CET-Chino-Excel-Tech-CEC3172
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CEC3172
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
PRELIMINARY
D
30V, 26A, R
DS(ON)
= 20m
Ω
@V
GS
= 10V.
R
DS(ON)
= 32m
Ω
@V
GS
= 4.5V.
Super High dense cell design for extremely low R
DS(ON)
High power and current handing capability.
Lead-free plating ; RoHS compliant.
.
G
S
D
D
D
D
6
7
5
8
Bottom View
DFN3*3
3
2
1
4
G S
S S
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 C unless otherwise noted
Parameter
Symbol
V
DS
V
GS
I
D
Limit
Units
Drain-Source Voltage
30
V
V
A
A
A
Gate-Source Voltage
Drain Current-Continuous@R
θ
Jc
@R
θ
JA
±
20
26
I
D
9
Drain Current-Pulsed
a
@R
θ
Jc
I
DM
92
@R
θ
JA
I
DM
36
A
W
C
Maximum Power Dissipation
P
D
2.5
Operating and Store Temperature Range
T
J
,T
stg
-55 to 150
Thermal Characteristics
Parameter
Symbol
R
θ
Jc
Limit
6
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
b
Thermal Resistance, Junction-to-Ambient
b
R
θ
JA
50
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Rev 1.
2013.Feb
1
CEC3172
Electrical Characteristics
T =
25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
BV
DSS
I
DSS
V
GS
= 0
V
,
I
D
= 250
µ
A
V
DS
= 30
V
,
V
GS
= 0V
V
GS
= 20
V
,
V
DS
= 0V
V
GS
= -20
V
,
V
DS
= 0V
30
V
1
µ
A
nA
nA
I
GSSF
I
GSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
V
GS(th)
R
DS(on)
V
GS
= V
DS
, I
D
= 250
µ
A
V
GS
= 10
V
,
I
D
= 6.3A
V
GS
= 4.5
V
,
I
D
=5A
1
3
V
14
24
20
32
m
Ω
m
Ω
On-Resistance
Dynamic Characteristics
c
Input Capacitance
C
iss
C
oss
C
rss
590
125
95
pF
pF
pF
V
DS
= 15
V
,
V
GS
= 0
V
,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
10
4
ns
ns
V
DD
= 15
V
,
I
D
= 7A,
V
GS
= 10
V
,
R
GEN
= 3
Ω
Turn-On Rise Time
Turn-Off Delay Time
25
4
ns
Turn-Off Fall Time
ns
T
o
tal Gate Charge
Q
g
13
2
nC
nC
nC
V
DS
= 15
V
,
I
D
= 7A,
V
GS
= 10V
Gate-Source Charge
Q
gs
Q
gd
Gate-Drain Charge
3.5
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
I
S
1.25
1.2
A
V
V
SD
V
GS
= 0
V
,
I
S
= 2A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CEC3172
25
20
15
10
15
12
9
25 C
V
GS
=10,8,6V
V
GS
=4V
6
V
GS
=3V
3
5
0
T
J
=125 C
-55 C
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
900
750
600
450
300
150
0
I
D
=30A
V
GS
=10V
C
iss
C
oss
C
rss
-100
-50
0
50
100
150
200
0
3
6
9
12
15
V
DS
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance
V
a
riation
with
T
e
mperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
=V
GS
I
D
=250µA
V
GS
=0V
10
2
10
1
10
0
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature( C)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEC3172
10
2
10
1
10
0
10
-1
10
-2
10
8
V
DS
=15V
I
D
=7A
R
DS(ON)
Limit
10ms
100ms
1s
6
DC
4
2
T
A
=25 C
T
J
=150 C
Single Pulse
0
10
-2
10
-1
10
0
10
1
10
2
0
3
6
9
12
15
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
V
DD
on
t
t
off
d(off)
t
r
t
d(on)
OUT
R
L
t
f
t
V
IN
90%
10%
90%
D
OUT
V
V
V
GS
10%
INVERTED
R
GEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
0.1
0.05
0.02
P
DM
t
1
t
2
0.01
10
-2
1. R
θ
JA
(t)=r (t) * R
θ
JA
2. R
θ
JA
=See Datasheet
3. T
JM-
T
A
= P* R
θ
JA
(t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 10. Normalized Thermal Transient Impedance Curve
4
