CBI-S8550

S8550T  

TRANSISTOR  

(PNP)  

SOT-523  

FEATURES  

Complimentary to S8050T  

Collector current: I

C

=0.5A  

1. BASE  

2. EMITTER  

3. COLLECTOR  

MARKING :  

2TY  

MAXIMUM RATINGS (T

A

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

Parameter  

Value  

-40  

Units  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

CEO  

V

EBO  

I

C  

-25  

V

-5  

V

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

-0.5  

A

P

C  

0.2  

W

℃

℃

T

j  

150  

T

stg  

Storage

T

e

mperature  

-55-150  

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

Test conditions  

I

C

= -100

µA

I

E

=0  

I

C

=-1mA, I

B

=0  

I

E

= -100

µA

I

C

=0  

MIN  

-40  

-25  

-5  

MAX UNIT  

Parameter  

V

V

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

,

,

V

CB

= -40

V

,

 

I

E

=0  

-0.1  

-0.1  

-0.1  

400  

µA  

µA  

µA  

I

CEO  

V

CE

= -20

V

,

 

I

B

=0  

Collector cut-off current  

I

EBO  

V

EB

= -3

V

,

 

I

C

=0  

Emitter cut-off current  

h

FE(1)  

V

CE

= -1

V

,

 

I

C

= -50mA  

V

CE

= -1

V

,

 

I

C

= -500mA  

I

C

=-500mA, I

B

= -50mA  

120  

50  

DC current gain  

h

FE(2)  

V

CE

(sat)  

V

BE

(sat)  

-0.6  

-1.2  

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

I

C

=-500mA, I

B

= -50mA  

V

CE

= -6

V

,

 

I

C

= -20mA  

f=

30MHz  

150  

MHz  

Transition frequency  

f

T  

CLASSIFICATION OF h

FE  

(1)  

Rank  

L

H

J

120-200  

200-350  

300-400  

Range  

Page 1 of 3  

4/22/2019  

Typical Characteristics  

S8550T  

Page 2 of 3  

4/22/2019  

Page 3 of 3  

4/22/2019