CBI-SS8550
| Part # | CBI-SS8550 |
Download  | CBI-SS8550 |
SS8550
TRANSISTOR
（
PNP
）
FEATURES
SOT-23
Complimentary to SS8050
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
MARKING: Y2
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
-40
Units
V
V
CBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
EBO
I
C
-25
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-1.5
0.3
A
P
C
W
℃
℃
T
j
150
T
stg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
=-100
µA
I
E
=0
I
C
=-0.1mA, I
B
=0
I
E
=-100
µA
I
C
=0
MIN
-40
-25
-5
MAX UNIT
,
V
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
,
V
CB
=-40
V
,
I
E
=0
-0.1
-0.1
-0.1
350
µA
µA
µA
I
CEO
V
CE
=-20
V
,
I
B
=0
Collector cut-off current
I
EBO
V
EB
=-5
V
,
I
C
=0
Emitter cut-off current
h
FE(1)
V
CE
=-1
V
,
I
C
=-100mA
V
CE
=-1
V
,
I
C
=-800mA
I
C
=-800mA, I
B
=-80mA
I
C
=-800mA, I
B
=-80mA
I
C
=-1
V
,
V
CE
=-10mA
200
40
DC current gain
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE(on)
V
BEF
-0.5
-1.2
-1
V
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
I
B
=-1A
-1.55
Base-emitter positive favor voltage
V
CE
= -10
V
,
I
C
= -50mA
f=30MHz
f
T
100
MHz
pF
Transition frequency
output capacitance
C
ob
(V
CB
=-10
V
,
I
E
=0,f=1MHz)
20
Page 1 of 3
5/30/2011
Typical Characteristics
SS8550
Page 2 of 3
5/30/2011
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
Page 3 of 3
5/30/2011
