CBI-SS8050W
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SS8050
W
TRANSISTOR
(NPN)
SOT
–
323
FEATURES
Complimentary to SS8550W
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: Y1
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
40
Units
V
V
CBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
EBO
I
C
25
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
1.5
A
P
C
0.2
W
℃
℃
T
j
150
-55-150
T
stg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Test conditions
I
C
= 100
μ
I
E
=0
I
C
= 0.1mA,
I
B
=0
I
E
=100
μ
I
C
=0
MIN
40
25
5
TYP
MAX
UNIT
A
,
V
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
A
,
I
CB
V
CB
=40
V
,
I
E
=0
0.1
0.1
0.1
400
μ
A
μ
A
μ
A
O
I
CE
V
CB
=20
V
,
I
E
=0
Collector cut-off current
O
I
EBO
h
FE(1)
V
EB
= 5V,
I
C
=0
Emitter cut-off current
V
CE
=1
V
,
I
C
= 100mA
V
CE
=1
V
,
I
C
= 800mA
I
C
=800mA, I
B
= 80mA
I
C
=800mA, I
B
= 80mA
120
40
DC current gain
h
FE(2)
V
CE(sat)
V
BE(sat)
0.5
1.2
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
CE
=10
V
,
I
C
= 50mA
f=30MHz
f
T
100
MHz
Transition frequency
CLASSIFICATION OF
h
FE(1)
RANK
L
H
J
RANGE
120
–
200
200
–
350
300
–
400
Page 1 of 3
5/30/2011
Typical Characteristics
SS8050W
Page 2 of 3
5/30/2011
SO
T
-323 Package Outline Dimensions
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
Max.
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
Min.
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
Max.
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A
A1
A2
b
c
D
E
E1
e
0.650 TYP.
0.525 REF.
0.026 T
Y
P
.
0.021 REF.
e1
L
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
Page 3 of 3
5/30/2011
