CBI-S9015

S9015  

TRANSISTOR (PNP)  

FEATURES  

Complementary to S9014  

SOT-23  

1

．

BASE  

2

．

EMITTER  

3

．

COLLECTOR  

MARKING: M6  

MAXIMUM RATINGS (T

A

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Value  

-50  

Units  

V

V

CBO  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

CEO  

V

EBO  

I

C  

-45  

V

-5  

V

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

-0.1  

0.2  

A

P

C  

W

℃

℃

T

j  

150  

T

stg  

Storage Temperature  

-55-150  

ELECTRICAL CHARACTERISTICS (Tamb=25

℃

unless otherwise specified)  

Parameter  

Symbol  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

Test conditions  

I

C

= -100

µA

I

E

=0  

I

C

= -0.1mA,

 

I

B

=0  

I

E

=-100

µA

I

C

=0  

MIN  

-50  

-45  

-5  

TYP  

MAX  

UNIT  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

,

V

V

,

I

CB  

V

CB

=-50

V

,

I

E

=0  

-0.1  

-0.1  

450  

-0.3  

-1  

µA  

µA  

O

I

EBO  

h

FE  

V

EB

= -5

V

,

 

I

C

=0  

Emitter cut-off current  

V

CE

=-5

V

,

I

C

= -1mA  

I

C

=-100mA, I

B

= -10mA  

I

C

=-100mA, I

B

=-10mA  

200  

150  

DC current gain  

V

CE

(sat)  

V

BE

(sat)  

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

CE

=-5

V

,

I

C

= -10mA  

f=

30MHz  

f

T  

MHz  

Transition frequency  

Page 1 of 3  

5/30/2011  

Typical Characteristics  

S9015  

Page 2 of 3  

5/30/2011  

PACKAGE OUTLINE  

Plastic surface mounted package; 3 leads  

SOT-23  

Page 3 of 3  

5/30/2011