CBI-MMBTSC4081W

NPN Silicon Epitaxial Planar Transistor  

The transistor is subdivided into three groups Q, R  

and S according to its DC current gain.  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Collector Base Voltage  

Symbol  

Value  

Unit  

V

V

CBO  

V

CEO  

V

EBO  

I

C  

60  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

50  

V

7

150  

V

mA  

mW  

Power Dissipation  

P

tot  

T

j  

200  

O

C

Junction Temperature  

Storage Temperature Range  

150  

O

C

T

stg  

– 55 to + 150  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 6 V, I

C

= 1 mA

 

Current Gain Group  

Q

R

S

h

FE  

h

FE  

h

FE  

120  

180  

270  

–

–

–

270  

390  

560  

–

–

–

Collector Base Cutoff Current  

at V

CB

= 60 V  

I

CBO  

I

EBO  

–

–

–

0.1  

0.1  

–

µA  

µA  

V

Emitter Base Cutoff Current  

at V

EB

= 7 V  

–

Collector Base Breakdown Voltage  

at I

C

= 50 µA  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

V

CE(sat)  

f

T  

60  

50  

7

–

–

Collector Emitter Breakdown Voltage  

at I

C

= 1 mA  

–

–

V

Emitter Base Breakdown Voltage  

at I

E

= 50 µA  

–

–

–

V

Collector Emitter Saturation Voltage  

at I

C

= 50 mA, I

B

= 5 mA  

0.4  

–

V

Transition Frequency  

at V

CE

= 12 V, -I

E

= 2 mA, f = 100 MHz  

–

180  

2

MHz  

pF  

Collector Output Capacitance  

at V

CB

= 12 V, f = 1 MHz  

C

ob  

–

3.5  

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Heyuan China Base Electronics Technology Co., Ltd.  

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