CBI-MMDT3946DW

SOT-363 Plastic-Encapsulate Transistors  

DUAL TRANSISTOR (NPN+PNP)  

MMDT3946DW  

SOT-363  

FEATURES  

z

Complementary Pair  

z

One 3904-Type NPN  

One 3906-Type PNP  

z

z

Epitaxial Planar Die Construction  

Ideal for Low Power Amplification and Switching  

MAKING: K46  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Value  

60  

Units  

V

40  

V

5

V

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

0.2  

A

P

C  

0.2  

W

℃

℃

T

J  

150  

-55-150  

T

stg  

Storage

T

e

mperature  

NPN 3904 ELECTRICAL CHARACTERISTICS (Ta=25

℃

unless otherwise specified)  

Parameter  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test  

conditions  

M

in  

60  

40  

5

M

ax  

U

nit  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

I

C

= 10

μ

A, I

E

=0  

I

C

= 1mA,

 

I

B

=0  

V

I

E

= 10

μ

A, I

C

=0  

V

V

CB

= 30 V ,

 

I

E

=0  

V

CE

= 30 V ,

 

I

B

=0  

V

EB

= 5V ,

 

I

C

=0  

0.05  

0.5  

μ

A  

μ

A  

μ

A  

Collector cut-off current  

I

CEO  

Emitter cut-off current  

I

EBO  

0.05  

h

FE(1)  

V

CE

= 1

V

,

 

I

C

= 0.1mA  

V

CE

= 1

V

,

 

I

C

= 1mA  

V

CE

= 1

V

,

 

I

C

= 10mA  

V

CE

= 1

V

,

 

I

C

= 50mA  

V

CE

= 1

V

,

 

I

C

= 100mA  

I

C

=10 mA,

 

I

B

= 1mA  

I

C

=50 mA,

 

I

B

= 5mA  

I

C

= 10 mA,

 

I

B

= 1mA  

I

C

= 50 mA,

 

I

B

= 5mA  

V

CE

=20

V

,

I

C

=20mA, f=100MHz  

40  

70  

h

FE(2)  

DC current gain  

h

FE(3)  

100  

60  

300  

h

FE(4)  

h

FE(5)  

30  

V

CE(sat)1  

V

CE(sat)2  

V

BE(sat)1  

V

BE(sat)2  

0.2  

0.3  

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

0.65  

300  

0.85  

0.95  

V

V

Transition frequency  

Noise figure  

f

T  

MHz  

V

NF  

5

dB  

f=1KHz,Rg=1K

Ω  

Output

c

apacitance  

Delay time  

C

ob  

t

d  

V

CB

=5

V

,

I

E

=0,f=1MHz  

4

35  

pF  

nS  

nS  

nS  

nS  

V

I

C

=10mA , I

B1

=- I

B2

=1mA  

Rise time  

t

r  

35  

Storage time  

Fall time  

t

S  

t

f  

200  

50  

V

CC

=3

V

,

I

C

=10mA  

I

B1

=-I

B2

= 1mA  

Page 1 of 3  

2/28/2015  

MAXIMUM RATINGS(T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

-40  

Unit

s  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

-40  

V

-5  

V

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

-0.2  

0.2  

A

P

C  

W

℃

℃

T

J  

150  

Storage

T

e

mperature  

T

stg  

-55-150  

PNP 3906 ELECTRICAL CHARACTERISTICS (Ta=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test conditions  

M

in  

-40  

-40  

-5  

T

yp  

M

ax  

U

nit  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

(BR)CBO

I

C

=-10

μ

A,I

E

=0  

V

(BR)CEO

I

C

=-1mA,I

B

=0  

V

(BR)EBO

I

E

=-10

μ

A,I

C

=0  

V

V

I

CBO  

I

EBO  

V

CB

=-30

V

,

I

E

=0  

-0.05  

-0.05  

μ

A  

μ

A  

Emitter cut-off current  

V

EB

=-5

V

,

I

C

=0  

h

FE(1)  

h

FE(2)  

h

FE(3)  

h

FE(4)  

h

FE(5)  

V

CE

=-1

V

,

I

C

=-0.1mA  

V

CE

=-1

V

,

I

C

=-1mA  

V

CE

=-1

V

,

I

C

=-10mA  

V

CE

=-1

V

,

I

C

=-50mA  

V

CE

=-1

V

,

I

C

=-100mA  

60  

80  

DC current gain  

100  

60  

300  

30  

V

CE(sat)1

I

C

=-10mA,I

B

=-1mA  

V

CE(sat)2

I

C

=-50mA,I

B

=-5mA  

V

BE(sat)1

I

C

=-10mA,I

B

=-1mA  

V

BE(sat)2

I

C

=-50mA,I

B

=-5mA  

-0.25  

-0.4  

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

-0.65  

250  

-0.85  

-0.95  

V

V

Transition frequency  

f

T  

V

CE

=-20

V

,

I

C

=-10mA,f=100MHz  

V

CB

=-5

V

,

I

E

=0,f=1MHz  

f=1KH

z

,Rg=1K

Ω  

MHz  

pF  

Collector output capacitance  

C

ob  

4.5  

4

V

Noise figure  

NF  

dB  

Delay time  

Rise time  

Storage time  

Fall time  

t

d  

t

r  

35  

35  

nS  

nS  

nS  

nS  

V

I

C

=-10mA , I

B1

=-I

B2

=-1mA  

t

S  

t

f  

225  

75  

V

CC

=-3

V

,

I

C

=-10mA  

I

B1

=-I

B2

=- 1mA  

Page 2 of 3  

2/28/2015  

Page 3 of 3  

2/28/2015