Collective-Semiconductor-Technology-3400

Part #Collective-Semiconductor-Technology-3400
Download 
Collective-Semiconductor-Technology-3400
Collective Semiconductor Technology Zhongshan Co., Ltd.  
SEMICONDUCTOR TECHNICAL D
A
TA (
C05F191201)  
C
ST  
N-Channel Enhancement Mode Field Effect Transistor  
3400  
1
、
Features  
■
High dense cell design for extremely low RDS(ON)  
■
Exceptional on-resistance and maximum DC current capability  
■
Load/Power Switching  
■
Interfacing Switching  
2
、
Pinning information  
PIN  
Description  
Simplified outline  
3
1
GATE(G)  
2
3
SOURCE(S)  
DRAIN(D)  
1
2
3
、
Limiting value  
(Ta = 25
℃
unless otherwise noted).  
SYMBOL PARAMETER  
Limit  
30  
UNIT  
V
Vds  
Vgs  
Id  
Drain-Source Voltage  
±
12  
5.8  
V
Gate-Source Voltage  
Continuous Drain Current  
Power Dissipation  
A
Pd  
350  
357  
+150  
mW  
℃
/W  
℃
R

θJA  

Tj  
Thermal Resistance from Junction to Ambient  
Operating Junction
T
e
mperature  
Tstg  
-50 to
 
+150  
Operating Junction and Storage
T
e
mperature Range  
℃
4
、
Electrical Characteristics
(
T

a

= 25
℃
unless otherwise noted
)  
SYMBOL  
BV

DSS  

V

th(GS)  

PARAMETER  
CONDITIONS  
MIN Typ
 
MAX UNIT  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
30  
V
V
VGS=0 V, ID=250 µA  
VDS=VGS, ID=250 µA  
0.7  
1.4  
±
100  
I

GSS  

I

DSS  

Gate-body Leakage  
nA  
u
VDS=0
V
,
V
GS=±12V  
VDS=24 VGS=0 V  
Zero Gate Voltage Drain Current  
1
35  
40  
52  
VGS=10
V
,
I
D=5.8A  
VGS=4.5
V
,
I
D=5A  
VGS=2.5
V
,
I
D=4A  
VDS=5
V
,
I
D=5A  
R

DS(ON)  

Drain-Source On-Resistance  
m
Ω  
g

fs  

V

SD  

Forward Trans conductance  
Diode Forward Voltage  
Input Capacitance*  
8
S
V
IS=1A, VGS=0 V  
1.0  
C

iss  

1050 pF  
VDS=15
V
,  
f=1MHz  
VGS=0
V
,  
C

oss  

C

rss  

T

d(on)  

T

d(off)  

Output Capacitance*  
Reverse Transfer Capacitance*  
Turn-on Time*  
99  
77  
pF  
pF  
VDS=15
V
,
VGS=10V  
RL=2.7
Ω
, RG=3
Ω  
5
nS  
nS  
Turn-off Time*  
40  
*These parameters have no way to verify.  
C
ST  
TEL
:
+86-760-89965801  
1

MOSFETS  
3400  
5
、
Electrical Characteristics Curve  
C
ST  
TEL
:
+86-760-89965801  
2

MOSFETS  
3400  
6
、
Package outline(SOT-23)  
Marking:  
A09T  
Inches  
Milimeters  
DIM  
Min  
Type  
Max  
Min  
Type  
Max  
A
B
C
D
E
F
0.104  
0.116  
2.65  
2.95  
0.115  
0.075  
2.92  
1.90  
0.014  
0.010  
0.018  
0.022  
0.35  
0.25  
0.45  
0.051  
0.043  
0.006  
1.30  
1.10  
0.16  
G
H
0.55  
C
ST  
TEL
:
+86-760-89965801  
3