Chongqing-Pingwei-Tech-20N65MF
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20N65MF
20 Amps,650 Volts N-CHANNEL MOSFET
FEATURE
TO-220MF
20A,650
V
,
R
DS(ON)MAX
=0.50
Ω
@V
GS
=10V/10A
Low gate charge
Low C
iss
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
(T
C
=25
℃
,unless otherwise noted)
Parameter
Symbol
UNIT
20N65MF
Drain-Source
V
o
ltage
V
DSS
V
GSS
I
D
650
±
30
20
V
Gate-Source
V
o
ltage
Continuous Drain Current
A
Pulsed Drain Current(Note1)
I
DM
80
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
E
AS
900
mJ
A
I
AR
20
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
“
from case for 5 seconds
E
AR
28
mJ
V/ns
℃
dv/dt
T
J
,T
STG
4.5
-55 to +150
T
L
260
℃
Thermal Characteristics
Parameter
Symbol
R
thJC
TO-220MF
Units
℃
/W
W
Maximum Junction-to-Case
2.3
54
Maximum Power Dissipation
T
C
=25
℃
P
D
Electrical Characteristics
(T
c
=25
℃
,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown
V
o
ltage
Breakdown Temperature Coefficient
BV
DSS
ΔBV
DSS
/ΔT
J
V
GS
=0
V
,
I
D
=250uA
650
－
－
－
V
Reference to 25
℃，
I
D
=250uA
－
0.6
V/
℃
Zero Gate
V
o
ltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
On Characteristics
I
DSS
V
DS
=650
V
,
V
GS
=0V
V
GS
=30
V
,
V
DS
=0V
V
GS
=-30
V
,
V
DS
=0V
－
－
－
－
－
－
1
μ
A
nA
I
GSSF
100
-100
I
GSSR
nA
Gate-Source Threshold
V
o
ltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
V
GS(th)
R
DS(on)
V
DS
=10
V
,
I
D
=250uA
V
GS
=10
V
,
I
D
=10A
2
－
4
V
－
0.32
0.5
Ω
C
iss
C
oss
C
rss
pF
pF
pF
V
DS
=25
V
,
V
GS
=0
V
,
f=1.0MHZ
－
－
－
2370
1280
95
－
－
－
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
d(on)
t
r
t
d(off)
t
f
ns
ns
V
DD
=325
V
,
I
D
=20A,
－
－
－
－
40
5
62
140
230
65
－
－
R
G
=25Ω
(Note4,5)
ns
－
ns
－
Qg
Qgs
Qgd
nC
nC
nC
V
DS
=480
V
,
I
D
=20A,
V
GS
=10
V
,
(
Note4,5)
75
100
25
50
13.5
36
10
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward
Current
Pulsed Diode Forward Current
Diode Forward
V
o
ltage
I
S
I
SM
V
SD
t
rr
A
A
－
－
－
－
－
－
－
20
80
1.5
－
V
I
S
=20A,V
GS
=0V
V
GS
=0
V
,
I
S
=20A,
dI
F
/dt=100A/us,
－
Reverse Recovery Time
ns
530
10.5
Reverse Recovery Charge
Q
rr
(Note4)
μ
C
－
Notes
1.
2.
3.
4.
5.
Repetitive Rating:pulse width limited by maximum junction temperature.
V
DD
=50
V
,
L=10mH,R
g
=25
Ω
,I
AS
=20A , starling T
J
=25
℃
.
I
SD
≤
I
D
,dI/dt=200A/us,V
DD
≤
BV
DSS
,starting T
J
=25
℃
.
Pulse width≤300us;duty cycle≤2%.
Repetitive rating; pulse width limited by maximum junction temperature.
RATINGAND CHARACTERISTIC CURVES
RATINGAND CHARACTERISTIC CURVES
24
20
30
15V TOP
14V
13V
12V
25
11V
10V
9V
8V
16
12
8
20
15
10
5
V
T
J
=25℃
0
8
4
=
V
DS
7V
6V
5V
4
0
0
0
20
40
60
80
100 120
0
5
10
15
20
25
30
Q
g
,Total Gate Charge(nC)
V
DS
,Drain-to-Source Voltage(V)
10000
1000
100
100
10
1
C
iss
C
oss
T
J
=150℃
T
J
=25℃
V
GS
= 0
V,f = 1MHz
C
iss
=
C
gs
C
g
d
,C
ds
Shorted
C
rss
=
C
g
d
C
oss
=
C
ds
+ C
gd
C
rss
10
V
GS
=0
V
1
0.1
0
100 200 300 400 500 600
V
DS
,Drain-to-Source Voltage(V)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
DS
,Source-Drain Voltage(V)
800
750
3
I
D
=10.0
A
2.5
700
650
600
550
500
2
1.5
1
V
GS
=10
V
0.5
0
-60 -40 -20
0
25 50 75
100 125
150 175
-75 -50 -25
0
25 50 75
100125 150 175
T
J
, Junction Temperature(
℃
)
T
J
, Junction Temperature(
℃
)
10
Operation in this Area
Limited by R
DS(on)
Common Source
Tc=25
℃
Pulse Test
I
DM
=Limited
100
10
100
μ
s
1
Limited by R
DS(on)
1
1ms
V
GS
=10
V
10ms
0.1
0.01
T
C
=25
℃
T
J
=150
℃
Single Pulse
BVDSS Limited
100
0.1
0.1
1
10
100
1
10
1000
I
D
, Drain Current(A)
V
DS
,Drain-to-Source Voltage(V)
1000
800
600
400
200
0
5
4
3
2
1
0
Common Source
V
DS
=10V
I
D
=250uA
Pulse Test
25
50
75
100
125
150
-80 -40
0
40
80
120 140
T
CH
, Channel Temperature(Initial) (
℃
)
T
C
, Case Temperature(
℃
)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Time(s)
PACKAGE OUTLINE DIMENSIONS
TO-220MF
TO-220MF
Min
B
L
Dim
Max
A
.590(15.0) .650(16.5)
B
.393(10.0) .414(10.5)
C
.118(3.00) .138(3.50)
D
.118(3.00) .146(3.70)
E
.512(13.0) .551(14.0)
F
.028(0.70) .035(0.90)
G
.114(2.90) .138(3.50)
H
.255(6.50) .280(7.10)
I
.173(4.40) .197(5.00)
J
.102(2.60) .110(2.80)
K
.018(0.45) .026(0.65)
L
.092(2.35) .109(2.75)
G
I
C
H
A
PIN 1
2
3
D
E
J
P
.890(2.25) .113(2.85)
F
P
K
