CET-Chino-Excel-Tech-CEM6056L
| Part # | CET-Chino-Excel-Tech-CEM6056L |
Download  | CET-Chino-Excel-Tech-CEM6056L |
CEM6056L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 14.5A, R
DS(ON)
= 7.8 m
Ω
@V
GS
= 10V.
R
DS(ON)
= 10 m
Ω
@V
GS
= 4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
RoHS compliant.
D
8
D
D
6
D
5
7
Surface mount Package.
SO-8
1
2
3
4
1
S
S
S
G
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 C unless otherwise noted
Parameter
Symbol
V
DS
V
GS
I
D
Limit
Units
Drain-Source Voltage
60
±
20
14.5
58
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
I
DM
Maximum Power Dissipation
P
D
2.5
W
C
Operating and Store Temperature Range
T
J
,T
stg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient
b
R
θ
JA
50
C/W
Rev 3.
2015.Dec
Details are subject to change without notice .
1
CEM6056L
Electrical Characteristics
T =
25 C unless otherwise noted
c
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BV
DSS
I
DSS
V
GS
= 0
V
,
I
D
= 250
µ
A
V
DS
= 60
V
,
V
GS
= 0V
V
GS
= 20
V
,
V
DS
= 0V
V
GS
= -20
V
,
V
DS
= 0V
60
V
1
µ
A
nA
nA
I
GSSF
I
GSSR
100
-100
Gate Threshold Voltage
V
GS(th)
R
DS(on)
V
GS
= V
DS
, I
D
= 250
µ
A
1
3
V
Static Drain-Source
On-Resistance
6.2
7.3
7.8
10
m
Ω
m
Ω
V
GS
= 10
V
,
I
D
= 8A
V
GS
= 4.5
V
,
I
D
= 4A
Dynamic Characteristics
c
Input Capacitance
C
iss
C
oss
C
rss
3495
360
pF
pF
pF
V
DS
= 25
V
,
V
GS
= 0
V
,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Rise Time
205
t
d(on)
t
r
t
d(off)
t
f
24
10
ns
ns
V
DD
= 30
V
,
I
D
= 14.5A,
V
GS
= 10
V
,
R
GEN
= 3.6
Ω
Turn-Off Delay Time
Turn-Off Fall Time
101
20
ns
ns
T
o
tal Gate Charge
Q
g
47
nC
nC
nC
V
DS
= 48
V
,
I
D
=14.5A,
V
GS
= 4.5V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
11
26
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
b
I
S
2
A
V
V
SD
V
GS
= 0
V
,
I
S
= 2A
1.2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
2
CEM6056L
15
12
9
25
20
15
10
5
25 C
V
GS
=10,8,6,3V
6
T
J
=125 C
3
0
-55 C
V
GS
=2V
0
0
1
2
3
4
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
4800
4000
3200
2400
1600
800
2.2
1.9
1.6
1.3
1.0
0.7
0.4
I
D
=8A
V
GS
=10V
C
iss
C
oss
C
rss
0
0
5
10
15
20
25
-100
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance
V
a
riation
with
T
e
mperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
=V
GS
I
D
=250µA
V
GS
=0V
10
1
10
0
10
-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CEM6056L
10
2
10
1
10
0
10
-1
10
-2
5
4
R
DS(ON)
Limit
V
DS
=48V
I
D
=14.5A
10ms
100ms
1s
DC
3
2
1
T
A
=25 C
T
J
=150 C
Single Pulse
0
10
-2
10
-1
10
0
10
1
10
2
0
10
20
30
40
50
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
V
DD
on
t
t
off
d(off)
t
r
t
d(on)
OUT
R
L
t
f
t
V
IN
90%
10%
90%
D
OUT
V
V
V
GS
10%
INVERTED
R
GEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
0.1
0.05
0.02
P
DM
t
1
t
2
0.01
10
-2
1. R
θ
JA
(t)=r (t) * R
θ
JA
2. R
θ
JA
=See Datasheet
3. T
JM-
T
A
= P* R
θ
JA
(t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
