CRMICRO-CR4N65FA9K
| Part # | CRMICRO-CR4N65FA9K |
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Silicon N-Channel Power MOSFET
CR4N65F A9K
General Description
：
V
DSS
650
4
V
A
CR4N65F A9K, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220
F
, which accords with the RoHS standard.
Features
：
I
D
P
D
(T
C
=25
℃
)
R
DS(ON)Typ
30
2.4
W
Ω
l
Fast Switching
l
Low ON Resistance
l
Low Gate Charge
l
Low Reverse transfer capacitances
l
100% Single Pulse avalanche energy
T
e
st
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（
Tc= 25
℃
unless otherwise specified
）
：
Parameter
Symbol
V
DSS
Rating
Units
Drain-to-Source
V
o
ltage
650
V
A
Continuous Drain Current
4
I
D
Continuous Drain Current T
C
= 100
°
C
Pulsed Drain Current
2.5
A
a1
16
A
I
DM
Gate-to-Source
V
o
ltage
V
GS
V
±
30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
200
mJ
V/ns
W
E
AS
a3
5.0
dv/dt
30
0.24
P
D
Derating Factor above 25
°
C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
W/
℃
℃
T
J
，
T
stg
150
，
–
55 to 150
300
T
L
℃
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CR4N65F A9K
Electrical Characteristics
（
T
J
= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Typ.
—
Unit
s
Parameter
Test Conditions
Symbol
Min.
650
—
Max.
—
V
GS
=0
V
,
I
D
=250
µ
A
Drain to Source Breakdown
V
o
ltage
Bvdss Temperature Coefficient
V
V
DSS
ID=250uA,Reference2
5
℃
0.69
—
V/
℃
µ
A
Δ
BV
DSS
/
Δ
T
J
V
DS
=650
V
,
V
GS
= 0
V
,
T
J
= 25
℃
V
DS
=520
V
,
V
GS
= 0
V
,
T
J
= 125
℃
—
—
—
—
—
1
Drain to Source Leakage Current
I
DSS
µ
A
nA
nA
—
100
100
-100
V
GS
=+30V
V
GS
=-30V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
I
GSS(F)
I
GSS(R)
—
—
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
—
Typ. Max.
V
GS
=10
V
,
I
D
=2A
Drain-to-Source On-Resistance
Gate Threshold
V
o
ltage
R
DS(ON)
V
GS(TH)
2.4
—
2.8
4.0
Ω
V
DS
= V
GS
, I
D
= 250
µ
A
2.0
V
Pulse width tp
≤
300
µ
s,
δ≤
2%
Dynamic Characteristics
Rating
Typ.
3.5
Parameter
Test Conditions
Symbol
Units
S
Min.
—
Max.
—
V
DS
=15
V
,
I
D
=2A
Forward Transconductance
Input Capacitance
g
fs
C
iss
C
oss
C
rss
—
564
41
—
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Output Capacitance
—
—
pF
Reverse Transfer Capacitance
—
2.4
—
Resistive Switching Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
ns
Min.
—
Typ.
Max.
—
Turn-on Delay Time
Rise Time
t
d(ON)
tr
t
d(OFF)
t
f
13
9
—
—
I
D
=4A V
DD
= 325V
R
G
=10
Ω
Turn-Off Delay Time
Fall Time
—
—
24
—
—
10
Total Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
Q
g
—
15.8
3.0
8.5
—
I
D
=4A V
DD
=520V
V
GS
= 10V
Q
gs
Q
gd
—
—
nC
—
—
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CR4N65F A9K
Source-Drain Diode Characteristics
Rating
Typ.
—
Parameter
Test Conditions
Symbol
Units
Min.
—
Max.
