CBI-MMDT5401DW

Plastic-Encapsulate Transistors  

SOT-363  

DUAL TRANSISTOR (PNP+PNP)  

FEATURES  



Complementary to MMDT5551DW  



Small Surface Mount Package  



Ideal for Medium Power Amplificationand Switching  

MARKING:2L  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

Unit  

V

Collector-Base Voltage  

-160  

Collector-Emitter Voltage  

Emitter-Base Voltage  

-150  

V

-5  

V

Collector Current  

-600  

mA  

mW  

℃

/W  

℃

Collector Power Dissipation  

Thermal Resistance From Junction

T

o Ambient  

Junction

T

e

m

perature  

300  

P

C  

625  

R

ΘJA  

T

j  

150  

Storage

T

e

m

perature  

T

stg  

-55

～

+150  

℃

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test conditions  

Min  

Typ  

Max  

Unit  

V

(BR)CBO  

I

C

=-100µA, I

E

=0  

-160  

V

Collector-base breakdown voltage  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

I

C

=-1mA, I

B

=0  

-150  

-5  

V

V

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

I

E

=-10µA, I

C

=0  

V

CB

=-120V, I

E

=0  

-50  

-50  

nA  

nA  

I

EBO  

V

EB

=-3V, I

C

=0  

Emitter cut-off current  

V

CE

=-5

V

,

I

C

=-1mA  

V

CE

=-5

V

,

I

C

=-10mA  

V

CE

=-5

V

,

I

C

=-50mA  

I

C

=-50mA, I

B

=-5mA  

I

C

=-10mA, I

B

=-1mA  

I

C

=-50mA, I

B

=-5mA  

I

C

=-10mA, I

B

=-1mA  

V

CE

=-10V,I

C

=-10mA , f=100MHz  

V

CB

=-10V, I

E

=0, f=1MHz  

50  

60  

50  

h

FE  

DC current gain  

300  

-0.5  

-0.2  

-1  

V

V

V

CE(sat)  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

V

BE(sat)  

-1  

V

f

T  

100  

MHz  

pF  

Transition frequency  

C

ob  

6

Collector output capacitance  

1

of

3  

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.  

Typical Characteristics  

h

FE

——  

I

C  

Static Characteristic  

-20  

-18  

-16  

-14  

-12  

-10  

-8  

400  

350  

300  

250  

200  

150  

100  

50  

COMMON EMITTER  

COMMON EMITTER  

V

CE

=-5V  

T

a

=25

℃

 

-0.1mA  

-0.09mA  

-0.08mA  

T

a

=100  

℃

-0.07mA  

-0.06mA  

-0.05mA  

-0.04mA  

T

a

=25  

℃

-6  

-0.03mA  

-0.02mA  

-4  

-2  

I

B

=-0.01mA  

-0  

0

-0  

-1  

-2  

-3  

-4  

-5  

-6  

-7  

-8  

-1  

-10  

COLLECTOR CURRENT

 

I

C

(mA)  

-100  

-200  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

V

CEsat

——  

V

BEsat

——  

I

C  

I

C  

-1000  

-800  

-600  

-400  

-200  

-10  

β

=10  

β

=10  

-1  

T

a

=25  

℃

T

a

=100  

℃

T

a

=100  

℃

-0.1  

T

a

=25  

℃

-0.01  

-200  

-1  

-10  

-100  

-1  

-10  

-100  

-200  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR CURRENT

 

I

C

(mA)  

V

BE  

I

C

——  

f

T

——  

I

C  

1000  

100  

10  

-200  

-100  

COMMON EMITTER  

V

CE

=-5V  

COMMON EMITTER  

V

CE

= -10V  

T

a

=25  

℃

-10  

T

a

=100

℃  

T

a

=25  

℃

-1  

-0.1  

-200  

1

-1  

-70  

-400  

-600  

-800  

-1000  

-1200  

-10  

BASE-EMMITER VOLTAGE

 

V

BE

(mV)  

COLLECTOR CURRENT

 

I

C

(mA)  

V

CB

/ V

EB  

C

ob

/ C

ib

——  

P

C

—— T

a  

100  

300  

250  

200  

150  

f=1MHz  

I

E

=0/I

C

=0  

T

a

=25

℃  

C

ib  

10  

C

ob  

100  

1

-0.1  

0

-35  

-1  

-10  

0

25  

50  

75  

100  

125  

150  

REVERSE VOLTAGE  

V

(V)  

AMBIENT TEMPERATURE

 

T

a  

(

℃

)  

2

of

3  

a

Copyright

©

All right reserved

：

Heyuan China Base Electronics Technology Co., Ltd.  

SOT-363-Package Outline Dimensions  

3

of

3  

Copyright

©

All right reserved

:

 

Heyuan China Base Electronics Technology Co., Ltd.