Comchip-CMSN1012H3-HF
| Part # | Comchip-CMSN1012H3-HF |
Download  | Comchip-CMSN1012H3-HF |
MOSFET
CMSN1012H3-HF
N-Channel
RoHS Device
Halogen Free
SOT-523
G : Gate
S : Source
D : Drain
BV
DSS
20V
0.067(1.70)
0.059(1.50)
I
D
560mA
3
R
DSON
@
V
GS
=
4.5
V
,I
D
=
600mA
Ω
320m
(
typ)
(
typ)
(
typ)
0.014(0.35)
0.010(0.25)
0.035(0.90)
0.028(0.70)
R
DSON
@
V
GS
=
2.5
V
,I
D
=
400mA
Ω
510m
1
2
R
DSON
@
V
GS
Ω
980m
D
=
350mA
=
1.8
V
,I
0.020(0.50)TY
P
.
0.043(1.10)
0.035(0.90)
Features
–
Simple drive requirement
–
Small package outline
0.008(0.20)
0.004(0.10)
0.069(1.75)
0.057(1.45)
–
Pb-free lead plating and halogen-free package
0.018(0.46)
0.010(0.26)
Circuit Diagram
0.031(0.80)
0.028(0.70)
G
1
2
0.004(0.10) max
3
D
0.010(0.25)
0.006(0.15)
S
Dimensions in inches and (millimeter)
Maximum Rating
(at Ta=25°C unless otherwise noted)
Parameter
Drain-Source
V
o
ltag
Gate-Source
V
o
ltage
°
Continuous Drain Current @
T
A
=
85 C, V
GS
=
4.5
V
(
Note 3)
Pulsed Drain Current
(
Notes 1, 2)
Symbol
V
DS
V
GS
Limits
20
±
8
560
400
2.5
Unit
V
Continuous Drain Current @ T
A
=
25 C, V
GS
=
4.5
V
(
Note 3)
I
D
mA
A
°
I
DM
T
A
=
2
5
℃
T
A
=
8
5
℃
150
Maximum
Power Dissipation
P
D
mW
(
Note 3)
80
ESD susceptibility
Operating Junction and Storage
T
e
mperature
2000
(
Note 4)
-55~+150
V
Tj,
T
s
tg
°
C
Note : 1. Pulse width limited by maximum junction temperature.
μ
≤
2. Pulse width
300 s,
duty
cy
cle
≤
2%.
3. Surface mounted on FR-4 board.
3. Human body model, 1.5k
Ω
in series with
100pF
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
SP-JTR07
Comchip Technology CO., LTD.
MOSFET
Electrical Characteristics
(at T
A
=25°C unless otherwise noted)
Symbol
Static
BV
DSS
Min.
Typ.
Max.
Unit
Test Conditions
μ
20
–
0.5
–
–
–
–
–
–
–
–
0.02
0.92
–
–
–
320
510
980
1
–
–
V
V/°C
V
V
GS
=0,I
D
=250 A
°
Tj
∆BV
DSS
/∆
V
GS(th)
I
GSS
Reference to 25 C,I
D
=1mA
V
DS
=V
GS
,I
D
=250μA
1.2
±
±
10
V
GS
= 8
V
,
V
DS
=0
μA
1
10
450
700
1200
–
V
DS
=20
V
,
V
G
S
=0
I
DSS
°
V
DS
=16
V
,
V
GS
=0 (Tj=70
C)
V
G
S
=4.5
V
,
I
D
=600mA
V
GS
=2.5
V
,
I
D
=500mA
V
GS
=1.8
V
,
I
D
=350mA
V
DS
=10
V
,
I
D
=400mA
*R
DS(ON)
*G
FS
mΩ
S
Dynamic
Ciss
–
–
–
–
–
–
–
–
–
–
60
14
–
–
–
–
–
–
–
–
–
–
pF
ns
V
D
S
=10
V
, V
G
S
=0, f=1MHz
Coss
Crss
9
t
d(ON)
5
5
24
18
0.76
0.074
0.27
V
D
S
=10
V
, I
D
=200mA, V
=4.5V
GS
t
r
Ω
R
G
=10
t
d(OFF)
t
f
Qg
nC
V
V
D
S
=10
V
, I
D
=250mA, V
=4.5V
Qgs
Qgd
GS
Source-Drain Diode
*
V
SD
–
0.8
1.2
V
GS
=0
V
, I
S
=150mA
*Pulse Test : Pulse Width
≤
30
0
μ
s, Duty Cycle
2%.
≤
Thermal Performance
Parameter
Symbol
Rth,ja
Limit
833
U
nit
Thermal Resistance, Junction-to-Ambient(PCB mounted)
°C/W
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
SP-JTR07
Comchip Technology CO., LTD.
