CET-Chino-Excel-Tech-CES2316
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CES2316
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 4.8A, R
DS(ON)
= 34m
Ω
@V
GS
= 10V.
R
DS(ON)
= 50m
Ω
@V
GS
= 4.5V.
High dense cell design for extremely low R
DS(ON)
Lead free product is acquired.
Rugged and reliable.
.
D
SOT-23 package.
G
D
S
G
S
SOT-23
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 C unless otherwise noted
Parameter
Symbol
V
DS
V
GS
I
D
Limit
Units
Drain-Source Voltage
30
±
20
4.8
20
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
I
DM
Maximum Power Dissipation
P
D
1.25
W
C
Operating and Store Temperature Range
T
J
,T
stg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient
b
R
θ
JA
100
C/W
Rev 1.
2005.December
1
CES2316
Electrical Characteristics
T
A
= 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BV
DSS
I
DSS
V
GS
= 0
V
,
I
D
= 250
µ
A
V
DS
= 30
V
,
V
GS
= 0V
V
GS
= 20
V
,
V
DS
= 0V
V
GS
= 20
V
,
V
DS
= 0V
30
V
1
µ
A
nA
nA
I
GSSF
I
GSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
V
GS(th)
R
DS(on)
V
GS
= V
DS
, I
D
= 250
µ
A
V
GS
= 10
V
,
I
D
= 6A
1.0
3.0
34
50
V
27
36
m
Ω
m
Ω
On-Resistance
V
GS
= 4.5
V
,
I
D
= 4.9A
Dynamic Characteristics
d
Forward Transconductance
Input Capacitance
g
FS
V
DS
= 15
V
,
I
D
= 6A
8
S
8
C
iss
C
oss
C
rss
610
145
95
pF
pF
pF
V
DS
= 15
V
,
V
GS
= 0
V
,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
9
3
20
8
ns
ns
V
DD
= 15
V
,
I
D
= 5.5A,
V
GS
= 10
V
,
R
GEN
= 3
Ω
Turn-On Rise Time
Turn-Off Delay Time
24
4
50
10
16
ns
Turn-Off Fall Time
ns
T
o
tal Gate Charge
Q
g
12.3
1.5
2.5
nC
nC
nC
V
DS
= 15
V
,
I
D
= 6A,
V
GS
= 10V
Gate-Source Charge
Q
gs
Q
gd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
I
S
1.7
1.2
A
V
V
SD
V
GS
= 0
V
,
I
S
= 1.7A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CES2316
40
30
20
10
0
40
30
20
10
0
V
GS
=10,9,8,7,6V
25 C
V
GS
=5V
V
GS
=4V
T
J
=125 C
-55 C
V
GS
=3V
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
900
750
600
450
300
150
0
I
D
=6A
V
GS
=10V
C
iss
C
oss
C
rss
0
3
6
9
12
15
-100
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance
V
a
riation
with
T
e
mperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
=V
GS
I
D
=250µA
V
GS
=0V
10
1
10
0
10
-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CES2316
10
2
10
1
10
0
10
-1
10
-2
10
8
V
DS
=15V
I
D
=6A
R
DS(ON)
Limit
1ms
10ms
100ms
1s
6
DC
4
2
T
A
=25 C
T
J
=150 C
Single Pulse
0
10
-2
10
-1
10
0
10
1
10
2
0
3
6
9
12
15
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
8
V
DD
on
t
t
off
d(off)
t
r
t
d(on)
OUT
R
L
t
f
t
V
IN
90%
10%
90%
D
OUT
V
V
V
GS
10%
INVERTED
R
GEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
0.1
0.05
0.02
P
DM
t
1
t
2
0.01
10
-2
1. R
θ
JA
(t)=r (t) * R
θ
JA
2. R
θ
JA
=See Datasheet
3. T
JM-
T
A
= P* R
θ
JA
(t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
