Comchip-FMMT619-G
| Part # | Comchip-FMMT619-G |
Download  | Comchip-FMMT619-G |
General Purpose Transistor
FMMT619-G
(NPN)
RoHS Device
Features
-Low Saturation Voltage.
SOT-23
0.118(3.00)
0.110(2.80)
3
0.055(1.40)
0.047(1.20)
Diagram:
1
2
Collector
3
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
1
0.041(1.05)
0.035(0.90)
Base
0.100(2.55)
0.089(2.25)
2
Emitter
0.004(0.10) max
0.020(0.50)
0.020(0.50)
0.012(0.30)
0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings
(at T
A
=25°C unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
Units
V
Collector-Base voltage
50
50
Collector-Emitter voltage
Emitter-Base voltage
V
5.0
V
Collector current-continuous
2
A
Power dissipation
P
C
350
mW
°C/W
mW
°C/W
°C
Thermal resistance from junction to ambient
Maximum power dissipation (Note 1)
Thermal resistance from junction to ambient (Note 1)
Junction temperature
R
θ
JA
P
CM
357
625
R
θ
JA
T
J
200
150
Storage temperature range
T
STG
-55 to +150
°C
Notes:
1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15*15*0.6mm.
Company reserves the right to improve product design , functions and reliability without notice.
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General Purpose Transistor
Electrical Characteristics
(at T
A
=25°C unless otherwise noted)
Symbol
Typ.
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage (Note 1)
Emitter-Base breakdown voltage
Collector cut-off current
Conditions
Min.
Max.
Units
–
–
–
–
–
–
–
–
–
–
–
–
I
C
=100
μ
A, I
E
=0
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
50
50
5
V
V
I
C
=10mA, I
B
=0
I
E
=100
μ
A, I
C
=0
V
CB
=40
V
,
I
E
=0
V
I
CBO
I
EBO
100
nA
nA
–
V
EB
=4
V
,
I
C
=0
Emitter cut-off current
100
–
h
FE(1)
V
CE
=2
V
,
I
C
=10mA
V
CE
=2
V
,
I
C
=0.2A
V
CE
=2
V
,
I
C
=1A
V
CE
=2
V
,
I
C
=2A
V
CE
=2
V
,
I
C
=6A
I
C
=0.1A, I
B
=10mA
I
C
=1A, I
B
=10mA
I
C
=2A, I
B
=100mA
I
C
=2A, I
B
=50mA
I
C
=2A, V
CE
=2V
V
CB
=10
V
,
f
=1MHz
200
300
200
–
–
–
–
h
FE(2)
DC current gain (Note 1)
h
FE(3)
h
FE(4)
100
–
h
FE(5)
40
–
–
–
–
–
–
–
–
–
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)
V
BE(on)
20
200
220
1
mV
mV
mV
V
Collector-Emitter saturation voltage
(Note 1)
–
–
–
–
–
Base-Emitter saturation voltage (Note 1)
Base-Emitter on voltage (Note 1)
Output capacitance
1
V
pF
C
ob
t
(on)
t
(off)
20
–
Turn-on time
170
750
nS
nS
V
CC
=10
V
,
I
C
=1A
I
B1
=-I
B2
=10mA
–
–
Turn-off time
V
CE
=10
V
,
I
C
=50mA
f=100MHz
–
Transition frequency
f
T
100
MHz
Notes:
1. Pulse test
:
Pulse Width
≤
300μs, Duty Cycle
≤
2.0%.
Company reserves the right to improve product design , functions and reliability without notice.
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General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (FMMT619-G)
Fig.1 – Static Characteristic
Fig.2 – h
FE —
I
C
500
400
300
200
100
0
1200
1000
800
600
400
200
0
COMMON
EMITTER
T
a
=25
°C
V
CE
=2V
0.5
m
A
0.45
m
A
T
a
=100°C
T
a
=25°C
0.4
m
A
0.35
m
A
0.3
m
A
0.25
m
A
0.2
m
A
0.15
m
A
0.1
m
A
I
B
=0.05
m
A
1
10
100
1000 2000
0
1
2
3
4
5
6
Collector-Emitter Voltage, V
CE
(V)
Collector Current, Ic (mA)
Fig.3 – V
BEsat —
I
C
Fig.4 – V
CEsat —
I
C
1000
800
600
400
200
0
400
300
200
100
0
β
= 40
β
= 20
T
a
= 25°C
T
a
=100°C
T
a
=100°C
T
a
= 25°C
1
10
100
1000 2000
1
10
100
1000 2000
Collector Current, Ic (mA)
Collector Current, Ic (mA)
Fig.5 –
F
T
— I
C
Fig.6 – C
ob
/C
ib
— V
CB
/V
EB
200
150
1000
100
10
f=1MHZ
I
E
=0/I
C
=0
T
a
=25°C
C
ib
100
50
C
ob
V
CE
=10V
T
a
= 25°C
0
0
0.1
20
Collector Current, I
C
(mA)
0
40
60
80
100
1
10
20
Reverse Voltge, V (V)
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Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (FMMT619-G)
Fig.7 – V
BE
—
I
C
Fig.8 – P
C —
T
a
2000
1600
1200
800
400
0
500
400
300
200
100
0
V
CE
=2V
T
a
=100°C
T
a
= 25°C
200
400
600
800
1000
0
25
50
75
100
125
150
Base – Emitter Voltage, V
BE
(mV)
Ambient
T
e
mperature,
T
a
(
°C)
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General Purpose Transistor
Reel Taping Specification
P0
P1
T
W
C
A
P
1
2
0
o
D
2
D
1
D
W
1
SYMBOL
(mm)
A
B
C
d
D
D
1
D
2
SOT-23
SOT-23
3.15
±
0.10
2.77
±
0.10
1.22
±
0.10
1.50 ± 0.10
178.00
±
2.00
54.40
±
1.00
13.00
±
1.00
(inch)
0.124
±
0.004
0.109
±
0.004
0.048
±
0.004
0.059 ± 0.004
7.087
±
0.079
2.142
±
0.039
0.512
±
0.039
SYMBOL
(mm)
E
F
P
P
0
P
1
W
W
1
8.00
+
0.30 /
–
0.10
1.75
±
0.10
3.50
±
0.10
4.00
±
0.10
4.00
±
0.10
2.00
±
0.10
12.30
±
1.00
(inch)
0.315
+
0.012 /
–
0.004
0.069
±
0.004
0.138
±
0.004
0.157
±
0.004
0.157
±
0.004
0.079
±
0.004
0.484
±
0.039
Company reserves the right to improve product design , functions and reliability without notice.
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General Purpose Transistor
Marking Code
3
Marking Code
619
Part Number
FMMT619-G
XXX
1
2
xx = Product type marking code
Suggested PAD Layout
B
SOT-23
SIZE
(mm)
(inch)
A
A
B
C
0.80
0.031
D
0.60
1.90
0.024
0.075
D
2.02
0.080
C
Note:
1.General tolerance: ±0.05mm.
2.The pad layout is for reference purposes only.
Standard Packaging
REEL PACK
Case Type
REEL
Reel Size
( pcs )
(inch)
3,000
SOT-23
7
Company reserves the right to improve product design , functions and reliability without notice.
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