CRMICRO-CRJT99N65G2
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CRJT99N65G2
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ81mꢂ,ꢀ35A
Features
Product Summary
•ꢀCRM(CQ)ꢀSuper_Junctionꢀtechnology
•ꢀMuchꢀlowerꢀRon*AꢀperformanceꢀforꢀOnꢁstateꢀefficiency
•ꢀMuchꢀlowerꢀFOMꢀforꢀfastꢀswitchingꢀefficiency
VDS
650V
R
DS(on)_typ
81mꢂ
I
D
35A
Applications
100% DVDS Tested
•ꢀLED/LCD/PDPꢀTVꢀandꢀmonitorꢀLighting
•ꢀSolar/Renewable/UPSꢁMicroꢀInverterꢀSystem
•ꢀCharger
100% Avalanche Tested
•ꢀPowerꢀSupply
Topꢀview
Bottomꢀview
CRJT99N65G2
Package Marking and Ordering Information
Partꢀ#
Marking
ꢁ
Package
TOꢁ220
Packing
Tube
ReelꢀSize
TapeꢀWidth
N/A
Qty
CRJT99N65G2
N/A
50pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drainꢁsourceꢀvoltage
650
V
Continuousꢀdrainꢀcurrent
T
C
ꢀ=ꢀ25°C
I
D
A
35
22
T
C
ꢀ=ꢀ100°C
Pulsedꢀdrainꢀcurrentꢀ(T
C
ꢀ=ꢀ25°C,ꢀt
p
ꢀlimitedꢀbyꢀT
jmax
)
I
Dꢀpulse
E
AS
140
480
A
mJ
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=60mH,ꢀRg=30
Ω
)
GateꢁSourceꢀvoltage
V
GS
±30
Powerꢀdissipationꢀ(T
C
ꢀ=ꢀ25°C)
P
tot
252
W
°C
T
j
ꢀ,ꢀ
T
stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55…+150
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRJT99N65G2
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ81mꢂ,ꢀ35A
Thermal Resistance
Parameter
Value
typ.
Symbol
Unit Test
Condition
min.
max.
Thermalꢀresistance,ꢀjunctionꢀ–
case.ꢀMax
Thermalꢀresistance,ꢀjunctionꢀ–
ambient.ꢀMax
RthJC
RthJA
ꢁ
0.354
ꢁ
0.50
75
°C/W
°C/W
ꢁ
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit Test
Condition
min.
typ.
max.
Static Characteristic
Drainꢁsourceꢀbreakdown
voltage
BV
DSS
V
GS
=0V,ꢀI
D
=250uA
V
DS
=V
GS
,I
D
=250uA
650
3
ꢁ
ꢁ
ꢁ
V
V
V
GS(thꢀ)
Gateꢀthresholdꢀvoltage
4
V
DS
=650V,V
GS
=0V
T
C
=25°C
I
DSS
Zeroꢀgateꢀvoltageꢀdrainꢀcurrent
ꢁ
ꢁ
ꢁ
1
ꢁ
ꢃA
nA
T
C
=150°C
10
I
GSS
V
GS
=±30V,V
DS
=0V
Gateꢁsourceꢀleakageꢀcurrent
ꢁ
ꢁ
±100
V
GS
=10V,ꢀI
D
=17A,
T
C
=25°C
Drainꢁsourceꢀonꢁstate
resistance
R
DS(on)
ꢁ
ꢁ
ꢁ
81
99
ꢁ
mꢂ
S
T
C
=150°C
205
29.6
g
fs
V
DS
=20V,I
D
=17A
Transconductance
ꢁ
Dynamic Characteristic
InputꢀCapacitance
C
iss
ꢁ
ꢁ
2345
133
ꢁ
ꢁ
V
GS
=0V,ꢀV
DS
=100V,
C
oss
OutputꢀCapacitance
pF
f=1MHz
C
rss
ReverseꢀTransferꢀCapacitance
ꢁ
43
ꢁ
Q
G
Q
gs
Q
gd
t
d(on)
t
r
GateꢀTotalꢀCharge
GateꢁSourceꢀcharge
GateꢁDrainꢀcharge
Turnꢁonꢀdelayꢀtime
Riseꢀtime
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
70
15.6
28
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
V
GS
=10V,ꢀV
DS
=480V,
I
D
=17A
nC
36.5
42.5
254
40
T
j
=25°C,ꢀV
GS
=10V,
I
D
=17A,ꢀV
DS
=400V,
R
g
=27ꢂ
ns
ꢂ
t
d(off)
t
f
Turnꢁoffꢀdelayꢀtime
Fallꢀtime
R
G
V
GS
=0V,ꢀV
DS
=0V,ꢀf=1MHz
Gateꢀresistance
ꢁ
0.86
ꢁ
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRJT99N65G2
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ81mꢂ,ꢀ35A
Body Diode Characteristic
Parameter
Value
typ.
