CBI-MMDT2222ADW

Part #	CBI-MMDT2222ADW
Download	CBI-MMDT2222ADW

Plastic-Encapsulate Transistors

DUAL TRANSISTOR (NPN+NPN)

SOT-363

FEATURE

Complementary PNP Type available MMDT2907ADW

MARKING: K1P

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)

Symbol

V

CBO

V

CEO

V

EBO

I

C

Para

m

eter

V

alue

75

Units

V

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

40

V

6

V

Collector Current -Continuous

Collector Power Dissipation

Junction

T

e

mperature

Storage

T

e

mperature

600

200

150

-55-150

mA

mW

℃

P

C

T

J

T

stg

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃

unless otherwise specified)

Parameter

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

T

e

st conditions

Min

75

40

6

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I

C

= 10

μ

A, I

E

=0

V

V

I

C

= 10mA, I

B

=0

I

E

=10

μ

A.I

C

=0

V

V

CB

= 60

V

,

I

E

=0

10

10

10

nA

nA

nA

Collector cut-off current

I

CEX

V

CE

= 60

V

,

V

EB(

o

ff)

=3V

V

EB

= 3 V, I

C

=0

Emitter cut-off current

I

EBO

h

FE(1)

V

CE

=10

V

,

I

C

= 0.1mA

V

CE

=10

V

,

I

C

= 1mA

V

CE

=10

V

,

I

C

= 10mA

V

CE

=10

V

,

I

C

= 150mA

V

CE

=10

V

,

I

C

= 500mA

35

50

h

FE(2)

h

FE(3)

75

DC current gain

h

FE(4)

100

40

300

h

FE(5)

h

FE(6)

V

CE(sat)1

V

CE(sat)2

V

BE(sat)1

V

BE(sat)2

V

CE

=1

V

,

I

C

= 150mA

I

C

=150mA, I

B

= 15mA

I

C

=500mA, I

B

= 50mA

I

C

=150mA, I

B

=15mA

I

C

=500mA, I

B

= 50mA

35

0.3

1

V

V

V

V

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

0.6

1.2

2

V

CE

=20

V

,

I

C

= 20mA,

f

T

300

MHz

f=100MHz

Output Capacitance

Input Capacitance

C

ob

C

ib

V

CB

=10

V

,

I

E

=0,f=1MHz

V

EB

=0.5

V

,

I

C

= 0,f=1MHz

8

pF

pF

25

V

_{CE
=10
V
,
I
C
=100
μ
A,}

Noise Figure

NF

4

dB

f=1KHz,Rs=1K

Ω

Switching characteristics

Pa

r

ameter

Delay time

Rise time

Symbol

Test c

o

nditions

M

in

M

ax

Unit

nS

t

d

t

r

10

25

V

V

_{CC
=30
V
,
I
C
=150mA,}

_{BE(off)
=0.5
V
,
I
B1
=15mA}

nS

Storage time

Fall time

t

S

t

f

225

60

nS

V

_{CC
=30
V
,
I
C
=150mA,}

I

_{B1
= -I
B2
= 15mA}

nS

1

of

3

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.

Typical Characteristics

h

FE

—— I

C

Static Characteristic

0.25

0.20

0.15

0.10

0.05

0.00

500

400

300

200

100

0

COMMON EMITTER

V

CE

=10V

1mA

COMMON EMITTER

T

a

=25

℃

0.9mA

0.8mA

0.7mA

T

a

=100

℃

0.6mA

0.5mA

0.4mA

0.3mA

T

a

=25

℃

0.2mA

I

B

=0.1mA

0

2

4

6

8

10

12

600

1.0

80

0.1

1

10

100

600

COLLECTOR-EMITTER VOLTAGE

V

CE

(V)

COLLECTOR CURRENT

I

C

(mA)

V

CEsat

—— I

C

V

BEsat

—— I

C

0.5

0.4

0.3

0.2

0.1

0.0

1.2

0.8

0.4

β

=10

T

a

=25

℃

T

a

=100

℃

T

a

=100

℃

T

a

=25

℃

β

=10

0.0

1

10

100

1

10

100

600

COLLECTOR CURRENT

I

C

(mA)

COLLECTOR CURRENT

I

C

(mA)

I

C

—— V

BE

C

ob

/ C

ib

—— V

CB

/ V

EB

100

600

100

f=1MHz

I

E

=0/ I

C

=0

COMMON EMITTER

V

CE

=10V

T

a

=25

℃

C

ib

T

a

=100

℃

10

C

ob

10

T

a

=25

℃

1

0.1

1

0.1

0.0

0.2

0.4

0.6

0.8

1

10

20

BASE-EMMITER VOLTAGE

V

BE

(V)

REVERSE VOLTAGE

V

(V)

P

c

—— T

a

f

T

—— I

C

300

500

COMMON EMITTER

V

CE

=20V

Ta=25

℃

200

100

0

100

10

0

25

50

75

100

125

150

COLLECTOR CURRENT

I

C

(mA)

AMBIENT TEMPERATURE

Ta (

℃

)

2

of

3

a

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.

SOT-363-Package Outline Dimensions

3

of

3

Copyright

©

All right reserved

:

Heyuan China Base Electronics Technology Co., Ltd.