Central-Semicon-2N5306-TIN-LEAD

2N5306  

2N5308  

SILICON  

DESCRIPTION:  

NPN DARLINGTON TRANSISTORS  

The CENTRAL SEMICONDUCTOR 2N5306 and  

2N5308 are silicon NPN epitaxial planar Darlington  

transistors designed for high gain amplifier applications.  

MARKING: FULL PART NUMBER  

TO-92 CASE  

MAXIMUM RATINGS:

(T =25°C)  

SYMBOL  

2N5306  

25  

25  

2N5308  

40  

40  

UNITS  

V

V

V

mA  

mA  

mA  

mW  

W

°C  

°C/W  

°C/W  

A

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Continuous Collector Current  

Peak Collector Current  

Continuous Base Current  

Power Dissipation  

V

V

V

CBO  

CEO  

EBO  

12  

I

300  

500  

100  

625  

1.5  

C

I

CM  

I

B

P

P

D

D

Power Dissipation (T

 

=25°C)  

C

Operating and Storage Junction Temperature  

Thermal Resistance  

T ,

 

T  

-65 to +150  

200  

J

stg  





JA  

JC  

Thermal Resistance  

83.3  

ELECTRICAL CHARACTERISTICS:

(T =25°C

 

unless otherwise noted)  

A

SYMBOL  

TEST CONDITIONS  

MIN  

TYP  

MAX  

UNITS  

I

I

I

V

V

V

=Rated V  

=Rated V  

=12V  

100  

20  

100  

nA  

CBO  

CBO  

EBO  

CBO  

CBO  

CEO  

CEO  

EBO  

CE(SAT)  

BE(SAT)  

BE(ON)  

FE  

FE  

fe  

CB  

CB  

EB  

CBO  

CBO  

, T

 

=100°C  

μA  

nA  

V

V

V

V

V

V

V

A

BV  

BV  

BV  

BV  

BV  

V

V

V

h

h

h

|

h

|  

h

I =10μA

 

(2N5306)  

25  

40  

25  

40  

12  

C

I =10μA

 

(2N5308)  

C

I =10mA

 

(2N5306)  

C

I =10mA

 

(2N5308)  

C

I =10μA  

E

I =200mA,

 

I =200μA  

1.4  

1.6  

1.5  

C

B

B

I =200mA,

 

I =200μA  

C

V

=5.0V, I

 

=200mA  

V

CE  

CE  

CE  

CE  

CE  

CE  

CE  

CB  

EB  

C

V

V

V

V

V

V

V

V

=5.0V, I

 

=2.0mA  

7.0K  

20K  

7.0K  

15.6  

70K  

C

=5.0V, I

 

=100mA  

C

=5.0V, I

 

=2.0mA, f=1.0kHz  

C

=5.0V, I

 

=2.0mA, f=10MHz  

dB  

kW  

MHz  

pF  

fe  

ie  

C

=5.0V, I

 

=2.0mA, f=1.0kHz  

650  

12  

C

f

C

C

=5.0V, I

 

=2.0mA, f=10MHz  

C

60  

T

=10V, f=1.0MHz  

=0.5V, f=1.0MHz  

10  

cb  

eb  

pF  

R2 (13-January 2016)  

2N5306  

2N5308  

SILICON  

NPN DARLINGTON TRANSISTORS  

TO-92 CASE – MECHANICAL OUTLINE  

LEAD CODE:  

1) Emitter  

2) Collector  

3) Base  

MARKING:  

FULL PART NUMBER  

R2 (13-January 2016)  

OUTSTANDING SUPPORT AND SUPERIOR SERVICES  

PRODUCT SUPPORT  

Central’s operations team provides the highest level of support to insure product is delivered on-time.  

• Supply management (Customer portals)  

• Inventory bonding  

• Custom bar coding for shipments  

• Custom product packing  

• Consolidated shipping options  

DESIGNER SUPPORT/SERVICES  

Central’s applications engineering team is ready to discuss your design challenges. Just ask.  

• Free quick ship samples (2

nd

day air)  

• Online technical data and parametric search  

• SPICE models  

• Special wafer diffusions  

• PbSn plating options  

• Package details  

• Custom electrical curves  

• Application notes  

• Environmental regulation compliance  

• Customer specific screening  

• Up-screening capabilities  

• Application and design sample kits  

• Custom product and package development  

REQUESTING PRODUCT PLATING  

1. If

 

requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when  

ordering (example: 2N2222A TIN/LEAD).  

2. If

 

requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number  

when ordering (example: 2N2222A PBFREE).  

CONTACT US  

Corporate Headquarters & Customer Support Team  

Central Semiconductor Corp.  

145 Adams Avenue  

Worldwide Field Representatives:  

Hauppauge, NY 11788 USA  

Main Tel: (631) 435-1110  

Main Fax: (631) 435-1824  

Support Team Fax: (631) 435-3388  

Worldwide Distributors:  

For the latest version of Central Semiconductor’s

LIMITATIONS AND DAMAGES DISCLAIMER

,  

(001)