CRMICRO-CRJD390N65GC
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CRJD390N65GC
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ0.39ꢂ,ꢀ11A
Features
Product Summary
•ꢀCRM(CQ)ꢀSuper_Junctionꢀtechnology
•ꢀMuchꢀlowerꢀRon*AꢀperformanceꢀforꢀOnꢁstateꢀefficiency
•ꢀMuchꢀlowerꢀFOMꢀforꢀfastꢀswitchingꢀefficiency
VDS
650V
0.39ꢂ
11A
R
DS(on)_typ
I
D
Applications
•ꢀLED/LCD/PDPꢀTVꢀandꢀmonitorꢀLighting
•ꢀSolar/Renewable/UPSꢁMicroꢀInverterꢀSystem
•ꢀCharger
100% Avalanche Tested
•ꢀPowerꢀSupply
Package Marking and Ordering Information
Partꢀ#
Marking
ꢁ
Package
TOꢁ252
Packing
ReelꢀSize
TapeꢀWidth
N/A
Qty
CRJD390N65GC
Tape&Reel
N/A
2500pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drainꢁsourceꢀvoltage
650
V
Continuousꢀdrainꢀcurrent
T
C
ꢀ=ꢀ25°C
I
D
A
11
T
C
ꢀ=ꢀ100°C
7.0
Pulsedꢀdrainꢀcurrentꢀ(T
C
ꢀ=ꢀ25°C,ꢀt
p
ꢀlimitedꢀbyꢀT
jmax
)
I
Dꢀpulse
E
AS
44
120
A
mJ
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=60mH,ꢀRg=30
Ω
)
GateꢁSourceꢀvoltage
V
GS
±30
Powerꢀdissipationꢀ(T
C
ꢀ=ꢀ25°C)
P
tot
74
W
°C
T
j
ꢀ,ꢀ
T
stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55…+150
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRJD390N65GC
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ0.39ꢂ,ꢀ11A
Thermal Resistance
Parameter
Symbol
Value
1.68
73
Unit
R
thJC
Thermalꢀresistance,ꢀjunctionꢀ–ꢀcase.ꢀMax
Thermalꢀresistance,ꢀjunctionꢀ–ꢀambient.ꢀMax
°C/W
R
thJA
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drainꢁsourceꢀbreakdown
voltage
BV
DSS
V
GS
=0V,ꢀI
D
=250uA
650
3.5
ꢁ
ꢁ
ꢁ
V
V
V
GS(thꢀ)
V
DS
=V
GS
,I
D
=250uA
Gateꢀthresholdꢀvoltage
4.5
V
DS
=650V,V
GS
=0V
I
DSS
T
C
=25°C
Zeroꢀgateꢀvoltageꢀdrainꢀcurrent
ꢁ
ꢁ
ꢁ
1
ꢁ
ꢃA
nA
T
C
=150°C
10
I
GSS
V
GS
=±30V,V
DS
=0V
Gateꢁsourceꢀleakageꢀcurrent
ꢁ
0.3
80
V
GS
=10V,ꢀI
D
=5.5A,
T
C
=25°C
Drainꢁsourceꢀonꢁstate
resistance
R
DS(on)
ꢁ
ꢁ
ꢁ
0.39
1
0.45
ꢂ
S
T
C
=150°C
ꢁ
ꢁ
g
fs
V
DS
=20V,I
D
=5.5A
Transconductance
12
Dynamic Characteristic
InputꢀCapacitance
C
iss
ꢁ
ꢁ
770
32
ꢁ
ꢁ
V
GS
=0V,ꢀV
DS
=100V,
f=1MHz
C
oss
OutputꢀCapacitance
pF
C
rss
ReverseꢀTransferꢀCapacitance
ꢁ
23
ꢁ
Q
G
Q
gs
Q
gd
t
d(on)
t
r
GateꢀTotalꢀCharge
GateꢁSourceꢀcharge
GateꢁDrainꢀcharge
Turnꢁonꢀdelayꢀtime
Riseꢀtime
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
22
5.3
8.8
20
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
V
GS
=10V,ꢀV
DS
=480V,
I
D
=5.5A,ꢀf=1MHz
nC
T
j
=25°C,ꢀV
GS
=10V,
I
D
=5.5A,ꢀV
DS
=400V,
R
g
=25ꢂ
15
ns
ꢂ
t
d(off)
t
f
Turnꢁoffꢀdelayꢀtime
Fallꢀtime
74
43
V
GS
=0V,ꢀV
DS
=0V,
f=1MHz
R
G
Gateꢀresistance
ꢁ
2.0
ꢁ
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRJD390N65GC
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ0.39ꢂ,ꢀ11A
Body Diode Characteristic
Parameter
Value
typ.
Symbol
V
SD
Unit
V
Test Condition
min.
max.
