Convert-Semiconductor-CTD02N007

nvert  

CTD02N007  

Suzho

u Convert Semiconductor Co., Ltd.  

20V N-Channel Trench MOSFET  

FE

A

T

URES  

⚫

Super Low Gate Charge  

⚫

100% EAS Guaranteed  

⚫

RoHS compliant  

⚫

Green Device Available  

⚫

Excellent CdV/dt effect decline  

⚫

Advanced high cell density Trench technology  

APPLIC

A

T

IONS  

⚫

Load Switch  

⚫

Hard switched and high frequency circuits  

⚫

Uninterruptible Power Supply (UPS)  

Device Marking and Package Information  

Device  

Package  

Marking  

CTD02N007  

TO-252  

CTD02N007  

Absolute Maximum Ratings

at T

j

= 25ºC

 

unless otherwise noted  

Parameter  

Drain-Source Voltage (V

GS

= 0V)  

Continuous Drain Current

 

T

C

= 25ºC  

Continuous Drain Current

 

T

C

= 100ºC  

Pulsed Drain Current  

Symbol  

Value  

20  

Unit  

V

V

DSS  

(note1)  

(note1)  

(note2)  

30  

A

I

D  

24  

A

I

DM  

V

GSS  

E

AS  

120  

A

Gate Source Voltage  

V

±

12  

15  

Single Pulse Avalanche Energy  

Power Dissipation

 

T

C

= 25ºC  

(note3)  

(note4)  

mJ  

W

ºC  

P

D  

38  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55~+175  

Thermal Characteristics  

Parameter  

Symbol  

R

θJ  

Value  

Unit  

Thermal Resistance, Junction-Case  

(note1)  

3.9  

ºC /W  

C

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Electrical Characteristics

T

j

= 25ºC

 

unless otherwise specified  

Value  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Typ.  

Max.  

Static  

Drain-Source Breakdown Voltage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  

V

DS

= 20V, V

GS

= 0V, T

J

= 25ºC  

V

DS

= 20V, V

GS

= 0V, T

J

= 100ºC  

V

GS

=

±

12V  

20  

—  

—  

—  

—  

V

uA  

uA  

nA  

V

1

Zero Gate Voltage Drain Current  

—  

—  

5

±

100  

1

Gate-Source Leakage  

I

GSS  

—  

—  

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 4.5V, I

D

= 15A  

V

GS

= 2.5V, I

D

= 10A  

Dynamic  

0.5  

—  

—  

5.1  

6.5  

7

mΩ  

mΩ  

Drain-Source On-Resistance

 

(note2)  

R

DS

(on)  

—  

10  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Rg  

Q

g  

1216  

196  

186  

1.3  

39  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 15V,  

f = 1.0MHz  

Output Capacitance  

pF  

Reverse Transfer Capacitance  

Internal Gate Resistance  

Total Gate Charge

（

10V

）  

Total Gate Charge

（

4.5V

）  

Gate-Source Charge  

Gate-Drain Charge  

Ω

Q

g  

28  

V

DD

= 16V, I

D

= 15A,  

V

GS

= 4.5V  

Q

gs  

Q

gd  

t

d(on)  

t

r  

13  

nC  

ns  

12  

Turn-on Delay Time  

34  

Turn-on Rise Time  

6

V

DS

= 10V, ID=30A,  

V

GS

= 10V,R

G

= 25

Ω  

Turn-off Delay Time  

t

d(off)  

t

f  

227  

98  

Turn-off Fall Time  

Body Diode Characteristics  

T

C

= 25 ºC  

Continuous Body Diode Current  

I

S  

—  

—  

—  

—  

—  

—  

—  

30  

120  

1.4  

—  

A

A

Pulsed Diode Forward Current  

Body Diode Voltage  

I

SM  

V

SD  

t

rr  

T

J

= 25ºC, I

SD

= 1A, V

GS

= 0V  

—  

V

Reverse Recovery Time  

25  

13  

nS  

nC  

TJ=25

℃

I

F

=30A,  

di/dt=100A/

μ

s  

Reverse Recovery Charge  

Q

rr  

—  

Notes  

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  

2. The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%  

3. The EAS data shows Max. rating . The test condition is VDD =15V,VGS =10V,L=0.1mH  

4. The power dissipation is limited by 175

℃

junction temperature  

5. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

V

SD,

Source to Drain Voltage(V)  

V

SD,

Source to Drain Voltage(V)  

Fig.3 Forward Characteristics

 

of Reverse Diode  

Fig.4 Gate-Charge Characteristics  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

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Figure A

：

Gate Charge Test Circuit and Waveform  

Figure B

：

Resistive Switching Test Circuit and Waveform  

Figure C

：

Unclamped Inductive Switching Test Circuit and Waveform  

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CTD02N007  

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TO-252  

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CTD02N007  

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technology disclosed

 

hereunder.  

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