Convert-Semiconductor-CTP06N005

nvert  

CTB06N005,CTP06N005  

Suzho

u Convert Semiconductor Co., Ltd.  

68V N-Channel Trench MOSFET  

FE

A

T

URES  

⚫

Trench Power MOSFET Technology  

⚫

Low R

DS(ON)  

⚫

Low Gate Charge  

⚫

Optimized For Fast-switching Applications  

APPLIC

A

T

IONS  

⚫

⚫

DC/DC Converters  

Synchronous Rectification  

Device Marking and Package Information  

Device  

Package  

TO-263  

TO-220  

Marking  

CTB06N005  

CTP06N005  

CTB06N005  

CTP06N005  

Absolute Maximum Ratings

at T

j

= 25ºC

 

unless otherwise noted  

Parameter  

Drain-Source Voltage (V

GS

= 0V)  

Continuous Drain Current

 

T

C

= 25ºC  

Continuous Drain Current

 

T

C

= 100ºC  

Pulsed Drain Current  

Symbol  

Value  

68  

Unit  

V

V

DSS  

135  

A

I

D  

94  

A

I

DM  

V

GSS  

E

AS  

I

AS  

540  

A

(note1)  

(note2)  

Gate Source Voltage  

V

±

20  

290  

Single Pulse Avalanche Energy  

Avalanche Current  

mJ  

A

44  

Power Dissipation

 

T

C

= 25ºC  

Power Dissipation

 

T

C

= 100ºC  

(note3)  

(note3)  

160  

W

W

ºC  

P

D  

80  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55~+175  

Thermal Characteristics  

Parameter  

Symbol  

Value  

0.95  

65  

Unit  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient  

R

θJ  

C

ºC /W  

R

θJ  

A

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Electrical Characteristics

T

j

= 25ºC

 

unless otherwise specified  

Value  

Unit  

Parameter  

Symbol  

Test Conditions  

Min.  

Typ.  

Max.  

Static  

Drain-Source Breakdown Voltage  

V

(BR)DSS  

V

GS

= 0V, I

D

= 250µA  

68  

—  

—  

—  

—  

1

V

V

DS

= 68V, V

GS

= 0V, T

J

= 25ºC  

uA  

Zero Gate Voltage Drain Current  

I

DSS  

V

DS

= 68V, V

GS

= 0V, T

J

= 100ºC  

V

GS

=

±

20V  

—  

—  

—  

—  

25  

±

100  

4

uA  

nA  

V

Gate-Source Leakage  

Gate-Source Threshold Voltage  

Drain-Source On-Resistance

 

(note2)  

Forward Transconductance  

Dynamic  

I

GSS  

V

GS(th)  

R

DS(on)  

gfs  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 30A  

V

DS

= 5V, I

D

= 20A  

2

3

—  

4.2  

—  

5.0  

—  

mΩ  

S

30  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

6646  

443  

396  

114  

26  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 30V,  

f = 1.0MHz  

Output Capacitance  

pF  

nC  

Reverse Transfer Capacitance  

Total Gate Charge  

V

DS

= 30V, I

D

= 30A,  

V

GS

= 10V  

Gate-Source Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Gate-Drain Charge  

34  

Turn-on Delay Time  

17  

Turn-on Rise Time  

11  

V

DD

= 30V, I

D

= 30A  

ns  

,R

G

= 2.5

Ω  

Turn-off Delay Time  

t

d(off)  

t

f  

55  

Turn-off Fall Time  

15  

Body Diode Characteristics  

Source-Drain Current(Body Diode)  

I

SD  

I

SDM  

V

SD  

t

rr  

—  

—  

135  

540  

1.2  

—  

—  

—  

T

C

= 25ºC  

A

Pulsed Source-Drain Current(Body  

Diode)  

Body Diode Voltage  

T

J

= 25ºC, I

SD

= 20A, V

GS

= 0V  

—  

V

—  

—  

—  

Reverse Recovery Time  

Reverse Recovery Charge  

30  

51  

ns  

nC  

I

F

= 20A  

di

F

/dt = 100A/

μs  

Q

rr  

—  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. I

AS

= 30A, V

DD

= 50V,L=0.3mH, R

G

= 25Ω, Starting T

J

= 25

°

C  

3. The

 

power dissipation PD is based on TJ(MAX)=175

°

C, using junction-to-case thermal resistance.  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

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Figure A

：

Gate Charge Test Circuit and Waveform  

Figure B

：

Resistive Switching Test Circuit and Waveform  

Figure C

：

Unclamped Inductive Switching Test Circuit and Waveform  

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TO-263  

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TO-220  

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