Convert-Semiconductor-CTU03N8P5

nvert  

CTU03N8P5  

Suzho

u Convert Semiconductor Co., Ltd.  

30V N-Channel Trench MOSFET  

FE

A

T

URES  

⚫

Super Low Gate Charge  

⚫

100% EAS Guaranteed  

⚫

RoHS compliant  

⚫

Green Device Available  

⚫

Excellent CdV/dt effect decline  

⚫

Advanced high cell density Trench technology  

APPLIC

A

T

IONS  

⚫

Switch Mode Power Supply (SMPS)  

⚫

Uninterruptible Power Supply (UPS)  

⚫

Hard switched and high frequency circuits  

Device Marking and Package Information  

Device  

Package  

Marking  

CTU03N8P5  

TO-251  

CTU03N8P5  

Absolute Maximum Ratings

at T

j

= 25ºC

 

unless otherwise noted  

Parameter  

Drain-Source Voltage (V

GS

= 0V)  

Continuous Drain Current

 

T

C

= 25ºC  

Continuous Drain Current

 

T

C

= 100ºC  

Pulsed Drain Current  

Symbol  

Value  

30  

Unit  

V

V

DSS  

(note1)  

(note1)  

(note2)  

60  

A

I

D  

40  

A

I

DM  

V

GSS  

E

AS  

120  

A

Gate Source Voltage  

V

±

20  

57.8  

41  

Single Pulse Avalanche Energy  

Power Dissipation  

(note3)  

(note4)  

mJ  

W

ºC  

P

D  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55~+175  

Thermal Characteristics  

Parameter  

Symbol  

Value  

3.6  

Unit  

Thermal Resistance, Junction-Case  

Thermal Resistance, Junction-Ambient  

(note1)  

(note1)  

R

θJ  

C

ºC /W  

62  

R

θJ  

A

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Electrical Characteristics

T

j

= 25ºC

 

unless otherwise specified  

Value  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Typ.  

Max.  

Static  

Drain-Source Breakdown Voltage  

V

(BR)DSS  

V

GS

= 0V, I

D

= 250µA  

30  

—  

—  

—  

—  

V

V

DS

= 24V, V

GS

= 0V, T

J

= 25ºC  

V

DS

= 24V, V

GS

= 0V, T

J

= 55ºC  

V

GS

=

±

20V  

1

5

uA  

uA  

nA  

V

Zero Gate Voltage Drain Current  

I

DSS  

—  

—  

—  

—  

Gate-Source Leakage  

I

GSS  

±

100  

2.5  

8.5  

14  

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 30A  

1.2  

—  

—  

7.3  

11  

mΩ  

mΩ  

Drain-Source On-Resistance

 

(note3)  

R

DS(on)  

V

GS

= 4.5V, I

D

= 15A  

—  

Dynamic  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

1317  

163  

131  

12.6  

4.2  

1843  

228  

183  

17.6  

5.9  

7.1  

9.2  

22  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 15V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

V

DD

= 15V, I

D

= 15A,  

V

GS

= 4.5V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

nC  

5.1  

Turn-on Delay Time  

Turn-on Rise Time  

4.6  

12.2  

26.6  

8

V

DS

= 15V, I

D

= 15A  

V

GS

= 10V,R

G

= 3.3

Ω

 

ns  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

53  

16  

Body Diode Characteristics  

Continuous Body Diode Current  

I

S  

—  

—  

60  

—  

—  

T

C

= 25ºC  

A

Pulsed Diode Forward Current  

I

SM  

120  

Body Diode Voltage  

V

SD  

t

rr  

T

J

= 25ºC, I

SD

= 30A, V

GS

= 0V  

—  

1.2  

—  

V

—  

—  

Reverse Recovery Time  

9.2  

ns  

I

F

= 30A  

di

F

/dt = 100A/

μs  

Reverse Recovery Charge  

Q

rr  

2.0  

—  

nC  

—  

Notes  

1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  

2. The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%  

3. The EAS data shows Max. rating . The test condition is VDD =25V,VGS =10V,L=0.1mH  

4. The power dissipation is limited by 175

℃

junction temperature  

5. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

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Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

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Figure A

：

Gate Charge Test Circuit and Waveform  

Figure B

：

Resistive Switching Test Circuit and Waveform  

Figure C

：

Unclamped Inductive Switching Test Circuit and Waveform  

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TO-251  

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