Comchip-CMS3415-HF
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MOSFET
CMS3415-HF
P-Channel
RoHS Device
Halogen Free
Features
SOT-23
– V
DS
= -20
V
,
I
D
= -4A.
R
DS(ON)
< 60m
Ω
@ V
GS
= -2.5V
R
DS(ON)
< 45m
Ω
@ V
GS
= -4.5V
ESD rating: 2500V HBM
0.119(3.00)
0.110(2.80)
– High power and current handling capability.
– Lead free product is acquired.
– Surface mount package.
3
0.056(1.40)
0.047(1.20)
1
2
0.079(2.00)
0.071(1.80)
Mechanical data
– Case: SOT-23, molded plastic.
– Mounting position: Any.
0.006(0.15)
0.003(0.08)
0.041(1.05)
0.035(0.90)
0.100(2.55)
0.089(2.25)
Description
The CMS3415 uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in
PWM applications. It is ESD protested.
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Circuit Diagram
Application
3
D
G : Gate
– PWM applications.
– Load switch.
S : Source
D : Drain
1
G
2
S
Maximum Ratings
(
T
a
=25°C unless otherwise noted )
Symbol
Parameter
Limit
Unit
Drain-source voltage
Gate-source voltage
V
DS
V
GS
-20
±10
V
V
Drain current-continuous
I
D
-4
A
Drain current-pulsed
(Note 1)
I
DM
-30
A
Maximum power dissipation
P
D
1.4
W
°C
Operating junction and storage temperature range
T
J
, T
STG
-55 to 150
Thermal Characteristic
Thermal resistance, junction to ambient (Note 2)
R
θ
JA
89.3
°C/W
REV:B
Page 1
SP-JTR34
Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics
(
T
a
=25°C unless otherwise noted )
Symbol
Condition
Parameter
Min
Typ
Max
Unit
Off Characteristics
Drain-source breakdown voltage
BV
DSS
I
DSS
V
GS
= 0
V
,
I
D
= -250µA
V
DS
= -20
V
,
V
GS
= 0V
V
GS
= ±10
V
,
V
DS
= 0V
-20
V
Zero gate voltage drain current
Gate-body leakage current
On Characteristics
(Note 3)
Gate threshold voltage
-1
µA
nA
I
GSS
±10
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5
V
,
I
D
= -4A
V
GS
= -2.5
V
,
I
D
= -4A
V
DS
= -5
V
,
I
D
= -4A
V
GS(th)
-0.35
8
-0.55
34
-0.9
45
V
m
Ω
S
R
DS(ON)
g
FS
Drain-source on-state resistance
44
60
Forward transconductance
Dynamic Characteristics
(Note 4)
Input capacitance
C
iss
C
oss
C
rss
950
165
120
Output capacitance
pF
V
DS
= -10
V
,
V
GS
= 0, f = 1MHz
Reverse transfer capacitance
Switching Characteristics
(Note 4)
Turn-on delay time
t
d(on)
t
r
12
10
19
25
12
1.4
3.6
Turn-on rise time
V
DD
= -10
V
,
R
L
= 2.5
Ω
V
GS
= -4.5
V
,
R
GEN
= 3
Ω
nS
nC
Turn-off delay time
t
d(off)
t
f
Turn-off fall time
T
o
tal gate charge
Gate-source charge
Q
g
Q
gs
V
DS
= -10
V
,
I
D
= -4A, V
GS
= -4.5V
V
GS
= 0
V
,
I
S
= -4A
Gate-drain charge
Q
gd
Drain-Source Diode Characteristics
Diode forward voltage (Note 3)
Diode forward current (Note 2)
V
SD
I
S
-1.2
-4
V
A
Notes: 1. Repetitive rating: Pulse width limited by maximum junction temperature.
2. Surface mounted on FR4 board, t ≤ 10 sec.
3. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2% .
4. Guaranteed by design, not subject to production.
REV:B
Page 2
SP-JTR34
Comchip Technology CO., LTD.
MOSFET
Typical Electrical and Thermal Characteristics (CMS3415-HF)
Fig.1 – Switching
T
e
st Circuit
Fig.2 – Switching Waveforms
Vdd
RI
t
on
t
off
t
r
t
d(on)
Vout
t
f
t
d(off)
Vin
D
Vout
90%
90%
Vgs
INVERTED
Rgen
G
10%
90%
10%
50%
S
Vin
50%
10%
PULSE WIDTH
Fig.3 – Power Dissipation
Fig.4 – Safe Operation Area
Junction
T
e
mperature, T
J
(°C)
Drain-Source Voltage, V
DS
(V)
Fig.5 – Output Characteristics
Fig.6 – Drain-Source On-Resistance
Drain-Source Voltage, V
DS
(V)
Drain Current, I
D
(A)
REV:B
Page 3
SP-JTR34
Comchip Technology CO., LTD.
MOSFET
Typical Electrical and Thermal Characteristics (CMS3415-HF)
Fig.7 – Transfer Characteristics
Fig.8 – Drain-Source On-Resistance
Gate-Source Voltage, V
GS
(V)
Fig.9 – R
DS(ON)
vs V
GS
Junction
T
e
mperature, T
J
(°C)
Fig.10 – Capacitance vs V
DS
Gate-Source Voltage, V
GS
(V)
Fig.11 – Gate Charge
Drain-Source Voltage, V
DS
(V)
Fig.12 – Source-Drain Diode Forward
Gate Charge, Q
g
(nC)
Source-Drain Voltage, V
SD
(V)
REV:B
Page 4
SP-JTR34
Comchip Technology CO., LTD.
MOSFET
Typical Electrical and Thermal Characteristics (CMS3415-HF)
Fig.13 – Normalized Maximum Transient Thermal Impedance
Square Wave Pulse Duration, (sec)
REV:B
Page 5
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Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
P0
P1
D
2
D
D
1
W
1
SYMBOL
A
B
C
d
D
D
1
D
2
(mm)
SOT-23
SOT-23
3.15
±
0.10
2.77
±
0.10
1.22
±
0.10
1.50 ± 0.10
178.00
±
2.00
54.40
±
1.00
13.00
±
1.00
(inch)
0.124
±
0.004
0.109
±
0.004
0.048
±
0.004
0.059 ± 0.004
7.008
±
0.079
0.512
±
0.039
2.142
±
0.039
SYMBOL
(mm)
E
F
P
P
0
P
1
W
W
1
8.00
+
0.30 /
–
0.10
1.75
±
0.10
3.50
±
0.10
4.00
±
0.10
4.00
±
0.10
2.00
±
0.10
12.30
±
1.00
(inch)
0.069
±
0.004
0.138
±
0.004
0.157
±
0.004
0.157
±
0.004
0.079
±
0.004
0.315
+
0.012 /
–
0.004
0.484
±
0.039
REV:B
Page 6
SP-JTR34
Comchip Technology CO., LTD.
MOSFET
Marking Code
Marking Code
3415
Part Number
CMS3415-HF
3415 X
3415 XX
X / XX = Control code
Suggested
P
.
C.B. PAD Layout
E
SOT-23
SIZE
(mm)
(inch)
A
A
B
C
0.80
0.031
1.90
2.02
0.075
0.080
C D
D
E
2.82
0.60
0.111
0.024
B
Standard Packaging
REEL PACK
Case Type
SOT-23
REEL
Reel Size
(pcs)
(inch)
3,000
7
REV:B
Page 7
SP-JTR34
Comchip Technology CO., LTD.
