Collective-Semiconductor-Technology-BT137-800E
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Collective Semiconductor Technology Zhongshan Co., Ltd.
SEMICONDUCTOR TECHNICAL D
A
TA (
C03M180101)
C
ST
Four quadrant Triacs
BT137-800E
1
、
Description
2
、
Applications
Designed primarily for industrial and consumer applications for full
wave control of ac loads such as appliance controls, heater controls,
motor controls, and other power switching applications.
Motor control
Industrial and domestic lighting
Heating
Static switching
3
、
Features
Blocking voltage to 800 V
On-state RMS current to 8 A
Ultra low gate trigger current
Low cost package.
4
、
Pinning information
PIN
Description
Simplified outline
Symbol
T2
1
main terminal 1(T1)
main terminal 2(T2)
gate (G)
T1
2
G
3
TO-220F
5
、
Quick reference data
SYMBOL
V
DRM
V
RRM
I
T(RMS)
PARAMETER
MAX
UNIT
Repetitive peak off-state voltages
RMS on-state current
800
8
V
A
A
Non-repetitive peak on-state current
65
I
TSM
6
、
Thermal characteristics
SYMBOL PARAMETER
Value
UNIT
junction to case(AC)
Rth(j-c)
TO-220F
5.5
C/W
C
ST
TEL
：
+86-760-89965801
1
Four quadrant Triacs
BT137-800E
7
、
Limiting value
Limiting values in accordance with the Maximum System(IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN
–
MAX
UNIT
V
DRM
V
RRM
Repetitive peak off-state
voltages
800
V
Full Cycle Sine Wave 50 to 60 Hz
(TC = 95
C)
–
–
I
T(RMS)
I
TSM
8
A
RMS on-state current
Non-repetitive peak
Surge current
I
2
t for fusing
65
A
One Full cycle, 60 Hz, T
J
= +110
C
I
2
t
t =8.3ms
21
2
A
2
s
A
–
I
GM
Peak gate current
Peak gate power
Average gate power
Storage temperature
–
–
Pulse Width ≤
1.0
s, TC = 85
C
Pulse Width ≤1.0
s, TC = 85
C
Pulse Width ≤1.0
s, TC = 85
C
P
GM
P
G(
A
V)
T
stg
5
W
–
0.5
150
W
-40
°C
Operating junction
temperature
T
j
-40
125
°C
8
、
Characteristics
T
J
= 25
℃
unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX UNIT
Static characteristics
Gate trigger current
I
GT
V
D
= 12 V; I
T
= 0.1A
T2+ G+
–
–
–
–
–
–
–
–
10
10
10
25
mA
mA
mA
mA
T2+ G-
T2- G-
T2- G+
Latching current
I
L
V
D
= 12 V; I
GT
= 0.1A
T2+ G+
–
–
–
–
–
–
–
–
15
20
15
15
mA
mA
mA
mA
T2+ G-
T2- G-
T2- G+
Holding current
On-state voltage
I
H
Main Terminal Voltage = 12 Vdc,
Gate Open, Initiating Current ≤1 Adc
T
J
= 25
C
–
–
15
mA
V
TM
V
GT
I
TM
= 10A,tp=380us
–
–
–
–
1.7
1.5
V
V
Gate trigger voltage
(Continuous dc)
Main Terminal Voltage = 12 Vdc, R
L
= 100 Ohms, T
J
=
–
40
C
All Quadrants
Gate Non
–
Trigger Voltage
VD=VDRM Tj=125
℃
RL=3.3KΩ
V
GD
0.2
50
–
–
–
–
V
Dynamic Characteristics
Critical rate of rise of
dV/dt
V
DM
= 67% V
DRM(max)
; T
j
= 125 °C;
Exponential wave form;
RGK=1KΩ
V/µs
off-state voltage
C
ST
TEL
：
+86-760-89965801
2
Four quadrant Triacs
BT137-800E
9
、
Electrical Characteristics Curve
C
ST
TEL
：
+86-760-89965801
3
Four quadrant Triacs
BT137-800E
10
、
Package outline(TO-220F)
Marking:
BT137
800E
C
ST
XXX
Milimeters
DIM
Inches
Min
4.40
0.74
0.48
2.40
2.60
8.80
9.70
6.40
Type
Max
4.80
0.83
0.75
2.70
3.00
9.30
10.3
7.00
Min
Type
Max
A
B
–
0.173
0.029
0.019
0.094
0.102
0.346
0.382
0.252
–
0.189
0.033
0.030
0.106
0.118
0.366
0.406
0.276
0.80
0.031
C
–
–
C2
C3
D
–
–
–
–
–
–
–
E
–
–
F
–
G
2.54
–
0.1
–
H
28.0
1.14
29.8
1.70
1.102
0.045
1.173
0.067
L1
L2
L3
V1
3.10
–
0.122
–
3.30
45
o
0.130
45
o
C
ST
TEL
：
+86-760-89965801
4
