Convert-Semiconductor-CTD03P030

nvert  

CTD03P030  

Suzho

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30V P-Channel Trench MOSFET  

FE

A

T

URES  

⚫

Super Low Gate Charge  

⚫

100% EAS Guaranteed  

⚫

RoHS compliant  

⚫

Green Device Available  

⚫

Excellent CdV/dt effect decline  

⚫

Advanced high cell density Trench technology  

APPLIC

A

T

IONS  

⚫

DC/DC converter  

⚫

High side switch for full bridge convert  

Device Marking and Package Information  

Device  

Package  

Marking  

CTD03P030  

TO-252  

CTD03P030  

Absolute Maximum Ratings

at T

j

= 25ºC

 

unless otherwise noted  

Parameter  

Drain-Source Voltage (V

GS

= 0V)  

Drain Current-Continuous(Tc =25

℃

)  

Drain Current-Continuous(Tc =100

℃

)  

Pulsed Drain Current  

Symbol  

Value  

-30  

Unit  

V

DSS  

V

(note1)  

(note1)  

(note2)  

-35  

I

D  

A

-20  

I

DM  

V

GSS  

E

AS  

-54  

A

V

Gate Source Voltage  

±

20  

45  

Single Pulse Avalanche Energy  

Power Dissipation

 

T

C

= 25ºC  

(note3)  

(note4)  

mJ  

W

ºC  

P

D  

31  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55~+150  

Thermal Characteristics  

Parameter  

Symbol  

Value  

4

Unit  

℃

/W  

℃

/W  

Thermal Resistance,Junction-Case  

Thermal Resistance Junction-Ambient  

(note1)  

(note1)  

R

θJ  

C

62  

R

θJA  

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Electrical Characteristics

T

j

= 25ºC

 

unless otherwise specified  

Value  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Typ.  

Max.  

Static  

Drain-Source Breakdown Voltage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= -250µA  

-30  

—  

—  

—  

—  

V

Zero Gate Voltage Drain Current  

Zero Gate Voltage Drain Current  

V

DS

= -30V, V

GS

= 0V, T

J

= 25ºC  

-1  

uA  

I

DSS  

V

DS

= -30V, V

GS

= 0V, T

J

= 55ºC  

—  

—  

-5  

Gate-Source Leakage  

I

GSS  

—  

-1.2  

—  

—  

—  

—  

—  

V

GS

=

±

20V  

±

100  

-2.5  

30  

nA  

V

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= -250µA  

V

GS

= -10V, I

D

= -15A  

V

GS

= -4.5V, I

D

= -10A  

mΩ  

mΩ  

Drain-Source On-Resistance

 

(note2)  

R

DS(on)  

—  

55  

Dynamic  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

930  

148  

115  

9.8  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= -15V,  

f = 1.0MHz  

Output Capacitance  

pF  

Reverse Transfer Capacitance  

Total Gate Charge

（

4.5V

）  

Gate-Source Charge  

Gate-Drain Charge  

V

DS

= -12V, I

D

= -18A,  

V

GS

= -4.5V  

Q

gs  

Q

gd  

t

d(on)  

t

r  

2.2  

nC  

3.4  

Turn-on Delay Time  

16.4  

20.2  

55  

V

DS

= -15V, I

D

=-2A  

V

GS

= -10V,R

G

= 3.3

Ω

 

Turn-on Rise Time  

ns  

Turn-off Delay Time  

t

d(off)  

t

f  

Turn-off Fall Time  

10  

Body Diode Characteristics  

Continuous Body Diode Current  

Pulsed Diode Forward Current  

Body Diode Voltage  

I

S  

—  

—  

—  

—  

—  

—  

-35  

-54  

T

C

= 25 ºC  

A

V

I

SM  

V

SD  

T

J

= 25ºC, I

SD

= -1A, V

GS

= 0V  

-1.2  

Notes  

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  

2. The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%  

3. The EAS data shows Max. rating . The test condition is VDD =25V,VGS =10V,L=0.1mH  

4. The power dissipation is limited by 175

℃

junction temperature  

5. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Fig.2 On-Resistance vs. G-S Voltage  

Fig.1 Typical Output Characteristics  

Fig.3 Forward Characteristics

 

of Reverse Diode  

Fig.4 Gate-Charge Characteristics  

Fig.5 Normalized VGS(th) vs. TJ  

Fig.6 Normalized RDSON vs. TJ  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

Fig.9 Normalized Maximum Transient Thermal Impedance  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

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Figure A

：

Gate Charge Test Circuit and Waveform  

Figure B

：

Resistive Switching Test Circuit and Waveform  

Figure C

：

Unclamped Inductive Switching Test Circuit and Waveform  

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CTD03P030  

Suzho

u Convert Semiconductor Co., Ltd.  

TO-252  

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CTD03P030  

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