CET-Chino-Excel-Tech-CED6426
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CED6426/CEU6426
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 16A , R
DS(ON)
= 66m
Ω
@V
GS
= 10V.
R
DS(ON)
= 85m
Ω
@V
GS
= 4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
T =
25 C unless otherwise noted
c
Parameter
Symbol
V
DS
V
GS
I
D
Limit
Units
V
Drain-Source Voltage
60
Gate-Source Voltage
±
20
16
V
Drain Current-Continuous
A
Drain Current-Pulsed
a
I
DM
64
A
Maximum Power Dissipation @ T
C
= 25 C
– Derate above 25 C
32
W
P
D
0.26
-55 to 150
W/ C
C
Operating and Store Temperature Range
T
J
,T
stg
Thermal Characteristics
Parameter
Symbol
R
θ
JC
Limit
3.9
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
θ
JA
50
Rev 2.
2007.April
Details are subject to change without notice .
1
CED6426/CEU6426
Electrical Characteristics
T =
25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BV
DSS
I
DSS
V
GS
= 0
V
,
I
D
= 250
µ
A
V
DS
= 60
V
,
V
GS
= 0V
V
GS
= 20
V
,
V
DS
= 0V
V
GS
= -20
V
,
V
DS
= 0V
60
V
1
µ
A
nA
nA
I
GSSF
I
GSSR
100
-100
6
Gate Threshold Voltage
Static Drain-Source
V
GS(th)
R
DS(on)
V
GS
= V
DS
, I
D
= 250
µ
A
V
GS
= 10
V
,
I
D
= 8A
1
3
V
45
65
66
85
m
Ω
m
Ω
On-Resistance
V
GS
= 4.5
V
,
I
D
= 6.4A
Dynamic Characteristics
c
Forward Transconductance
Input Capacitance
g
FS
C
iss
C
oss
C
rss
V
DS
= 10
V
,
I
D
= 4.5A
10
680
80
S
pF
pF
pF
V
DS
= 25
V
,
V
GS
= 0
V
,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
45
t
d(on)
t
r
t
d(off)
t
f
10
2.9
20
5.8
59.4
5
ns
ns
V
DD
= 30
V
,
I
D
= 1A,
V
GS
= 10
V
,
R
GEN
= 6
Ω
Turn-On Rise Time
Turn-Off Delay Time
29.7
2.5
ns
Turn-Off Fall Time
ns
T
o
tal Gate Charge
Q
g
12.9
1.6
17.1
nC
nC
nC
V
DS
= 30
V
,
I
D
= 4.5A,
V
GS
= 10V
Gate-Source Charge
Q
gs
Q
gd
Gate-Drain Charge
2.5
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
I
S
16
A
V
V
SD
V
GS
= 0
V
,
I
S
= 8A
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CED6426/CEU6426
25
20
15
10
25
25 C
V
GS
=10,8,6,5V
20
15
10
5
V
GS
=4.0
V
5
0
T
J
=125 C
1.0
-55 C
0
0
1
2
3
4
5
0.0
2.0
3.0
4.0
5.0
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1200
1000
800
600
400
200
0
2.2
1.9
1.6
1.3
1.0
0.7
0.4
I
D
=8A
V
GS
=10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance
V
a
riation
with
T
e
mperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
=V
GS
I
D
=250µA
V
GS
=0V
10
1
10
0
10
-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CED6426/CEU6426
10
2
10
8
V
DS
=30V
I
D
=4.5A
R
DS(ON)
Limit
1ms
10
1
10ms
100ms
DC
6
4
10
0
6
2
T
C
=25 C
T
J
=175 C
Single Pulse
10
-1
0
10
-1
10
0
10
1
10
2
0
3
6
9
12
15
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
V
DD
on
t
t
off
d(off)
t
r
t
d(on)
OUT
R
L
t
f
t
V
IN
90%
10%
90%
D
OUT
V
V
V
GS
10%
INVERTED
R
GEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
10
0
10
-1
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
