Convert-Semiconductor-CTD04N5P5

nvert  

CTD04N5P5  

Suzho

u Convert Semiconductor Co., Ltd.  

40V N-Channel Trench MOSFET  

FE

A

T

URES  

⚫

Super Low Gate Charge  

⚫

100% EAS Guaranteed  

⚫

RoHS compliant  

⚫

Green Device Available  

⚫

Excellent CdV/dt effect decline  

⚫

Advanced high cell density Trench technology  

APPLIC

A

T

IONS  

⚫

Switch Mode Power Supply (SMPS)  

⚫

Uninterruptible Power Supply (UPS)  

⚫

Hard switched and high frequency circuits  

Device Marking and Package Information  

Device  

Package  

Marking  

CTD04N5P5  

TO-252  

CTD04N5P5  

Absolute Maximum Ratings

at T

j

= 25ºC

 

unless otherwise noted  

Parameter  

Drain-Source Voltage (V

GS

= 0V)  

Drain Current-Continuous(Tc =25

℃

)  

Drain Current-Continuous(

T

c

=

100

℃

)  

Pulsed Drain Current  

Symbol  

Value  

40  

Unit  

V

DSS  

V

100  

I

D  

A

68  

I

DM  

V

GSS  

E

AS  

320  

A

V

Gate Source Voltage  

±

20  

104  

Single Pulse Avalanche Energy  

Power Dissipation

 

T

C

= 25ºC  

mJ  

W

ºC  

P

D  

136  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55~+175  

Thermal Characteristics  

Parameter  

Symbol  

Value  

Unit  

Thermal Resistance,Junction-to-Case  

1.1  

℃

/W  

R

θJC  

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Electrical Characteristics

T

j

= 25ºC

 

unless otherwise specified  

Value  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Typ.  

Max.  

Static  

Drain-Source Breakdown Voltage  

V

(BR)DSS  

V

GS

= 0V, I

D

= 250µA  

40  

—  

—  

—  

—  

1

V

Zero Gate Voltage Drain Current  

Zero Gate Voltage Drain Current  

V

DS

= 40V, V

GS

= 0V, T

J

= 25ºC  

I

DSS  

uA  

V

DS

= 40V, V

GS

= 0V, T

J

= 55ºC  

—  

—  

5

Gate-Source Leakage  

I

GSS  

—  

1.0  

—  

—  

nA  

V

V

GS

=

±

20V  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 30A  

V

GS

= 4.5V, I

D

= 20A  

Dynamic  

±

100  

3.0  

Gate-Source Threshold Voltage  

V

GS(th)  

1.5  

4.2  

6.5  

5.5  

mΩ  

mΩ  

Drain-Source On-Resistance

 

(note2)  

R

DS(on)  

—  

10  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

3042  

386  

232  

57  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 30V,  

f = 1.0MHz  

Output Capacitance  

pF  

nC  

Reverse Transfer Capacitance  

Total Gate Charge

（

4.5V

）  

Gate-Source Charge  

V

DS

= 20V, I

D

= 20A,  

V

GS

= 10V  

Q

gs  

Q

gd  

t

d(on)  

t

r  

9

Gate-Drain Charge  

11  

Turn-on Delay Time  

8

V

DS

= 20V, V

GS

= 10V,  

Turn-on Rise Time  

18  

R

G

= 3.5

Ω  

ns  

Turn-off Delay Time  

t

d(off)  

t

f  

24  

Turn-off Fall Time  

14  

Body Diode Characteristics  

Source-Drain Current(Body Diode)  

Body Diode Voltage  

I

SD  

V

SD  

t

rr  

—  

0.82  

22  

100  

1.2  

—  

A

V

—  

—  

—  

—  

T

J

= 25ºC, I

SD

= 20A, V

GS

= 0V  

I

F

= 30A  

di

F

/dt = 100A/

μs  

TJ=25

℃  

Reverse Recovery Time  

Reverse Recovery Charge  

ns  

nC  

Q

rr  

11  

—  

Notes  

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  

2. The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%  

3. The EAS data shows Max. rating . The test condition is VDD =25V,VGS =10V,L=0.1mH  

4. The power dissipation is limited by 175

℃

junction temperature  

5. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

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Figure A

：

Gate Charge Test Circuit and Waveform  

Figure B

：

Resistive Switching Test Circuit and Waveform  

Figure C

：

Unclamped Inductive Switching Test Circuit and Waveform  

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CTD04N5P5  

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TO-252  

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hereunder.  

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