CRMICRO-CRJF190N65GCF
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CRJF190N65GCF
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ181mꢂ,ꢀ20A
Features
Product Summary
•ꢀCRM(CQ)ꢀSuper_Junctionꢀtechnology
•ꢀMuchꢀlowerꢀRon*AꢀperformanceꢀforꢀOnꢁstateꢀefficiency
•ꢀMuchꢀlowerꢀFOMꢀforꢀfastꢀswitchingꢀefficiency
VDS
650V
181mꢂ
20A
R
DS(on)_typ
I
D
Applications
•ꢀLED/LCD/PDPꢀTVꢀandꢀmonitorꢀLighting
•ꢀSolar/Renewable/UPSꢁMicroꢀInverterꢀSystem
•ꢀCharger
100% Avalanche Tested
•ꢀPowerꢀSupply
Top view
Bottom view
Package Marking and Ordering Information
Partꢀ#
Marking
ꢁ
Package
TO220F
Packing
Tube
ReelꢀSize
TapeꢀWidth
N/A
Qty
CRJF190N65GCF
N/A
50pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drainꢁsourceꢀvoltage
650
V
Continuousꢀdrainꢀcurrent
T
C
ꢀ=ꢀ25°C
I
D
A
20
T
C
ꢀ=ꢀ100°C
14.0
Pulsedꢀdrainꢀcurrentꢀ(T
C
ꢀ=ꢀ25°C,ꢀt
p
ꢀlimitedꢀbyꢀT
jmax
)
I
Dꢀpulse
E
AS
80
320
A
mJ
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=60mH,ꢀRg=30
Ω
)
GateꢁSourceꢀvoltage
V
GS
±30
Powerꢀdissipationꢀ(T
C
ꢀ=ꢀ25°C)
P
tot
29
W
°C
T
j
ꢀ,ꢀ
T
stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55…+150
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRJF190N65GCF
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ181mꢂ,ꢀ20A
Thermal Resistance
Parameter
Symbol
Value
4.31
82
Unit
R
thJC
Thermalꢀresistance,ꢀjunctionꢀ–ꢀcase.ꢀMax
Thermalꢀresistance,ꢀjunctionꢀ–ꢀambient.ꢀMax
°C/W
R
thJA
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit Test
Condition
min.
typ.
max.
Static Characteristic
Drainꢁsourceꢀbreakdown
voltage
BV
DSS
V
GS
=0V,ꢀI
D
=250uA
650
3.5
ꢁ
ꢁ
V
V
V
GS(thꢀ)
V
DS
=V
GS
,I
D
=250uA
V
DS
=650V,V
GS
=0V
T
C
=25°C
Gateꢀthresholdꢀvoltage
4.5
Zeroꢀgateꢀvoltageꢀdrain
current
I
DSS
ꢁ
ꢁ
ꢁ
5
ꢁ
ꢃA
nA
T
C
=150°C
1000
I
GSS
V
V
GS
=±30V,V
DS
=0V
Gateꢁsourceꢀleakageꢀcurrent
ꢁ
±100
GS
=10V,ꢀI
D
=10A,
T
C
=25°C
Drainꢁsourceꢀonꢁstate
resistance
R
DS(on)
ꢁ
ꢁ
ꢁ
181
518
14.5
210
mꢂ
S
T
C
=150°C
ꢁ
ꢁ
g
fs
V
DS
=20V,I
D
=10A
Transconductance
Dynamic Characteristic
InputꢀCapacitance
C
iss
ꢁ
ꢁ
1427
67
ꢁ
ꢁ
V
GS
=0V,ꢀV
DS
=100V,
f=1MHz
C
oss
OutputꢀCapacitance
pF
C
rss
ReverseꢀTransferꢀCapacitance
ꢁ
21
ꢁ
Q
G
Q
gs
Q
gd
t
d(on)
t
r
GateꢀTotalꢀCharge
GateꢁSourceꢀcharge
GateꢁDrainꢀcharge
Turnꢁonꢀdelayꢀtime
Riseꢀtime
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
41
12
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
V
GS
=10V,ꢀV
DS
=480V,
I
D
=10A,ꢀf=1MHz
nC
20
42.5
58
T
j
=25°C,ꢀV
GS
=10V,
I
D
=10A,ꢀV
DS
=400V,
R
g
=25ꢂ
ns
ꢂ
t
d(off)
t
f
Turnꢁoffꢀdelayꢀtime
Fallꢀtime
105
36
V
GS
=0V,ꢀV
DS
=0V,
f=1MHz
R
G
Gateꢀresistance
ꢁ
0.9
ꢁ
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRJF190N65GCF
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ181mꢂ,ꢀ20A
Body Diode Characteristic
Parameter
Value
typ.
Symbol
V
SD
Unit Test
Condition
max.
min.
