CET-Chino-Excel-Tech-CES2317
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CES2317
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.1A, R
DS(ON)
= 80m
Ω
@V
GS
= -10V.
R
DS(ON)
= 90m
Ω
@V
GS
= -4.5V.
R
DS(ON)
= 120m
Ω
@V
GS
= -2.5V.
High dense cell design for extremely low R
DS(ON)
.
D
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-23 package.
G
D
S
G
S
SOT-23
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 C unless otherwise noted
Parameter
Symbol
V
DS
V
GS
I
D
Limit
Units
Drain-Source Voltage
-30
±
12
-3.1
-12
V
V
A
A
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
I
DM
Maximum Power Dissipation
P
D
1.25
W
C
Operating and Store Temperature Range
T
J
,T
stg
-55 to 150
Thermal Characteristics
Parameter
Symbol
Limit
Units
Thermal Resistance, Junction-to-Ambient
b
R
θ
JA
100
C/W
Rev 1
2012.Jan
Details are subject to change without notice .
1
CES2317
Electrical Characteristics
T
A
= 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
BV
DSS
I
DSS
V
GS
= 0
V
,
I
D
= -250
µ
A
V
DS
= -30
V
,
V
GS
= 0V
V
GS
= 12
V
,
V
DS
= 0V
V
GS
= -12
V
,
V
DS
= 0V
-30
V
-1
µ
A
nA
nA
I
GSSF
I
GSSR
100
-100
Gate Threshold Voltage
V
GS(th)
R
DS(on)
V
GS
= V
DS
, I
D
= -250
µ
A -0.5
V
GS
= -10
V
,
I
D
= -3.0A
-1.2
80
V
63
m
Ω
Static Drain-Source
On-Resistance
V
GS
= -4.5
V
,
I
D
= -1.5A
V
GS
= -2.5
V
,
I
D
= -1.0A
70
86
90
m
Ω
m
Ω
120
Dynamic Characteristics
d
Input Capacitance
C
iss
C
oss
C
rss
660
90
pF
pF
pF
V
DS
= -15
V
,
V
GS
= 0
V
,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
65
t
d(on)
t
r
t
d(off)
t
f
11
6
22
12
66
14
9.1
ns
ns
V
DD
= -15
V
,
I
D
= -1A,
V
GS
= -4.5
V
,
R
GEN
= 6
Ω
Turn-Off Delay Time
Turn-Off Fall Time
33
7
ns
ns
T
o
tal Gate Charge
Q
g
7.0
0.9
2.3
nC
nC
nC
V
DS
= -15
V
,
I
D
= -3.0A,
V
GS
= -4.5V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
I
S
-1.0
-1.2
A
V
V
SD
V
GS
= 0
V
,
I
S
= -1.0A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CES2317
5
4
3
2
5
4
3
2
1
0
-V
GS
=10,8,6,3V
25 C
-V
GS
=2V
T
J
=125 C
1
0
-55 C
0
0.2
0.4
0.6
0.8
1.0
0
0.4
0.8
1.2
1.6
2.0
2.5
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
900
750
600
450
300
150
0
I
D
=-3.0A
V
GS
=-10V
C
iss
C
oss
C
rss
-100
-50
0
50
100
150
200
0
5
10
15
20
25
-V
DS
, Drain-to-Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance
V
a
riation
with
T
e
mperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
DS
=V
GS
V
GS
=0V
I
D
=-250µA
10
1
10
0
10
-1
-50 -25
0
25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
T
J
, Junction Temperature( C)
-V
SD
, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CES2317
10
2
10
1
10
0
10
-1
10
-2
5
4
3
2
1
0
V
DS
=-15V
I
D
=-3.0A
R
DS(ON)
Limit
1ms
10ms
100ms
1s
DC
T
A
=25 C
T
J
=150 C
Single Pulse
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
Qg, Total Gate Charge (nC)
-V
DS
, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
V
DD
on
t
t
off
d(off)
t
r
t
d(on)
OUT
R
L
t
f
t
V
IN
90%
10%
90%
D
OUT
V
V
V
GS
10%
INVERTED
R
GEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
0.1
0.05
0.02
P
DM
t
1
t
2
0.01
10
-2
1. R
θ
JA
(t)=r (t) * R
θ
JA
2. R
θ
JA
=See Datasheet
3. T
JM-
T
A
= P* R
θ
JA
(t)
4. Duty Cycle, D=t1/t2
Single Pulse
10
-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
