CRMICRO-CRGMF100T120FSA3
| Part # | CRMICRO-CRGMF100T120FSA3 |
Download  | CRMICRO-CRGMF100T120FSA3 |
IGBT-
模块
IGBT-modules
CRGMF100T120FSA3
产品外观
/ Appearance
：
V
CES
= 1200V
I
C nom
= 100A / I
CRM
= 200A
34mm
封装
半桥
/ Half Bridge
特性
/ Features
：
采用高速沟槽栅
/
场终止
IGBT
低开关损耗
High Speed Trench / Field Stop IGBT
Low Switching Losses
标准封装
Standard Housing
应用
/ Applications
逆变焊机
感应加热
Welding
Induction Heating
无 锡 华 润 华 晶 微 电 子 有 限 公 司
Page 1 of 9
2021V01
IGBT-
模块
IGBT-modules
CRGMF100T120FSA3
IGBT,
逆变器
/ IGBT, Inverter
最大额定值
/ Maximum Rated Values
集电极－发射极电压
T
j
= 25°C
V
CES
I
C nom
I
CRM
P
D
1200
100
V
A
Collector-emitter voltage
连续集电极直流电流
Continuous DC collector current
集电极重复峰值电流
Repetitive peak collector current
总功率损耗
T
o
tal power dissipation
栅极－发射极峰值电压
Gate- emitter peak voltage
T
C
= 80°C
, T
j max
= 150°C
t
P
= 1ms
200
A
T
C
= 25°C
, T
j max
= 150°C
428
W
V
V
GES
+/-20
特征值
/ Characteristic Values
min.
typ.
1.95
2.35
max.
2.30
V
V
集电极－发射极饱和电压
Collector-emitter saturation voltage
栅极阈值电压
Gate threshold voltage
内部栅极电阻
Internal gate resistor
输入电容
Input capacitance
输出电容
I
C
= 100A, V
GE
= 15V
I
C
= 100A, V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
V
CE sat
V
GEth
R
Gint
C
ies
C
oes
C
res
I
CES
I
C
= 4 mA, V
CE
= V
GE
, T
j
= 25°C
T
j
= 25°C
6.0
9.5
V
Ω
f = 1MHz, T
j
= 25°C
, V
CE
= 25V, V
GE
= 0V
f = 1MHz, T
j
= 25°C
, V
CE
= 25V, V
GE
= 0V
f = 1MHz, T
j
= 25°C
, V
CE
= 25V, V
GE
= 0V
V
GE
= 0V, V
CE
= 1200V, T
j
= 25°C
V
GE
= 20V, V
CE
= 0V, T
j
= 25°C
9.6
nF
nF
nF
mA
nA
0.572
0.152
Output capacitance
反向传输电容
Reverse transfer capacitance
集电极
–
发射极截止电流
Collector-emitter cut-off current
栅极
–
发射极漏电流
Gate-emitter leakage current
开通延迟时间
Turn-on delay time
上升时间
Rise Time
关断延迟时间
Turn-Off Delay Time
下降时间
Fall Time
开通能量损耗
Turn-on energy loss
关断损耗能量
Turn-off energy loss
结－外壳热阻
1.0
I
GES
t
d on
t
r
200
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
310
350
70
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
80
V
CE
= 600V, I
C
= 100A
V
GE
= ±15V,
R
Gon
= 5
Ω
,
R
Goff
= 5
Ω
,
Inductive Load
230
280
110
190
6.3
7.2
2.0
7.6
t
d off
t
f
E
on
E
off
每个
IGBT / per IGBT
R
thJC
T
j op
0.292 K/W
125 °C
Thermal resistance, junction to case
在开关状态下温度
Temperature under switching conditions
-40
无 锡 华 润 华 晶 微 电 子 有 限 公 司
Page 2 of 9
2021V01
IGBT-
模块
IGBT-modules
CRGMF100T120FSA3
二极管
,
逆变器
/ Diode, Inverter
最大额定值
/ Maximum Rated Values
反向重复峰值电压
T
j
= 25°C
V
RRM
I
F
1200
60
V
A
A
Repetitive peak reverse voltage
连续正向直流电流
Continuous DC forward current
正向重复峰值电流
t
P
= 1ms
I
FRM
120
Repetitive peak forward current
特征值
/ Characteristic Values
正向电压
min.
typ. max.
2.20
1.85
46
68
3.7
9.3
1.4
3.7
V
V
A
A
I
F
= 60A, V
GE
= 0V
I
F
= 60A, V
GE
= 0V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
F
I
RM
Forward voltage
反向恢复峰值电流
Peak reverse recovery current
恢复电荷
Recovered charge
反向恢复损耗
Reverse recovery energy
结－外壳热阻
Thermal resistance, junction to case
在开关状态下温度
Temperature under switching conditions
I
F
= 60A, V
R
= 600 V
V
GE
= -15V
Q
rr
μ
C
mJ
E
rec
R
thJC
T
j op
每个二极管
/ per diode
0.723 K/W
-40
125
°C
无 锡 华 润 华 晶 微 电 子 有 限 公 司
Page 3 of 9
2021V01
IGBT-
模块
IGBT-modules
CRGMF100T120FSA3
模块
/ Module
绝缘测试电压
Isolation test voltage
模块基板材料
Material of module baseplate
内部绝缘
Internal isolation
爬电距离
Creepage distance
电气间隙
RMS, f = 50Hz, t = 1 min.
