Convert-Semiconductor-CSP08N6P5

CSP08N6P5  

80V N-Channel Split Gate MOSFET  

FEATURES  

l

Trench Power MOSFET Technology  

l

Low R

DS(ON)  

l

Low Gate Charge  

l

Optimized For Fast-switching Applications  

APPLICATIONS  

l

DC/DC Converter  

l

Ideal for high-frequency switching and  

synchronous rectification  

Device Marking and Package Information  

Device  

Package  

Marking  

CSP08N6P5  

TO-220  

CSP08N6P5  

Absolute Maximum Ratings

at T

j

= 25ºC

 

unless otherwise noted  

Parameter  

Drain-Source Voltage (V

GS

= 0V)  

Continuous Drain Current

 

T

C

= 25ºC  

Continuous Drain Current

 

T

C

= 100ºC  

Pulsed Drain Current  

Symbol  

Value  

80  

Unit  

V

V

DSS  

(note1)  

(note1)  

(note2)  

130  

A

I

D  

100  

A

I

DM  

V

GSS  

E

AS  

280  

A

Gate Source Voltage  

±

20  

100  

V

Single Pulse Avalanche Energy  

Power Dissipation

 

T

C

= 25ºC  

(note3)  

(note4)  

mJ  

W

ºC  

P

D  

56  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55~+175  

Thermal Characteristics  

Parameter  

Symbol  

Value  

0.4  

Unit  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

R

θJ  

C

ºC/W  

62.5  

R

θJ  

A

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CSP08N6P5  

Electrical Characteristics

T

j

= 25ºC

 

unless otherwise specified  

Value  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Typ.  

Max.  

Static  

Drain-Source Breakdown Voltage  

V

(BR)DSS  

V

GS

= 0V, I

D

= 250µA  

80  

—  

—  

—  

—  

1

V

V

DS

= 64V, V

GS

= 0V, T

J

= 25ºC  

uA  

Zero Gate Voltage Drain Current  

I

DSS  

V

DS

= 64V, V

GS

= 0V, T

J

= 100ºC  

V

GS

=

±

20V  

—  

—  

—  

—  

5

±

100  

2.5  

uA  

nA  

V

Gate-Source Leakage  

I

GSS  

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 30A  

V

GS

= 4.5V, I

D

= 20A  

Dynamic  

1.2  

—  

—  

4.5  

6.5  

6.5  

mΩ  

mΩ  

Drain-Source On-Resistance

 

(note2)  

R

DS(on)  

—  

8.5  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

2900  

420  

40  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 40V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge

（

4.5V

）  

Gate-Source Charge  

Gate-Drain Charge  

pF  

nC  

40  

V

DS

= 40V, I

D

= 15A,  

V

GS

= 10V  

Q

gs  

Q

gd  

t

d(on)  

t

r  

7.2  

6.5  

8.3  

4.2  

36  

Turn-on Delay Time  

Turn-on Rise Time  

V

DS

= 40

V

,

I

D

= 15A  

,R

G

= 3Ω  

ns  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

6.9  

Body Diode Characteristics  

Source-Drain Current(Body Diode)  

I

S  

I

SDM  

V

SD  

t

rr  

—  

—  

130  

280  

1.2  

—  

A

—  

—  

—  

—  

Pulsed Source-Drain Current(Body  

Diode)  

Body Diode Voltage  

T

J

= 25ºC, I

SD

= 1A, V

GS

= 0V  

—  

V

Reverse Recovery Time  

Reverse Recovery Charge  

27  

89  

nS  

nc  

TJ=25

℃

I

F

=15A,  

di/dt=100A/μs  

Q

rr  

—  

—  

Notes  

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  

2. The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%  

3. The EAS data shows Max. rating . The test condition is VDD =25V,VGS =10V,L=0.1mH  

4. The power dissipation is limited by 175

℃

junction temperature  

5. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  

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CSP08N6P5  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

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V3.4  

CSP08N6P5  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

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V3.4  

CSP08N6P5  

Figure A

：

Gate Charge Test Circuit and Waveform  

Figure B

：

Resistive Switching Test Circuit and Waveform  

Figure C

：

Unclamped Inductive Switching Test Circuit and Waveform  

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CSP08N6P5  

TO-220  

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CSP08N6P5  

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