Central-Semicon-2N7002-BK-PBFREE

Part #Central-Semicon-2N7002-BK-PBFREE
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Central-Semicon-2N7002-BK-PBFREE
2N7002  
SURFACE MOUNT SILICON  
N-CHANNEL  
ENHANCEMENT-MODE  
MOSFET  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR 2N7002 type is an  
N-Channel enhancement-mode MOSFET manufactured  
by the N-Channel DMOS Process, designed for high  
speed pulsed amplifier and driver applications.  
MARKING CODE: 702  
SOT-23 CASE  
MAXIMUM RATINGS:
(T =25°C)  
SYMBOL  
UNITS  
V
A
Drain-Source Voltage  
Drain-Gate Voltage  
Gate-Source Voltage  
V
60  
60  
DS  
DG  
GS  
V
V
V
40  
V
Continuous Drain Current (T
 
=25°C)  
I
115  
mA  
mA  
mA  
mA  
mA  
mW  
°C  
C
D
D
Continuous Drain Current (T
 
=100°C)  
I
75  
C
Continuous Source Current (Body Diode)  
Maximum Pulsed Drain Current  
Maximum Pulsed Source Current  
Power Dissipation  
I
115  
S
I
800  
DM  
I
800  
SM  
P
350  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T ,
 
T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS:
(T =25°C
 
unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
nA  
nA  
μA  
μA  
mA  
V
I
I
I
I
I
V
V
V
V
V
=20V  
=20V  
100  
100  
1.0  
GSSF  
GSSR  
DSS  
GS  
GS  
DS  
DS  
DS  
=60V, V
 
=0  
GS  
=60V, V
 
=0, T
 
=125°C  
GS  
500  
DSS  
A
=10V, V
 
=10V  
500  
60  
D(ON)  
GS  
BV  
I =10μA  
105  
2.1  
DSS  
GS(th)  
DS(ON)  
DS(ON)  
SD  
D
V
V
V
V
V
V
V
V
V
V
V
V
V
=V ,
 
I =250μA  
DS GS  
1.0  
2.5  
3.75  
0.375  
1.5  
V
D
=10V, I
 
=500mA  
V
GS  
GS  
GS  
GS  
GS  
GS  
GS  
DS  
D
=5.0V, I
 
=50mA  
V
D
=0, I
 
=11.5mA  
V
S
r
r
r
r
=10V, I
 
=500mA  
3.7  
6.2  
7.5  
Ω
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
D
=10V, I
 
=500mA, T
 
=100°C  
13.5  
7.5  
Ω
D
A
=5.0V, I
 
=50mA  
Ω
D
=5.0V, I
 
=50mA, T
 
=100°C  
13.5  
Ω
D
A
g
=10V, I
 
=200mA  
80  
mS  
FS  
D
R6 (9-February 2015)  

2N7002  
SURFACE MOUNT SILICON  
N-CHANNEL  
ENHANCEMENT-MODE  
MOSFET  
ELECTRICAL CHARACTERISTICS – Continued:
(T =25°C
 
unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
UNITS  
C
C
C
V
V
V
V
V
V
V
V
=25V, V
 
=0, f=1.0MHz  
5.0  
pF  
rss  
iss  
DS  
DS  
DS  
DS  
DS  
DS  
DD  
DD  
GS  
=25V, V
 
=0, f=1.0MHz  
GS  
50  
25  
pF  
pF  
nC  
nC  
nC  
ns  
=25V, V
 
=0, f=1.0MHz  
oss  
GS  
Q
Q
Q
=30V, V
 
=4.5V, I
 
=100mA  
GS  
0.592  
0.196  
0.148  
g(tot)  
gs  
D
=30V, V
 
=4.5V, I
 
=100mA  
GS  
D
=30V, V
 
=4.5V, I
 
=100mA  
gd  
GS  
D
t
t
=30V, I
 
=200mA, R
 
=25Ω, R
 
=150Ω  
20  
20  
on  
off  
D
G
L
=30V, I
 
=200mA, R
 
=25Ω, R
 
=150Ω  
ns  
D
G
L
SOT-23 CASE – MECHANICAL OUTLINE  
2
1
3
LEAD CODE:  
1) Gate  
2) Source  
3) Drain  
MARKING CODE: 702  
R6 (9-February 2015)  

2N7002  
SURFACE MOUNT SILICON  
N-CHANNEL  
ENHANCEMENT-MODE  
MOSFET  
TYPICAL ELECTRICAL CHARACTERISTICS  
R6 (9-February 2015)  

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