V
GS
=0V,I
SD
=5.5A
BodyꢀDiodeꢀForwardꢀVoltage
0.5
0.84
218
1
BodyꢀDiodeꢀReverseꢀRecovery
Time
t
rr
ꢁ
ꢁ
ꢁ
ꢁ
ns
Isd=5.5A
dI/dt=100A/us,Vds=10
0V
BodyꢀDiodeꢀReverseꢀRecovery
Charge
Q
rr
2.35
uC
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRJD390N65GC
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ0.39ꢂ,ꢀ11A
Typical Performance Characteristics
Fig 1. Output Characteristics (Tj=25
℃
)
Fig 2. Output Characteristics (Tj=150
℃
)
25
14
12
10
8
10V, 9V, 8V, 7V,6V
5.5V
10V, 9V, 8V, 7V
20
15
6.0V
6
10
5.0V
5.5V
4
5
4.5V
2
5.0V
0
V
GS
=4.0V
4.5V
25
0
V =4V
2
G
0
S
0
5
10
15
0
5
10
15
20
25
-2
-5
V
DS
(V)
V
DS
(V)
Fig 3: Transfer Characteristics
Fig 4: V
TH
Vs Tj Temperature
Characteristics
5
25
ID=250uA
25°C
20
15
10
5
4
3
2
1
0
150°C
0
ꢁ5
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
150
V
GS
(V)
Temperature
（℃）
Fig 5: Rdson Vs Ids Characteristics(Tc=25
℃
)
Fig 6: Rds(on) vs. Temperature
3.0ꢀ
600
550
500
V
GS
=10V
I
D
=5.5A
2.5ꢀ
450
2.0ꢀ
1.5ꢀ
1.0ꢀ
0.5ꢀ
V
GS
=10V
V
GS
=20V
400
350
300
250
200
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
Tj – Junction Temperature (
°
C
)
I
D
(A)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRJD390N65GC
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ0.39ꢂ,ꢀ11A
Fig 7: BVDSS vs. Temperature
Fig 8: Rds(on) vs Gate Voltage
1.10
1200
1100
1000
900
800
700
600
500
400
300
200
I
D
=5.5A
1.08
1.06
1.04
1.02
1.00
0.98
150°C
25°C
4
5
6
7
8
9
10
0
25
50
75
100
125
150
175
V
GS
(V)
Tj – Junction Temperature (
°
C
)
Fig 10: Gate Charge Characteristics
Fig 9: Body-diode Forward Characteristics
12
1000
V
DS
=480V
10
8
I
D
=5.5A
100
10
6
4
25
˚C
150
˚C
1
2
0
0.1
0
2
4
6
8
10 12 14 16 18 20 22 24
0
0.3
0.6
0.9
1.2
1.5
1.8
Qg (nC)
V
SD
– Diode Forward Voltage(V)
Fig 12: Safe Operating Area
Fig 11: Capacitance Characteristics
100
10000
V
GS
=0V
f=1MHz
Limited by
Rds(on)
1ms
1000
10
Ciss
100
10
1
10ms
1
Coss
Crss
0.1
DC
Single pulse
Tc=25
˚C
0.01
0
0
100
200
300
400
500
600
1
10
V
DS
(V)
100
1000
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRJD390N65GC
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ0.39ꢂ,ꢀ11A
Fig 13: Max. Transient Thermal Impedance
10
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
0.001
1.0Eꢁ05
1.0Eꢁ04
1.0Eꢁ03
1.0Eꢁ02
t
p
(sec)
1.0Eꢁ01
1.0E+00
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRJD390N65GC
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ0.39ꢂ,ꢀ11A
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRJD390N65GC
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ0.39ꢂ,ꢀ11A
Package Outline: TO-252
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.15
0.00
0.76
0.60
0.65
5.00
0.45
0.36
5.80
5.00
Max.
2.45
0.15
1.36
0.91
1.15
5.64
0.61
0.66
6.30
6.00
Min.
0.085
0.000
0.030
0.024
0.026
0.197
0.018
0.014
0.228
0.197
Max.
0.096
0.006
0.054
0.036
0.045
0.222
0.024
0.026
0.248
0.236
A
A1
A2
b
b1
b2
c
c1
D
D1
e
2.29ꢀBSC.
2.92ꢀREF
0.090ꢀBSC.
0.115ꢀREF
E
6.30
4.55
9.40
1.18
6.90
5.30
0.248
0.179
0.370
0.046
0.272
0.209
0.413
0.067
E1
H
10.48
1.70
L
L1
L2
L3
L4
0.36
0.72
0.60
0.66
1.35
1.20
0.014
0.028
0.024
0.026
0.053
0.047
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRJD390N65GC
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ0.39ꢂ,ꢀ11A
Revision History
Revison
1.0
Date
2019ꢁ4ꢁ2
Majorꢀchanges
Releaseꢀofꢀformalꢀversion
Disclaimer
Unlessꢀotherwiseꢀspecifiedꢀinꢀtheꢀdatasheet,ꢀtheꢀproductꢀisꢀdesignedꢀandꢀqulifiedꢀasꢀaꢀstandardꢀcommercialꢀproduct
andꢀisꢀnotꢀintendedꢀforꢀuseꢀinꢀapplicationsꢀthatꢀrequireꢀextraordinaryꢀlevelsꢀofꢀqualityꢀandꢀreliability,ꢀsuchꢀas
automotive,ꢀaviation/aerospaceꢀandꢀlifeꢁsupportꢀdevicesꢀorꢀsystems.
Anyꢀandꢀallꢀsemicondutorꢀproductsꢀhaveꢀcertainꢀprobabilityꢀtoꢀfailꢀorꢀmalfunction,ꢀwhichꢀmayꢀresultꢀinꢀpersonal
injury,ꢀdeathꢀorꢀpropertyꢀdamage.ꢀCustomerꢀareꢀsolelyꢀresponsibleꢀforꢀprovidingꢀadequateꢀsafeꢀmeasuresꢀwhen
designꢀtheirꢀsystems.
CRM(CQ)ꢀreservesꢀtheꢀrightꢀtoꢀimproveꢀproductꢀdesign,ꢀfunctionꢀandꢀreliabilityꢀwithoutꢀnotice.
©China Resources Microelectronics (Chongqing) Limited
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