4
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward
V
o
ltage
I
S
A
A
I
SM
V
SD
trr
—
—
16
1.5
—
I
S
=4.0A,V
GS
=0V
—
—
V
Reverse Recovery Time
—
610
2930
9.7
ns
n
C
A
I
S
=4.0A,T
j
= 25
℃
Reverse Recovery Charge
Qrr
I
RRM
—
—
dI
F
/dt=100A/us,
V
GS
=0V
Reverse Recovery Current
—
—
Pulse width tp
≤
300
µ
s,
δ≤
2%
Parameter
Max.
Symbol
Units
Junction-to-Case
R
4.15
62.5
℃
/W
℃
/W
θ
JC
Junction-to-Ambient
R
θ
JA
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
L=10mH, I
D
=6.3A, Start T
J
=25
℃
a3
：
I
SD
=4A,di/dt
≤
100A/us,V
DD
≤
BV
DS,
Start T
J
=25
℃
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CR4N65F A9K
Characteristics Curve
：
Figure.1 Maximum Forward Bias Safe Operating Area
Figure.2 Maximum Power Dissipation vs Case Temperature
Figure.3 Maximum Continuous Drain Current vs Case Temperature
Figure.4 Typical Output Characteristics
Figure.5 Maximum
Effective Thermal Impedance , Junction to Case
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CR4N65F A9K
Figure.6 Typical
Transfer Characteristics
Figure.7 Typical
Body Diode Transfer Characteristics
Figure.8 Typical
Drain to Source ON Resistance
vs Drain Current
Figure.9 Typical
Drian to Source on Resistance
vs Junction Temperature
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CR4N65F A9K
Figure.10 Typical
Theshold
V
o
ltage vs Junction Temperatur
Figure 11 Typical
Breakdown
V
o
ltage vs Junction Temperature
Figure.13 Typical
Gate Charge vs Gate to Source
V
o
ltage
Figure.12 Typical
Capacitance vs Drain to Source
V
o
ltage
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CR4N65F A9K
T
e
st Circuit and Waveform
Figure 14. Gate Charge Test Circuit
Figure 15. Gate Charge
W
a
veforms
Figure 16. Resistive Switching Test Circuit
Figure 17. Resistive Switching Waveforms
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CR4N65F A9K
Figure 18. Diode Reverse Recovery Test Circuit
Figure 19. Diode Reverse Recovery Waveform
Figure20.Unclamped Inductive Switching Test Circuit
Figure21.Unclamped Inductive Switching
W
a
veform
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CR4N65F A9K
Package Information
C
A
D
G
C1
F
E
N
N
V
a
lues(mm)
Items
MIN
9.60
15.4
8.90
4.30
2.10
2.40
0.60
0.30
1.12
3.40
12.0
2.34
3.15
2.90
MAX
10.4
16.2
9.50
4.90
3.00
3.00
1.00
0.60
1.42
3.80
14.0
2.74
3.55
3.30
A
B
B1
C
C1
D
E
F
G
H
L*
N
Q
*adjustable
TO-220F
Package
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CR4N65F A9K
The name and content of poisonous and harmful material in products
Hazardous Substance
Part
’
s Name
Pb
≤
Hg
≤
Cd
≤
Cr(VI)
PBB
PBDE
DIBP
DEHP
DBP
BBP
Limit
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
0.1%
○
○
○
○
×
0.1%
○
○
○
○
○
0.01%
○
Lead Frame
Molding
Chip
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Wire Bonding
Solder
○
○
○
：
Means the hazardous material is under the criterion of
2011/65/EU
.
×
：
Means the hazardous material exceeds the criterion of
2011/65/EU
.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup
’
s RoHS.
Warnings
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add
：
No.14 Liangxi RD. Wuxi, Jiangsu, China
Mail:214061
H
T
U
UTH
Tel: +86 0510-85807228
Fax: +86- 0510-85800864
Marketing Part
：
Post
：
214061
Tel
：
+86 0510-81805277/81805336
Fax: +86
0510-85800360/85803016
Application and Service
：
Post
：
214061
T
el
/ Fax
：
+86- 0510-81805243/8180511
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