V
ISOL
2.5
Cu
kV
基本绝缘
(class 1, IEC 61140)
Al
2
O
3
Basic insulation (class1, IEC 61140)
端子至散热器
/ terminal to heatsink
端子至端子
/ terminal to terminal
端子至散热器
/ terminal to heatsink
端子至端子
/ terminal to terminal
17.0
20.0
17.0
9.5
mm
mm
Clearance
相对电痕指数
Comparative tracking index
CTI
>200
min.
typ. max.
30
杂散电感，模块
Stray inductance module
储存温度
Storage temperature
模块安装的安装扭距
Mounting torque for module mounting
端子联接扭距
Terminal connection torque
重量
Weight
L
sCE
T
stg
M
nH
°C
-40
3.0
2.5
125
螺丝
M6
Screw M6
螺丝
M5
Screw M5
5.0
5.0
Nm
Nm
g
M
160
无 锡 华 润 华 晶 微 电 子 有 限 公 司
Page 4 of 9
2021V01
IGBT-
模块
IGBT-modules
CRGMF100T120FSA3
输出特性
IGBT
，逆变器（典型）
Output characteristic IGB
T
,
I
nverter (typical)
I
C
= f (V
CE
)
输出特性
IGBT
，逆变器（典型）
Output characteristic IGB
T
,
I
nverter (typical)
I
C
= f (V
CE
)
V
GE
= 15 V
T
j
= 150
℃
200
200
Vge = 9V
Tj = 25
℃
Vge = 11V
Vge = 13V
Vge = 15V
Vge = 17V
Vge = 19V
180
160
140
120
100
80
180
160
140
120
100
80
Tj = 125
℃
Tj = 150
℃
60
60
40
40
20
20
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
CE
[V]
V
CE
[V]
传输特性
IGBT
，逆变器（典型）
Transfer characteristic IGB
T
,
I
nverter (typical)
I
C
= f (V
GE
开关损耗
IGBT
，逆变器（典型）
Switching losses IGB
T
,
I
nverter (typical)
E
on
= f (I
C
), E
off
= f (I
C
),
)
V
CE
= 20 V
V
GE
=
15 V, R
Gon
= 5
Ω
, R
Goff
= 5
Ω
, V
CE
= 600 V
200
180
160
140
120
100
80
25
Tj = 25
℃
Eon, Tj = 125
℃
Tj = 125
℃
Eoff, Tj = 125
℃
20
15
10
5
60
40
20
0
0
6
7
8
9
10
0
20 40 60 80
100 120 140 160 180 200
I
C
[A]
V
GE
[V]
无 锡 华 润 华 晶 微 电 子 有 限 公 司
Page 5 of 9
2021V01
IGBT-
模块
IGBT-modules
CRGMF100T120FSA3
开关损耗
IGBT
，逆变器（典型）
Switching losses IGB
T
,
I
nverter (typical)
E
on
= f (R
G
), E
off
= f (R
G
),
瞬态热阻抗
IGBT
，逆变器（典型）
Transient thermal impedance IGB
T
,
I
nverter (typical)
Z
thJC
= f (t)
V
GE
=
15 V, I
C
= 100 A, V
CE
= 600 V
35
0.4
Eon, Tj = 125
℃
Zthjc:IGBT
Eoff, Tj = 125
℃
30
0.3
0.2
0.1
0
25
20
15
10
5
0
0
5
10 15 20 25 30 35 40 45 50
0.001
0.01
0.1
1
10
R
G
[Ω]
t [s]
反偏安全工作区
IGBT
，逆变器（
RBSOA
）
Reverse bias operating area IGB
T
,
I
nverter (RBSOA)
I
C
= f (V
CE
)
正向偏压特性 二极管，逆变器（典型）
Forward characteristic of Diode, Inverter (typical)
I
F
= f (V
F
)
V
GE
=
15 V, R
Goff
=10
Ω
, T
j
= 125
℃
250
120
Ic, Module
Tj = 25
℃
Ic, Chip
Tj = 125
℃
100
200
80
60
40
20
0
150
100
50
0
0
200 400 600 800
1000 1200 1400
0
0.5
1
1.5
2
2.5
3
V
CE
[V]
V
F
[V]
无 锡 华 润 华 晶 微 电 子 有 限 公 司
Page 6 of 9
2021V01
IGBT-
模块
IGBT-modules
CRGMF100T120FSA3
瞬态热阻抗 二极管，逆变器（典型）
Transient thermal impedance Diode, Inverter (typical)
Z
thJC
= f (t)
0.8
Zthjc:Diode
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
0.01
0.1
1
10
t [s]
无 锡 华 润 华 晶 微 电 子 有 限 公 司
Page 7 of 9
2021V01
IGBT-
模块
IGBT-modules
CRGMF100T120FSA3
接线图
/ Circuit Diagram
封装尺寸
/ Package Outlines
无 锡 华 润 华 晶 微 电 子 有 限 公 司
Page 8 of 9
2021V01
IGBT-
模块
IGBT-modules
CRGMF100T120FSA3
警告
:
1.
在性能上超过设备的最高额定值可能会对设备造成损坏，甚至永久故障，这可能会影响机器的可靠性。建议在设备最高额定值的
80%
以下使用。
2.
3.
4.
安装散热器时，请注意散热片的扭转力矩和平滑度。
IGBT
是一种对静电敏感的器件，使用时必须保护其免受静电的破坏。
本刊物由华润微电子制作，如有定期更改，恕不另行通知。
Warnings:
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may
affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device.
2.
3.
When installing the heat sink, please pay attention to the torsional moment and the smoothness of the heat sink.
IGBTs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static
electricity when using it.
4. This
publication is made by CR Microelectronics and subject to regular change without notice.
无 锡 华 润 华 晶 微 电 子 有 限 公 司
Page 9 of 9
2021V01
