CET-Chino-Excel-Tech-CEM3133
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CEM3133
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -9.3A, R
DS(ON)
= 18m
Ω
@V
GS
= -10V.
R
DS(ON)
= 26m
Ω
@V
GS
= -4.5V.
Super high dense cell design for extremely low R
DS(ON)
High power and current handing capability.
RoHS compliant.
.
D
8
D
D
6
D
5
7
Surface mount Package.
SO-8
1
2
3
4
1
S
S
S
G
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 C unless otherwise noted
Parameter
Symbol
V
DS
V
GS
I
D
Rating
Units
Drain-Source Voltage
-30
V
Gate-Source Voltage
±
25
-9.3
V
A
A
Drain Current-Continuous@T
A
= 25 C
Drain Current-Pulsed
a
I
DM
-37.2
Maximum Power Dissipation
P
D
2.5
W
C
Operating and Store Temperature Range
T
J
,T
stg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient
b
R
θ
JA
50
C/W
Rev 2.
2017.Dec
Details are subject to change without notice .
CEM3133
Electrical Characteristics
T
A
= 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Reverse
Gate Body Leakage Current, Forward
On Characteristics
c
BV
DSS
I
DSS
V
GS
= 0
V
,
I
D
= -250
µ
A
V
DS
= -30
V
,
V
GS
= 0V
V
GS
= -20
V
,
V
DS
= 0V
V
GS
= 20
V
,
V
DS
= 0V
-30
V
-1
µ
A
nA
nA
I
GSSR
I
GSSF
-100
100
5
Gate Threshold Voltage
Static Drain-Source
V
GS(th)
R
DS(on)
V
GS
= V
DS
, I
D
= -250
µ
A -0.8
V
GS
= -10
V
,
I
D
= -4A
-2
18
26
V
14
21
m
Ω
m
Ω
On-Resistance
Dynamic Characteristics
d
V
GS
= -4.5
V
,
I
D
= -2A
Input Capacitance
C
iss
C
oss
C
rss
1710
260
pF
pF
pF
V
DS
= -15
V
,
V
GS
= 0
V
,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
185
t
d(on)
t
r
t
d(off)
t
f
16
8
ns
ns
V
DD
= -24
V
,
I
D
= -1A,
V
GS
= -10
V
,
R
GEN
= 6
Ω
Turn-On Rise Time
Turn-Off Delay Time
75
36
18
3.4
7.1
ns
Turn-Off Fall Time
ns
T
o
tal Gate Charge
Q
g
nC
nC
nC
V
DS
= -24
V
,
I
D
= -1A,
V
GS
= -4.5V
Gate-Source Charge
Q
gs
Q
gd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
I
S
-2
A
V
V
SD
V
GS
= 0
V
,
I
S
= -2A
-1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
CEM3133
14.0
11.2
8.4
30
24
18
12
6
-V
GS
=10,8,7,6,5,4V
-V
GS
=3V
25 C
5.6
2.8
0
T
J
=125 C
1
-55 C
0
0.0
0.4
0.8
1.2
1.6
2.0
0
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
2400
2000
1600
1200
800
400
0
I
D
=-4A
V
GS
=-10V
C
iss
C
oss
C
rss
0
3
6
9
12
15
-100
-50
0
50
100
150
200
-V
DS
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance
V
a
riation
with
T
e
mperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
=V
GS
V
GS
=0V
I
D
=-250µA
10
1
10
0
10
-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
-V
SD
, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
CEM3133
10
2
10
1
10
0
10
-1
10
-2
5
4
V
DS
=-24V
I
D
=-1A
R
DS(ON)
Limit
10ms
100ms
1s
DC
3
2
1
T
A
=25 C
T
J
=150 C
Single Pulse
0
10
-2
10
-1
10
0
10
1
10
2
0
3
6
9
12
15
18
Qg, Total Gate Charge (nC)
-V
DS
, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
1.3
1.2
1.1
1
0.9
0.8
-50
0
50
100
150
Tj, Junction Temperature ( C)
Figure 9. Breakdown Voltage Variation
VS Temperature
V
DD
on
t
t
off
d(off)
t
r
t
d(on)
OUT
R
L
t
f
t
V
IN
90%
10%
90%
D
OUT
V
V
V
GS
10%
INVERTED
R
GEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 11. Switching Waveforms
Figure 10. Switching Test Circuit
CEM3133
10
0
D=0.5
0.2
0.1
10
-1
10
-2
10
-3
0.05
P
DM
0.02
0.01
t
1
t
2
1. R
θ
JA
(t)=r (t) * R
θ
JA
2. R
θ
JA
=See Datasheet
3. T
JM-
T
A
= P* R
θ
JA
(t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 12. Normalized Thermal Transient Impedance Curve
