Central-Semicon-2N6433-PBFREE
| Part # | Central-Semicon-2N6433-PBFREE |
Download  | Central-Semicon-2N6433-PBFREE |
2N6430 2N6431
NPN
2N6432 2N6433
PNP
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6430 series
devices are complementary small signal silicon
transistors manufactured by the epitaxial planar
process, designed for high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(T =25°C
unless otherwise noted)
2N6430
2N6432
200
2N6431
2N6433
300
A
SYMBOL
UNITS
V
Collector-Base Voltage
V
CBO
CEO
EBO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage (NPN)
Emitter-Base Voltage (PNP)
Continuous Collector Current
V
V
V
200
300
V
V
6.0
5.0
500
1.8
500
V
I
mA
W
C
Power Dissipation (T
=25°C)
C
P
D
D
Power Dissipation
P
mW
°C
Operating and Storage Junction Temperature
Thermal Resistance
T ,
T
-65 to +200
0.35
J
stg
Θ
°C/mW
°C/W
JA
JC
2N6430
2N6431
Thermal Resistance
Θ
97.2
2N6432
2N6433
ELECTRICAL CHARACTERISTICS:
(T =25°C)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
I
I
I
I
V
V
V
V
=160V (2N6430, 2N6432)
=200V (2N6431, 2N6433)
=4.0V
–
100
–
250
nA
CBO
CBO
EBO
EBO
CB
CB
EB
EB
–
–
100
–
250
nA
nA
nA
V
100
–
–
=3.0V
–
–
–
100
BV
BV
BV
BV
BV
I =100μA
(2N6430, 2N6432)
200
300
200
300
6.0
–
–
200
300
200
300
5.0
–
–
CBO
CBO
CEO
CEO
EBO
C
I =100μA
(2N6431, 2N6433)
–
–
V
C
I =1.0mA
(2N6430, 2N6432)
–
–
–
–
V
C
I =1.0mA
(2N6431, 2N6433)
V
C
I =100μA
–
–
V
E
V
V
I =20mA,
I =2.0mA
0.5
0.9
–
0.5
0.9
–
V
CE(SAT)
BE(SAT)
FE
C
B
I =20mA,
I =2.0mA
–
–
V
C
B
h
h
h
V
=10V, I
=1.0mA
25
40
50
25
40
30
CE
CE
CE
C
V
V
=10V, I
=10mA
–
–
FE
C
=10V, I
=30mA
200
150
FE
C
R2 (3-April 2018)
2N6430 2N6431
NPN
2N6432 2N6433
PNP
COMPLEMENTARY
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS – Continued:
(T =25°C)
A
2N6430
2N6431
2N6432
2N6433
SYMBOL
TEST CONDITIONS
MIN
50
MAX
200
MIN
MAX
–
UNITS
MHz
f
V
V
V
=20V, I
=10mA, f=100MHz
–
50
–
T
CE
CE
CB
C
f
=20V, I
=10mA, f=20MHz
–
–
–
MHz
pF
T
C
C
=20V, I
=0, f=1.0MHz
–
4.0
6.0
ob
E
TO-18 CASE – MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R2 (3-April 2018)
2N6430 2N6431
NPN
2N6432 2N6433
PNP
COMPLEMENTARY
SILICON TRANSISTORS
NPN TYPICAL ELECTRICAL CHARACTERISTICS
R2 (3-April 2018)
2N6430 2N6431
NPN
2N6432 2N6433
PNP
COMPLEMENTARY
SILICON TRANSISTORS
PNP TYPICAL ELECTRICAL CHARACTERISTICS
R2 (3-April 2018)
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nd
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REQUESTING PRODUCT PLATING
1. If
requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If
requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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