC  

current gain.  

1.Base 2.Emitter 3.Collector  

SOT-23 Plastic Package  

HFE  

Q

MARKING  

R23  

R

R24  

S

R25  

O

Absolute

Maximum Ratings

(T

a

=

25 C)  

Parameter  

Symbol  

Value  

Unit  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

V

CBO  

V

CEO  

V

EBO  

I

C  

20  

V

V

12  

3

100  

V

mA  

mW  

Power Dissipation  

P

tot  

T

j  

200  

O

Junction Temperature  

Storage Temperature Range  

150  

C

O

T

S  

– 65 to + 150  

C

O

Characteristics

(T

a

=

25 C)  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 10 V, I

C

= 20 mA  

Current Gain Group  

Q

R

S

h

FE  

h

FE  

h

FE  

50  

80  

125  

–

–

–

100  

160  

250  

–

–

–

Collector Cutoff Current  

at V

CB

= 10 V  

I

CBO  

I

EBO  

f

T  

–

–

–

–

–

–

–

1

1

–

µA  

µA  

Emitter Cutoff Current  

at V

EB

= 1 V  

Gain Bandwidth Product  

at V

CE

= 10 V, I

C

= 20 mA  

3

GHz  

pF  

Feed-Back Capacitance  

at V

CB

= 10 V, f = 1 MHz  

1)  

C

re  

NF  

0.55  

1.1  

1

2

Noise Figure  

at V

CE

= 10 V, I

C

= 7 mA, f = 1 GHz  

dB  

1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.  

1

2

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

3