Central-Semicon-CMLDM7003-TR
| Part # | Central-Semicon-CMLDM7003-TR |
| Download | Central-Semicon-CMLDM7003-TR |
CMLDM7003
CMLDM7003G*
CMLDM7003J
SURFACE MOUNT SILICON
DUAL N-CHANNEL
ENHANCEMENT-MODE
MOSFETS
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are dual N-Channel enhancement-mode MOSFETs,
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. The CMLDM7003 utilizes the USA pinout
configuration, while the CMLDM7003J utilizes the
Japanese pinout configuration. These devices offer low
r
and ESD protection up to 2kV.
DS(ON)
MARKING CODES: CMLDM7003:
C30
CMLDM7003G*: C3G
CMLDM7003J: C3J
SOT-563 CASE
Device is
Halogen Free
by design
*
MAXIMUM RATINGS:
(T =25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
UNITS
V
V
V
mA
A
mW
mW
mW
°C
A
V
V
V
50
50
12
280
1.5
350
300
150
DS
DG
GS
I
D
I
DM
P
P
P
D
D
D
T ,
T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(T =25°C
unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V
=10V
=12V
100
nA
GSSF, GSSR
GS
GS
GS
DS
GS
2.0
2.0
50
μA
μA
nA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
nC
nC
nC
GSSF, GSSR
GSSF, GSSR
=50V, V
=0
DSS
GS
BV
V
V
r
r
r
=0, I
=10μA
50
0.49
DSS
GS(th)
SD
DS(ON)
DS(ON)
DS(ON)
D
=V ,
I =250μA
1.0
1.4
3.0
2.5
2.0
DS GS
D
=0, I
=115mA
=1.8V, I
=50mA
=2.5V, I
=50mA
=5.0V, I
=50mA
=10V, I
=200mA
=25V, V
=0, f=1.0MHz
=25V, V
=0, f=1.0MHz
GS
=25V, V
=0, f=1.0MHz
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
S
1.6
1.3
1.1
D
D
D
D
g
200
FS
rss
iss
oss
g(tot)
gs
C
C
C
Q
Q
Q
5.0
60
25
GS
GS
GS
GS
=25V, V
=4.5V, I
=100mA
=25V, V
=4.5V, I
=100mA
=25V, V
=4.5V, I
=100mA
GS
0.764
0.148
0.156
D
D
D
gd
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
R10 (28-September 2021)
CMLDM7003
CMLDM7003G*
CMLDM7003J
SURFACE MOUNT SILICON
DUAL N-CHANNEL
ENHANCEMENT-MODE
MOSFETS
SOT-563 CASE – MECHANICAL OUTLINE
PIN CONFIGURATIONS
CMLDM7003J
(Japanese Pinout)
CMLDM7003
(USA Pinout)
CMLDM7003G*
LEAD CODE:
1) Gate Q1
2) Source Q1
3) Drain Q2
4) Gate Q2
5) Source Q2
6) Drain Q1
LEAD CODE:
1) Source Q1
2) Gate Q1
3) Drain Q2
4) Source Q2
5) Gate Q2
6) Drain Q1
MARKING CODES:
CMLDM7003: C30
CMLDM7003G*: C3G
MARKING CODE: C3J
Device is
Halogen Free
by design
*
R10 (28-September 2021)
CMLDM7003
CMLDM7003G*
CMLDM7003J
SURFACE MOUNT SILICON
DUAL N-CHANNEL
ENHANCEMENT-MODE
MOSFETS
TYPICAL ELECTRICAL CHARACTERISTICS
R10 (28-September 2021)
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nd
day air)
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REQUESTING PRODUCT PLATING
1. If
requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If
requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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