CET-Chino-Excel-Tech-CEM3178
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CEM3178
PRELIMINARY
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 7.6A, R
DS(ON)
= 22m
Ω
@V
GS
= 10V.
R
DS(ON)
= 33m
Ω
@V
GS
= 4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D
1
8
D
1
7
D
2
6
D
2
5
SO-8
1
2
3
4
1
S
1
G
1
S
2
G
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 C unless otherwise noted
Parameter
Symbol
V
DS
V
GS
I
D
Limit
Units
Drain-Source Voltage
30
±
20
7.6
30
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
I
DM
Maximum Power Dissipation
P
D
2.0
W
Thermal Characteristics
Parameter
Symbol
Thermal Resistance, Junction-to-Ambient
b
R
θ
JA
62.5
C/W
Rev 3.
2010.Apr
Specification and data are subject to change without notice .
1
CEM3178
Electrical Characteristics
T
A
= 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
BV
DSS
I
DSS
V
GS
= 0
V
,
I
D
= 250
µ
A
V
DS
= 30
V
,
V
GS
= 0V
V
GS
= 20
V
,
V
DS
= 0V
V
GS
= -20
V
,
V
DS
= 0V
30
V
1
µ
A
nA
nA
I
GSSF
I
GSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
V
GS(th)
R
DS(on)
V
GS
= V
DS
, I
D
= 250
µ
A
V
GS
= 10
V
,
I
D
= 6.3A
V
GS
= 4.5
V
,
I
D
= 5.0A
1
3
V
17
27
22
33
m
Ω
m
Ω
On-Resistance
Dynamic Characteristics
d
Forward Transconductance
Input Capacitance
g
FS
C
iss
C
oss
C
rss
V
DS
= 15
V
,
I
D
= 6A
5
S
590
125
95
pF
pF
pF
V
DS
= 15
V
,
V
GS
= 0
V
,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
10
4
20
8
ns
ns
V
DD
= 15
V
,
I
D
= 1A,
V
GS
= 10
V
,
R
GEN
= 6
Ω
Turn-On Rise Time
Turn-Off Delay Time
25
4
50
8
ns
Turn-Off Fall Time
ns
T
o
tal Gate Charge
Q
g
13
2
17
nC
nC
nC
V
DS
= 15
V
,
I
D
= 7A,
V
GS
= 10V
Gate-Source Charge
Q
gs
Q
gd
Gate-Drain Charge
3.5
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
I
S
1.6
1.2
A
V
V
SD
V
GS
= 0
V
,
I
S
= 1.6A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEM3178
25
20
15
10
15
12
9
V
GS
=10,8,6,5V
V
GS
=4V
6
25 C
V
GS
=3V
3
5
0
T
J
=125 C
-55 C
0
0
1
2
3
4
3
4
1
2
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
900
750
600
450
300
150
0
I
D
=6.3A
V
GS
=10V
C
iss
C
oss
C
rss
0
5
10
15
20
25
-100
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance
V
a
riation
with
T
e
mperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
=V
GS
I
D
=250µA
V
GS
=0V
10
1
10
0
10
-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEM3178
10
2
10
1
10
0
10
-1
10
-2
10
8
V
DS
=15V
I
D
=7A
R
DS(ON)
Limit
1ms
10ms
100ms
1s
DC
6
4
2
T
A
=25 C
T
J
=150 C
Single Pulse
0
10
-2
10
-1
10
0
10
1
10
2
0
4
8
12
16
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
V
DD
on
t
t
off
d(off)
t
r
t
d(on)
OUT
R
L
t
f
t
V
IN
90%
10%
90%
D
OUT
V
V
V
GS
10%
INVERTED
R
GEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
P
DM
0.1
t
1
t
2
0.05
0.02
1. R
θ
JA
(t)=r (t) * R
θ
JA
2. R
θ
JA
=See Datasheet
3. T
JM-
T
A
= P* R
θ
JA
(t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