V
GS
=0V,I
SD
=10A
BodyꢀDiodeꢀForwardꢀVoltage
0.5
0.84
108
1
ꢁ
V
BodyꢀDiodeꢀReverseꢀRecovery
Time
t
rr
ꢁ
ꢁ
ns
uC
Isd=10A
dI/dt=100A/us,Vds=1
00V
BodyꢀDiodeꢀReverseꢀRecovery
Charge
Q
rr
0.54
ꢁ
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRJF190N65GCF
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ181mꢂ,ꢀ20A
Typical Performance Characteristics
Fig 1. Output Characteristics (Tj=25
℃
)
Fig 2. Output Characteristics (Tj=150
℃
)
45
30
10V, 9V
10V, 9V, 8V, 7V,6V
40
25
35
8V
30
7V
20
25
20
15
15
10
6V
7V
10
5
5.5V
5V
5
6V
4.5V
0
0
V
GS
=5V/5.5V
20
V
GS
=4V
20
0
5
10
15
25
0
5
10
15
25
V
DS
(V)
V
DS
(V)
Fig 3: Transfer Characteristics
Fig 4: V
TH
Vs Tj Temperature
Characteristics
5
45
40
35
30
25
20
15
10
5
25°C
ID=250uA
4
3
2
1
0
150°C
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
V
GS
(V)
Temperature
（℃）
Fig 5: Rdson Vs Ids Characteristics(Tc=25
℃
)
Fig 6: Rds(on) vs. Temperature
3.5ꢀ
300
280
260
V
GS
=10V
I
D
=10A
3.0ꢀ
2.5ꢀ
2.0ꢀ
1.5ꢀ
1.0ꢀ
0.5ꢀ
240
V
GS
=10V
V
GS
=20V
220
200
180
160
140
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
Tj – Junction Temperature (
°
C
)
I
D
(A)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRJF190N65GCF
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ181mꢂ,ꢀ20A
Fig 7: BVDSS vs. Temperature
Fig 8: Rds(on) vs Gate Voltage
1.10
1.09
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
1100
900
700
500
300
100
I
D
=10A
150°C
25°C
4
5
6
7
8
9
10
0
25
50
75
100
125
150
175
V
GS
(V)
Tj – Junction Temperature (
°
C
)
Fig 10: Gate Charge Characteristics
Fig 9: Body-diode Forward Characteristics
12
1000
V
DS
=480V
10
8
I
D
=10A
100
10
6
4
25
˚C
150
˚C
1
2
0
0.1
0
4
8
12 16 20 24 28 32 36 40 44
0
0.3
0.6
0.9
1.2
1.5
1.8
Qg (nC)
V
SD
– Diode Forward Voltage(V)
Fig 12: Safe Operating Area
Fig 11: Capacitance Characteristics
100000
1us
V
GS
=0V
f=1MHz
Limited by
Rds(on)
10us
10000
10
Ciss
100us
1000
100
10
1ms
1
Coss
Crss
10ms
0.1
DC
1
Single pulse
Tc=25
˚C
0
0.01
0
100
200
300
400
500
600
1
10
V
DS
(V)
100
1000
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRJF190N65GCF
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ181mꢂ,ꢀ20A
Fig 13: Max. Transient Thermal Impedance
D=0.5
1
0.1
0.3
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
0.0001
1.0Eꢁ05
1.0Eꢁ04
1.0Eꢁ03
1.0Eꢁ02
t
p
(sec)
1.0Eꢁ01
1.0E+00
1.0E+01
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRJF190N65GCF
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ181mꢂ,ꢀ20A
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRJF190N65GCF
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ181mꢂ,ꢀ20A
Package Outline: TO-220F
C
A
D
G
C1
E
F
N
N
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
9.60
15.40
8.90
4.30
2.10
2.40
0.60
0.30
1.12
3.40
12.00
2.34
3.15
2.90
Max.
10.40
16.20
9.50
4.90
3.00
3.00
1.00
0.60
1.42
3.80
14.00
2.74
3.55
3.30
Min.
0.378
0.606
0.350
0.169
0.083
0.094
0.024
0.012
0.044
0.134
0.472
0.092
0.124
0.114
Max.
0.409
0.638
0.374
0.193
0.118
0.118
0.039
0.024
0.056
0.150
0.551
0.108
0.140
0.130
A
B
B1
C
C1
D
E
F
G
H
L*
N
Q
ΦP
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRJF190N65GCF
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ181mꢂ,ꢀ20A
Revision History
Revison
1.0
Date
2020ꢁ7ꢁ7
Majorꢀchanges
Releaseꢀofꢀformalꢀversion
Disclaimer
Unlessꢀotherwiseꢀspecifiedꢀinꢀtheꢀdatasheet,ꢀtheꢀproductꢀisꢀdesignedꢀandꢀqulifiedꢀasꢀaꢀstandardꢀcommercialꢀproduct
andꢀisꢀnotꢀintendedꢀforꢀuseꢀinꢀapplicationsꢀthatꢀrequireꢀextraordinaryꢀlevelsꢀofꢀqualityꢀandꢀreliability,ꢀsuchꢀas
automotive,ꢀaviation/aerospaceꢀandꢀlifeꢁsupportꢀdevicesꢀorꢀsystems.
Anyꢀandꢀallꢀsemicondutorꢀproductsꢀhaveꢀcertainꢀprobabilityꢀtoꢀfailꢀorꢀmalfunction,ꢀwhichꢀmayꢀresultꢀinꢀpersonal
injury,ꢀdeathꢀorꢀpropertyꢀdamage.ꢀCustomerꢀareꢀsolelyꢀresponsibleꢀforꢀprovidingꢀadequateꢀsafeꢀmeasuresꢀwhen
designꢀtheirꢀsystems.
CRM(CQ)ꢀreservesꢀtheꢀrightꢀtoꢀimproveꢀproductꢀdesign,ꢀfunctionꢀandꢀreliabilityꢀwithoutꢀnotice.
©China Resources Microelectronics (Chongqing) Limited
Page 9
