Convert-Semiconductor-CTU20N700

nvert  

Suzho

u Convert Semiconductor Co., Ltd.  

CTU20N700  

200V N-Channel Trench MOSFET  

FE

A

T

URES  

⚫

Super Low Gate Charge  

⚫

100% EAS Guaranteed  

⚫

Green Device Available  

⚫

Excellent CdV/dt effect decline  

⚫

Advanced high cell density Trench technology  

APPLIC

A

T

IONS  

⚫

Power switching application  

⚫

Uninterruptible Power Supply  

⚫

Hard switched and high frequency circuits  

Device Marking and Package Information  

Device  

Package  

Marking  

CTU20N700  

TO-251  

CTU20N700  

Absolute Maximum Ratings

at T

j

= 25ºC

 

unless otherwise noted  

Parameter  

Drain-Source Voltage (V

GS

= 0V)  

Symbol  

Value  

Unit  

V

V

DSS  

200  

Continuous Drain Current

 

T

C

= 25ºC  

Continuous Drain Current

 

T

C

= 100ºC  

Drain Current-Continuous@ Current-Pulsed  

Gate-Source Voltage (VDS=0V)  

(note1)  

(note1)  

(note2)  

2.8  

A

I

D  

1.5  

A

I

DM  

V

GSS  

E

As  

8

±

20  

A

V

Single Pulse Avalanche Energy  

(note3)  

(note4)  

8

mJ  

W

ºC  

Maximum Power Dissipation(Tc=25

℃

)  

P

D  

42  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55~+175  

Thermal Characteristics  

Parameter  

Symbol  

Value  

3.6  

Unit  

Thermal Resistance, Junction-to-Case  

R

θJ  

C

ºC /W  

Thermal Resistance, Junction-to-Ambient  

(note1)  

62  

R

θJ  

A

Suzhou Convert SemiConductor Co.,Ltd.  

1

V1.0  

nvert  

Suzho

u Convert Semiconductor Co., Ltd.  

CTU20N700  

Electrical Characteristics

T

j

= 25ºC

 

unless otherwise specified  

Value  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Typ.  

Max.  

Static  

Drain-Source Breakdown Voltage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  

V

DS

= 200V, V

GS

= 0V, T

J

= 25ºC  

V

DS

= 200V, V

GS

= 0V, T

J

= 55ºC  

V

GS

=

±

20V  

200  

—  

—  

1

V

—  

—  

—  

—  

Zero Gate Voltage Drain Current  

uA  

—  

5

Gate-Source Leakage  

I

GSS  

—  

nA  

V

±

100  

3.0  

700  

900  

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 1A  

1.0  

—  

2.0  

560  

650  

m

Ω

 

Ω

Drain-Source On-Resistance  

R

DS(on)  

V

GS

= 4.5V, I

D

= 1A  

—  

Dynamic  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

900  

130  

4.6  

15  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 25V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

nC  

V

DS

= 160V, I

D

= 1A,  

V

GS

= 10V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

3

5.2  

22  

Turn-on Delay Time  

Turn-on Rise Time  

V

DS

= 100V, I

D

= 1A,  

34  

ns  

R

G

= 3

Ω,

V

GS

=10V,  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

45  

11  

Body Diode Characteristics  

Continuous Body Diode Current  

I

S  

—  

—  

—  

—  

—  

—  

2.8  

8

A

V

Pulsed Diode Forward Current  

Body Diode Voltage  

I

SM  

V

SD  

T

J

= 25ºC, I

SD

= 1A, V

GS

= 0V  

1.2  

I

F

= 1A  

di

F

/dt = 100A/

μs  

TJ=25

℃  

Reverse Recovery Time  

Reverse Recovery Charge  

t

rr  

85  

—  

—  

ns  

—  

—  

Q

rr  

257  

nC  

Notes  

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.  

2.The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%  

3.The EAS data shows Max. rating . The test condition is VDD =25V,VGS =10V,L=0.1mH  

4.The power dissipation is limited by 175

℃

junction temperature  

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.  

Suzhou Convert SemiConductor Co.,Ltd.  

2

V1.0  

nvert  

Suzho

u Convert Semiconductor Co., Ltd.  

CTU20N700  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Fig.1 Typical Output Characteristics  

Fig.2 On-Resistance vs. G-S Voltage  

Fig.3 Forward Characteristics of ReverseDiode  

Fig.4 Gate-Charge Characteristics  

Fig.5 Normalized VGS(th)vs. TJ  

Fig.6 Normalized RDSONvs. TJ  

Suzhou Convert SemiConductor Co.,Ltd.  

V1.0  

nvert  

Suzho

u Convert Semiconductor Co., Ltd.  

CTU20N700  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Fig.8 Safe Operating Area  

Fig.7 Capacitance  

Fig.9 Normalized Maximum Transient Thermal Impedance  

Suzhou Convert SemiConductor Co.,Ltd.  

4

V1.0  

nvert  

Suzho

u Convert Semiconductor Co., Ltd.  

CTU20N700  

Figure A

：

Gate Charge Test Circuit and Waveform  

Figure B

：

Resistive Switching Test Circuit and Waveform  

Figure C

：

Unclamped Inductive Switching Test Circuit and Waveform  

Suzhou Convert SemiConductor Co.,Ltd.  

V1.0  

nvert  

Suzho

u Convert Semiconductor Co., Ltd.  

CTU20N700  

TO-251  

Suzhou Convert SemiConductor Co.,Ltd.  

6

V1.0  

nvert  

Suzho

u Convert Semiconductor Co., Ltd.  

CTU20N700  

Disclaimer  

All product specifications and data are subject to change without notice.  

For documents and material available from this datasheet, Suzhou Convert does not warrant or  

assume any legal liability or responsibility for the accuracy, completeness of any product or  

technology disclosed

 

hereunder.  

No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted  

by this document or by any conduct of Suzhou Convert.  

The products shown herein are not designed for use in medical, life-saving, or life-sustaining  

applications unless. Customers using or selling Suzhou Convert products not expressly indicated for  

use in such applications do so entirely at their own risk and agree to fully indemnify Suzhou Convert  

for any damages arising or resulting from such use or sale.  

Suzhou Convert disclaims any and all liability arising out of the use or application of any product  

described herein or of any information provided herein to the maximum extent permitted by law. The  

product specifications do not expand or otherwise modify Suzhou

Convert’s

terms and conditions of  

purchase, including but not limited to the warranty expressed therein, which apply to these products.  

Suzhou Convert SemiConductor CO., Ltd. strives to supply high-quality high-reliability products.  

However, any and all semiconductor products fail with some probability. It is possible that these  

probabilistic failures could give rise to accidents or events that could endanger human lives that could  

give rise to smoke or fire, or that could cause damage to other property. When designing equipment,  

adopt safety measures so that these kinds of accidents or events cannot occur. Such measures  

include but are not limited to protective circuits and error prevention circuits for safe design, redundant  

design, and structural design.  

In the event that any or all Suzhou Convert products(including technical data, services) described or  

contained herein are controlled under any of applicable local export control laws and regulations, such  

products must not be exported without obtaining the export license from the authorities concerned in  

accordance with the above law.  

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not  

guaranteed for volume production. Suzhou Convert believes information herein is accurate and  

reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual  

property rights or other rights of third parties.  

Suzhou Convert SemiConductor Co.,Ltd.  

7

V1.0