Central-Semicon-CEDM7002AE-TR-PBFREE
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CEDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
DESCRIPTION:
ENHANCEMENT-MODE
MOSFET
The CENTRAL SEMICONDUCTOR CEDM7002AE
is a special ESD protected version of the 2N7002
enhancement-mode N-Channel MOSFET designed for
high speed pulsed amplifier and driver applications.
MARKING CODE: 7
SOT-883L CASE
APPLICATIONS:
FEATURES:
Load/Power switches
DC-DC converter circuits
Power management
♦
ESD protection up to 1800V
•
Low gate charge
•
•
•
•
•
Low r
DS(ON)
MAXIMUM RATINGS:
(T =25°C)
Drain-Source Voltage
SYMBOL
UNITS
V
A
V
60
60
DS
DG
GS
Drain-Gate Voltage
V
V
V
V
Gate-Source Voltage
20
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation
I
300
mA
mA
mW
°C
D
I
800
DM
P
100
D
Operating and Storage Junction Temperature
Thermal Resistance
T ,
T
-65 to +150
1250
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS:
(T =25°C
unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
, I
V
V
V
V
V
V
V
V
V
V
V
V
V
=20V, V
=0
10
µA
GSSF GSSR
GS
DS
DS
GS
DS
♦
♦
=60V, V
=0
GS
100
500
nA
µA
V
DSS
DSS
=60V, V
=0, T
=125°C
GS
J
BV
=0, I
=10µA
60
1.2
0.5
70
DSS
GS(th)
SD
D
V
V
=V ,
I =250µA
1.5
2.0
1.1
1.6
2.0
6.0
V
DS GS
D
=0, I
=115mA (Note 1)
V
GS
GS
GS
GS
DS
DS
DS
DS
S
♦
r
r
r
=10V, I
=500mA (Note 1)
1.1
1.15
3.0
Ω
DS(ON)
DS(ON)
DS(ON)
D
=5.0V, I
=100mA (Note 1)
Ω
D
=2.5V, I
=10mA (Note 1)
Ω
D
g
=10V, I
=200mA
220
mS
pF
pF
pF
FS
D
C
C
C
=25V, V
=0, f=1.0MHz
5.0
50
25
rss
iss
GS
=25V, V
=0, f=1.0MHz
GS
=25V, V
=0, f=1.0MHz
oss
GS
♦
Enhanced specification
Notes: (1) tp=380μs
R3 (21-January 2022)
CEDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL CHARACTERISTICS – Continued:
(T =25°C
unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
TYP
MAX
UNITS
Q
Q
Q
V
V
V
V
=10V, V
=4.5V, I
=200mA
0.5
nC
g(tot)
gs
DS
DS
DS
DD
GS
D
=10V, V
=4.5V, I
=200mA
0.2
nC
nC
ns
GS
D
=10V, V
=4.5V, I
=200mA
0.14
gd
GS
D
t
t
=30V, V
=10V, I
=200mA
20
45
on
off
GS
D
R =25Ω,
R =150Ω
ns
G
L
SOT-883L CASE – MECHANICAL OUTLINE
PIN CONFIGURATION
(Bottom View)
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 7
R3 (21-January 2022)
CEDM7002AE
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R3 (21-January 2022)
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nd
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requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
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2. If
requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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