Collective-Semiconductor-Technology-3400
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Collective Semiconductor Technology Zhongshan Co., Ltd.
SEMICONDUCTOR TECHNICAL D
A
TA (
C05F191201)
C
ST
N-Channel Enhancement Mode Field Effect Transistor
3400
1
、
Features
■
High dense cell design for extremely low RDS(ON)
■
Exceptional on-resistance and maximum DC current capability
■
Load/Power Switching
■
Interfacing Switching
2
、
Pinning information
PIN
Description
Simplified outline
3
1
GATE(G)
2
3
SOURCE(S)
DRAIN(D)
1
2
3
、
Limiting value
(Ta = 25
℃
unless otherwise noted).
SYMBOL PARAMETER
Limit
30
UNIT
V
Vds
Vgs
Id
Drain-Source Voltage
±
12
5.8
V
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
A
Pd
350
357
+150
mW
℃
/W
℃
R
θJA
Tj
Thermal Resistance from Junction to Ambient
Operating Junction
T
e
mperature
Tstg
-50 to
+150
Operating Junction and Storage
T
e
mperature Range
℃
4
、
Electrical Characteristics
(
T
a
= 25
℃
unless otherwise noted
)
SYMBOL
BV
DSS
V
th(GS)
PARAMETER
CONDITIONS
MIN Typ
MAX UNIT
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
30
V
V
VGS=0 V, ID=250 µA
VDS=VGS, ID=250 µA
0.7
1.4
±
100
I
GSS
I
DSS
Gate-body Leakage
nA
u
VDS=0
V
,
V
GS=±12V
VDS=24 VGS=0 V
Zero Gate Voltage Drain Current
1
35
40
52
VGS=10
V
,
I
D=5.8A
VGS=4.5
V
,
I
D=5A
VGS=2.5
V
,
I
D=4A
VDS=5
V
,
I
D=5A
R
DS(ON)
Drain-Source On-Resistance
m
Ω
g
fs
V
SD
Forward Trans conductance
Diode Forward Voltage
Input Capacitance*
8
S
V
IS=1A, VGS=0 V
1.0
C
iss
1050 pF
VDS=15
V
,
f=1MHz
VGS=0
V
,
C
oss
C
rss
T
d(on)
T
d(off)
Output Capacitance*
Reverse Transfer Capacitance*
Turn-on Time*
99
77
pF
pF
VDS=15
V
,
VGS=10V
RL=2.7
Ω
, RG=3
Ω
5
nS
nS
Turn-off Time*
40
*These parameters have no way to verify.
C
ST
TEL
:
+86-760-89965801
1
MOSFETS
3400
6
、
Package outline(SOT-23)
Marking:
A09T
Inches
Milimeters
DIM
Min
Type
Max
Min
Type
Max
A
B
C
D
E
F
0.104
0.116
2.65
2.95
0.115
0.075
2.92
1.90
0.014
0.010
0.018
0.022
0.35
0.25
0.45
0.051
0.043
0.006
1.30
1.10
0.16
G
H
0.55
C
ST
TEL
:
+86-760-89965801
3
