Central-Semicon-CMLDM7003-TR

Part #Central-Semicon-CMLDM7003-TR
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Central-Semicon-CMLDM7003-TR
CMLDM7003  
CMLDM7003G*  
CMLDM7003J  
SURFACE MOUNT SILICON  
DUAL N-CHANNEL  
ENHANCEMENT-MODE  
MOSFETS  
DESCRIPTION:  
These CENTRAL SEMICONDUCTOR devices  
are dual N-Channel enhancement-mode MOSFETs,  
manufactured by the N-Channel DMOS Process,  
designed for high speed pulsed amplifier and driver  
applications. The CMLDM7003 utilizes the USA pinout  
configuration, while the CMLDM7003J utilizes the  
Japanese pinout configuration. These devices offer low  
r
and ESD protection up to 2kV.  
DS(ON)  
MARKING CODES: CMLDM7003:  
C30  
CMLDM7003G*: C3G  
CMLDM7003J: C3J  
SOT-563 CASE  
Device is
Halogen Free
by design  
*
MAXIMUM RATINGS:
(T =25°C)  
Drain-Source Voltage  
Drain-Gate Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Maximum Pulsed Drain Current  
Power Dissipation (Note 1)  
Power Dissipation (Note 2)  
Power Dissipation (Note 3)  
Operating and Storage Junction Temperature  
Thermal Resistance  
SYMBOL  
UNITS  
V
V
V
mA  
A
mW  
mW  
mW  
°C  
A
V
V
V
50  
50  
12  
280  
1.5  
350  
300  
150  
DS  
DG  
GS  
I
D
I
DM  
P
P
P
D
D
D
T ,
 
T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(T =25°C
 
unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=5.0V  
=10V  
=12V  
100  
nA  
GSSF, GSSR  
GS  
GS  
GS  
DS  
GS  
2.0  
2.0  
50  
μA  
μA  
nA  
V
V
V
Ω
Ω
Ω
mS  
pF  
pF  
pF  
nC  
nC  
nC  
GSSF, GSSR  
GSSF, GSSR  
=50V, V
 
=0  
DSS  
GS  
BV  
V
V
r
r
r
=0, I
 
=10μA  
50  
0.49  
DSS  
GS(th)  
SD  
DS(ON)  
DS(ON)  
DS(ON)  
D
=V ,
 
I =250μA  
1.0  
1.4  
3.0  
2.5  
2.0  
DS GS  
D
=0, I
 
=115mA  
=1.8V, I
 
=50mA  
=2.5V, I
 
=50mA  
=5.0V, I
 
=50mA  
=10V, I
 
=200mA  
=25V, V
 
=0, f=1.0MHz  
=25V, V
 
=0, f=1.0MHz  
GS  
=25V, V
 
=0, f=1.0MHz  
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
S
1.6  
1.3  
1.1  
D
D
D
D
g
200  
FS  
rss  
iss  
oss  
g(tot)  
gs  
C
C
C
Q
Q
Q
5.0  
60  
25  
GS  
GS  
GS  
GS  
=25V, V
 
=4.5V, I
 
=100mA  
=25V, V
 
=4.5V, I
 
=100mA  
=25V, V
 
=4.5V, I
 
=100mA  
GS  
0.764  
0.148  
0.156  
D
D
D
gd  
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm

2  

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm

2  

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm

2  

R10 (28-September 2021)  

CMLDM7003  
CMLDM7003G*  
CMLDM7003J  
SURFACE MOUNT SILICON  
DUAL N-CHANNEL  
ENHANCEMENT-MODE  
MOSFETS  
SOT-563 CASE – MECHANICAL OUTLINE  
PIN CONFIGURATIONS  
CMLDM7003J
(Japanese Pinout)  
CMLDM7003
(USA Pinout)  
CMLDM7003G*  
LEAD CODE:  
1) Gate Q1  
2) Source Q1  
3) Drain Q2  
4) Gate Q2  
5) Source Q2  
6) Drain Q1  
LEAD CODE:  
1) Source Q1  
2) Gate Q1  
3) Drain Q2  
4) Source Q2  
5) Gate Q2  
6) Drain Q1  
MARKING CODES:  
CMLDM7003: C30  
CMLDM7003G*: C3G  
MARKING CODE: C3J  
Device is
Halogen Free
by design  
*
R10 (28-September 2021)  

CMLDM7003  
CMLDM7003G*  
CMLDM7003J  
SURFACE MOUNT SILICON  
DUAL N-CHANNEL  
ENHANCEMENT-MODE  
MOSFETS  
TYPICAL ELECTRICAL CHARACTERISTICS  
R10 (28-September 2021)  

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Central’s applications engineering team is ready to discuss your design challenges. Just ask.  
• Free quick ship samples (2

nd

day air)  
• Online technical data and parametric search  
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• Package details  
• Custom electrical curves  
• Application notes  
• Environmental regulation compliance  
• Customer specific screening  
• Up-screening capabilities  
• Application and design sample kits  
• Custom product and package development  
REQUESTING PRODUCT PLATING  
1. If
 
requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when  
ordering (example: 2N2222A TIN/LEAD).  
2. If
 
requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number  
when ordering (example: 2N2222A PBFREE).  
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