CBI-SS8050

SOT-89Plastic-Encapsulate Transistors  

SS8050

TRANSISTOR (NPN)  

FEATURES  



Compliment to SS8550  

MARKING: Y1  

MAXIMUM RATINGS (T

a

=25

℃

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Parameter  

Value  

40  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

25  

V

5

V

Collector Current -Continuous  

Collector Power dissipation  

1.5  

0.5  

A

P

C  

W

Thermal Resistance From  

Junction To Ambient  

R

ΘJA  

℃

/W  

250  

Storage Temperature  

Storage Temperature  

150  

T

J  

℃

℃

T

stg  

-55~150  

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test conditions  

Min  

40  

25  

5

Typ  

Max  

Unit  

V

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

(BR)CBO

I

C

=100uA, I

E

=0  

V

(BR)CEO

I

C

=0.1mA, I

B

=0  

V

V

(BR)EBO  

I

CBO  

I

E

=100μA, I

C

=0  

V

V

CB

=40V, I

E

=0  

0.1  

0.1  

0.1  

400  

μA  

μA  

μA  

I

CEO  

V

CE

=20V, I

E

=0  

Emitter cut-off current  

Emitter cut-off current  

I

EBO  

V

EB

=5V, I

C

=0  

h

FE(1)  

h

FE(2)  

V

CE(sat)  

V

BE(sat)  

V

BE  

V

CE

=1V, I

C

=100mA  

V

CE

=1V, I

C

=800mA  

I

C

=800mA, I

B

=80mA  

I

C

=800mA, I

B

=80mA  

V

CE

=1V, I

C

=10mA  

I

B

=1A  

120  

40  

DC current gain  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

Base-emitter voltage  

0.5  

1.2  

1

V

V

V

V

BEF  

f

T  

1.55  

V

Base-emitter positive favor voltage  

Transition frequency  

V

CE

=10V,I

C

=50mA,f=30MHz  

V

CB

=10V,I

E

=0,f=1MHz  

100  

MHz  

pF  

C

ob  

15  

output capacitance  

CLASSIFICATION OF h

FE(1)  

Rank  

C

D

D1  

200-350  

D2  

Range  

120-200  

160-300  

300-400  

1

I

C  

h

FE

——  

Static Characteristic  

0.30  

0.25  

0.20  

0.15  

0.10  

0.05  

0.00  

1000  

COMMON  

EMITTER  

1mA  

T =25

℃  

T =100

℃  

a

a

0.9mA  

0.8mA  

0.7mA  

300  

100  

T =25

℃  

a

0.6mA  

0.5mA  

0.4mA  

0.3mA  

0.2mA  

I =0.1mA  

COMMON EMITTER  

V

C

=

E

1V  

B

10  

0

1

0

2

1

2

3

4

5

6

7

1

10  

100  

1000 1500  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

COLLECTOR CURRENT I (mA)  

C

V

——  

V

——  

I

I

C  

BEsat  

CEsat  

C

1000  

100  

10  

1200  

1000  

800  

600  

T =25

℃  

a

T =100

℃  

a

T =25

℃  

a

T =100

℃  

a

400  

β=10  

1000 1500  

β=10  

1

10  

100  

1

10  

100  

1000 1500  

COLLECTOR CURREMT I (mA)  

COLLECTOR CURREMT I (mA)  

C

C

C /C  

——  

I

——  

V

C

B

/

V

EB  

V

BE  

ob ib  

C

100  

1500  

1000  

f=1MHz  

I =0/I =0  

E

C

C

ib  

T =25

℃  

a

100  

C

ob  

10  

10  

COMMON EMITTER  

V = 1V  

CE  

1

0.1  

1

1

10  

20  

300  

600  

900  

1200  

BESE-EMMITER VOLTAGE V (mV)  

REVERSE VOLTAGE  

V

(V)  

BE  

I

C  

P

C

—— T  

f

T

——  

a

1000  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

100  

10  

1

COMMON EMITTER  

V =10V  

CE  

T =25

℃  

a

10  

100  

0

25  

50  

75  

100  

125  

150  

AMBIENT TEMPERATURE T (

℃

)  

COLLECTOR CURRENT  

I

(mA)  

a

C

2

SS8050  

SOT-89 PACKAGE OUTLINE  

3