MOSFET
Typical Characteristics
Brekdown Voltage v
s
A
mbient Temperature
Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.4
1.2
1
5V, 4.5V, 4V, 3.5V
V
GS
=3V
μ
I
D
=250 A,
V
GS
=0V
V
GS
=2.5V
V
GS
=2V
0.8
0.6
V
GS
=1V
3
V
GS
=1.5V
4
-75 -50 -25
0
25 50 75
100 125 150 175
0
1
2
5
V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1600
1400
1200
1000
800
600
400
200
0
1
V
GS
=0V
Tj=25°C
0.8
V
GS
=1.8V
V
GS
=2.5V
0.6
0.4
0.2
0
Tj=150°C
V
GS
=4.5V
0
0.2
0.4
0.6
0.8
1
0.1 0.2
0.3 0.4
0.5 0.6
0.7 0.8
0.9
1
I
D
, Drain Current(A)
I
DR
, Reverse Drain Curren
t
(
A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
900
800
700
600
500
400
300
200
100
0
1.6
1.4
1.2
1
V
GS
=4.5V, I
D
=600mA
I
D
=600mA
I
D
=350mA
V
GS
=1.8V, I
D
=350mA
V
GS
=2.5V, I
D
=400mA
0.8
0.6
-60
-20
20
60
100
140
180
0
2
4
6
8
10
V
GS
, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
SP-JTR07
Comchip Technology CO., LTD.
MOSFET
Typical Characteristics(Cont.)
Threshold Voltage v
s
J
unction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
1.4
1.2
1
100
Ciss
μ
I
D
=250 A
C
oss
10
Crss
0.8
0.6
0.4
1
-60 -40 -20
0
20 40 60 80
100 120 140 160
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
100
100
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Gate Charge Characteristics
10
10
T
J
(
M
A
X
)
=150°C
T
A
=25°C
8
6
4
2
0
8
6
4
2
0
θJA
R
=833°C/W
V
DS
=10V
I
D
=250mA
0
0.5
1
1.5
2
0.001
0.01
0.1
1
10
Pulse Width(s)
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
10
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
μ
100 s
1ms
0.1
10ms
100m
DC
T
A
=25°C, Tj=150°C,
0.01
0.001
θ
V
GS
=4.5V, R
JA
=833°C/W
Single Pulse
θJA
T
A
=25°C, V
GS
=4.5V, R
=833°C/W
0.01
0.1
1
10
25
50
75
100
125
150
175
V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 4
SP-JTR07
Comchip Technology CO., LTD.
MOSFET
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.2
0.15
0.1
6
V
DS
=5V
Mounted on FR-4 board
5
4
3
2
1
0
0.05
0
0
20
40
60
80 100
120 140 160
0
1
2
3
4
5
6
V
GS
, Gate-Source Voltage(V)
T
A
, Ambient Temperature(℃)
Forward Transfer Admittance vs Drain Current
10
1
V
DS
=5V
V
DS
=10V
0.1
0.01
Ta=25°C
Pulsed
0.001
0.01
0.1
1
I
D
, Drain Current(A)
Transient Thermal Response Curves
1
D=0.5
0.2
JA
1.R (t)=r(t)*R
θ
θ
J
A
0.1
0.1
2.Duty Factor, D=t
1
/t
2
0.05
3.T
JM
-T
A
=P
DM
*Z
JA
(t)
θ
=833
4.R
°C/W
θ
J
A
0.02
0.01
0.01
Single Pulse
1.E-02
0.001
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t
1
, Square Wave Pulse Duration(s)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 5
SP-JTR07
Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
P0
P1
T
W
C
A
P
D
2
D
1
D
W
1
SYMBOL
A
B
C
d
D
D
1
D
2
SOT-523
SOT-523
(mm)
1.85
±
0.05
0.073
±
0.002
1.85
±
0.05
0.073
±
0.002
0.875
±
0.05
1.50
±
0.10
178
±
2.00
54.40
±
1.00
13.00
±
1.00
(inch)
0.034
±
0.002
0.059
±
0.004
7.008
±
0.079
0.512
±
0.039
2.142
±
0.039
SYMBOL
(mm)
E
F
P
P
0
P
1
W
W
1
1.75
±
0.10
0.069
±
0.004
3.50
±
0.10
0.138
±
0.004
4.00
±
0.10
0.157
±
0.004
4.00
±
0.10
2.00
±
0.10
8.00
+
0.30 /
–
0.10
0.079
±
0.004
0.315
0.012 /
0.004
12.30
±
1.00
(inch)
0.157
±
0.004
+
–
0.484
±
0.039
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 6
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Comchip Technology CO., LTD.
MOSFET
Marking Code
3
Marking Code
QT
Part Number
QT
CMSN1012H3-HF
1
2
Suggested PAD Layout
SOT-523
SIZE
B
(mm)
0.60
0.50
0.40
1.00
1.24
1.84
(inch)
0.024
0.020
0.016
0.039
0.049
0.072
A
B
C
D
E
F
A
C
E
F
D
Standard Packaging
REEL PACK
Case Type
REEL
( pcs )
Reel Size
(inch)
3,000
SOT-523
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 7
SP-JTR07
Comchip Technology CO., LTD.
