CBI-MMDT3904DW
| Part # | CBI-MMDT3904DW |
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SOT-363 Plastic-Encapsulate Transistors
DUAL TRANSISTOR (NPN+NPN)
SOT-363
MMDT3904DW
FEATURES
z
Epitaxial planar die construction
z
Ideal for low power amplification and switching
MARKING:K6N
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Value
60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
EBO
I
C
40
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature
0.2
A
P
C
0.2
W
℃
℃
T
J
150
-55-150
T
stg
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
T
e
st conditions
Min
60
40
5
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CBO
I
C
=10
μ
A,I
E
=0
V
(BR)CEO
I
C
=1mA,I
B
=0
V
(BR)EBO
I
E
=10
μ
A,I
C
=0
V
V
V
I
CBO
I
EBO
V
CB
=30
V
,
I
E
=0
0.05
0.05
0.05
μ
A
μ
A
μ
A
Emitter cut-off current
V
EB
=5
V
,
I
C
=0
Collector cut-off current
I
C
EX
V
C
E
=30
V
,
V
BE(off)
=
3V
V
CE
=1
V
,
I
C
=0.1mA
V
CE
=1
V
,
I
C
=1mA
V
CE
=1
V
,
I
C
=10mA
V
CE
=1
V
,
I
C
=50mA
V
CE
=1
V
,
I
C
=100mA
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
40
70
DC current gain
100
60
300
30
V
CE(sat)1
I
C
=10mA,I
B
=1mA
V
CE(sat)2
I
C
=50mA,I
B
=5mA
V
BE(sat)1
I
C
=10mA,I
B
=1mA
V
BE(sat)2
I
C
=50mA,I
B
=5mA
0.2
0.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.65
300
0.85
0.95
V
V
Transition frequency
V
CE
=20
V
,
I
C
=10mA,f=100MHz
MHz
pF
f
T
Collector output capacitance
C
ob
NF
V
CB
=5
V
,
I
E
=0,f=1MHz
4
Noise figure
Delay time
Rise time
V
CE
=5
V
,
I
c
=0.1mA,f=1kHz,R
S
=1K
Ω
5
dB
nS
nS
35
35
t
d
t
r
V
CC
=3
V
,
V
BE(off)
=-0.5V
I
C
=10mA , I
B1
=-I
B2
= 1mA
Storage time
Fall time
200
50
nS
nS
t
s
t
f
V
CC
=3
V
,
I
C
=10mA
I
B1
=-I
B2
=1mA
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TYPICAL TRANSIENT CHARACTERISTICS
T =
25
°
C
J
T =
125
°
C
J
10
5000
V
= 40 V
CC
I /I
= 10
3000
2000
7.0
C B
5.0
1000
700
C
ibo
500
3.0
2.0
Q
T
300
200
C
obo
Q
A
100
70
1.0
0.1
50
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0
10
20 30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I ,
COLLECTOR CURRENT (mA)
C
Figure 3. Capacitance
Figure 4. Charge Data
500
500
I /I
= 10
C B
V
= 40 V
CC
I /I
= 10
300
200
300
200
C B
100
70
100
70
t @
V =
3.0 V
r CC
50
50
30
20
30
20
40 V
15 V
10
10
7
2.0 V
7
5
t @
V =
0 V
OB
d
5
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
200
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 5. Turn–On Time
Figure 6. Rise Time
500
500
1
t
′
= t
– / t
I
s
s
= I
8 f
V
I
= 40 V
CC
= I
300
200
300
200
B1 B2
I /I
= 20
C B
I /I
= 10
C B
B1 B2
I /I
= 20
C B
100
70
100
70
I /I
= 20
C B
50
50
I /I
= 10
C B
I /I
= 10
C B
30
20
30
20
10
10
7
7
5
5
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
200
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70
100
200
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 7. Storage Time
Figure 8. Fall Time
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TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
= 5.0 Vdc, T
= 25
°
C, Bandwidth = 1.0 Hz)
CE
A
12
10
8
14
SOURCE RESISTANCE = 200
W
= 1.0 mA
f = 1.0 kHz
I
= 1.0 mA
C
I
C
12
I
C
= 0.5 mA
10
8
SOURCE RESISTANCE = 200
W
= 0.5 mA
I
C
= 50
m
A
I
C
6
4
I
C
= 100
m
A
SOURCE RESISTANCE = 1.0 k
= 50
m
A
6
4
2
0
I
C
2
0
SOURCE RESISTANCE = 500
W
= 100
m
A
I
C
0.1 0.2
0.4
1.0 2.0 4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R ,
SOURCE RESISTANCE (k OHMS)
S
Figure 9. Noise Figure
Figure 10. Noise Figure
h PARAMETERS
(V
= 10 Vdc, f = 1.0 kHz, T
= 25
°
C)
CE
A
300
200
100
50
20
10
5
100
70
50
30
2
1
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 11. Current Gain
Figure 12. Output Admittance
20
10
10
7.0
5.0
5.0
2.0
3.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
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TYPICAL STATIC CHARACTERISTICS
2.0
1.0
T
= +125
°
C
J
V
CE
= 1.0 V
+25
°
C
0.7
0.5
-ā55
°
C
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I ,
COLLECTOR CURRENT (mA)
C
Figure 15. DC Current Gain
1.0
0.8
0.6
0.4
T
= 25
°
C
J
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.2
0
0.01
0.02
0.03
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I ,
BASE CURRENT (mA)
B
Figure 16. Collector Saturation Region
1.2
1.0
0.8
1.0
T
= 25
°
C
J
V
@ I
/I =10
C B
BE(sat)
+25
°
C TO +125
°
C
-ā55
°
C TO +25
°
C
0.5
0
q
FOR V
CE(sat)
VC
V
@ V
=1.0 V
CE
BE
0.6
0.4
-ā0.5
-ā1.0
-ā55
°
C TO +25
°
C
+25
°
C TO +125
°
C
V
@ I
/I =10
C B
CE(sat)
q
FOR V
BE(sat)
VB
0.2
0
-ā1.5
-ā2.0
1.0
2.0
5.0
10
20
50
100
200
0
20
40
60
80 100
120 140
160 180
200
I ,
COLLECTOR CURRENT (mA)
C
I ,
COLLECTOR CURRENT (mA)
C
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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2/28/2013