Symbol
V
SD
Unit Test
Condition
min.
max.
V
GS
=0V,I
SD
=17A
BodyꢀDiodeꢀForwardꢀVoltage
0.7
0.86
347
1.2
V
BodyꢀDiodeꢀReverseꢀRecovery
Time
t
rr
ꢁ
ꢁ
ꢁ
ꢁ
ns
uC
Isd=17A
dI/dt=100A/us,Vds=400V
BodyꢀDiodeꢀReverseꢀRecovery
Charge
Q
rr
5.92
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRJT99N65G2
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ81mꢂ,ꢀ35A
Typical Performance Characteristics
Fig 1. Output Characteristics (Tj=25
℃
)
Fig 2. Output Characteristics (Tj=150
℃
)
120
70
60
50
40
30
20
10
0
8V,9V,10V
7V,8V,9V
6V
100
7V
80
60
40
20
0
5V
6V
5.5V
5.5V
5V
5V
V
GS
=4V/4.5V
V
GS
=
4V/4.5V
0
5
10
15
20
25
0
5
10
15
20
25
V
DS
(V)
V
DS
(V)
Fig 4: V
TH
Vs Tj Temperature
Characteristics
4
Fig 3: Transfer Characteristics
100
90
80
70
60
50
40
30
20
10
0
25°C
3.5
3
ID=250uA
2.5
2
150°C
1.5
1
0.5
0
0
25
50
75
100
125
150
1
3
5
7
9
11
13
15
V
GS
(V)
Temperature
（℃）
Fig 5: Rdson Vs Ids Characteristics(Tc=25
℃
)
Fig 6: Rds(on) vs. Temperature
3.0ꢀ
160
150
140
130
120
V
GS
=10V
I
D
=17A
2.5ꢀ
2.0ꢀ
1.5ꢀ
1.0ꢀ
0.5ꢀ
V
GS
=10V
110
V
GS
=20V
100
90
80
70
60
0
25
50
75
100
125
150
175
0
20
40
60
80
100
Tj – Junction Temperature (
°
C
)
I
D
(A)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRJT99N65G2
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ81mꢂ,ꢀ35A
Fig 7: BVDSS vs. Temperature
Fig 8: Rds(on) vs Gate Voltage
1.12
500
450
400
350
300
250
200
150
100
50
I
D
=17A
150°C
1.08
1.04
1.00
0.96
0.92
25°C
0
4
5
6
7
8
9
10
ꢁ50 ꢁ25
0
25
50
75 100
125 150
V
GS
(V)
Tj – Junction Temperature (
°
C
)
Fig 10: Gate Charge Characteristics
Fig 9: Body-diode Forward Characteristics
12
1000
V
DS
=480V
I
D
=17A
10
8
100
6
10
4
150
˚C
25
˚C
1
2
0
0.1
0
10
20
30
40
50
60
70
80
0
0.3
0.6
0.9
1.2
1.5
1.8
Qg (nC)
V
SD
– Diode Forward Voltage(V)
Fig 11: Capacitance Characteristics
Fig 12: Safe Operating Area
100000
V
GS
=0V
f=1MHz
Limited by
Rds(on)
100
1us
10000
10us
100us
Ciss
1000
100
10
10
1
1ms
10ms
Coss
Crss
DC
0.1
1
Single pulse
Tc=25
˚C
0
0.01
0
100
200
300
400
500
600
1
10
V
DS
(V)
100
1000
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRJT99N65G2
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ81mꢂ,ꢀ35A
Fig 13: Max. Transient Thermal Impedance
1
D=0.5
0.3
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
0.0001
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
1.0Eꢁ05
1.0Eꢁ04
1.0Eꢁ03
1.0Eꢁ02
t
p
(sec)
1.0Eꢁ01
1.0E+00
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRJT99N65G2
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ81mꢂ,ꢀ35A
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRJT99N65G2
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ81mꢂ,ꢀ35A
Package Outline: TO-220
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
9.60
15.00
8.90
4.30
2.30
1.20
0.70
0.30
1.17
2.70
12.60
2.34
2.40
3.50
Max.
10.60
16.00
9.50
4.80
3.10
1.40
0.90
0.60
1.37
3.80
14.80
2.74
3.00
3.90
Min.
0.378
0.591
0.350
0.169
0.091
0.047
0.028
0.012
0.046
0.106
0.496
0.092
0.094
0.138
Max.
0.417
0.630
0.374
0.189
0.122
0.055
0.035
0.024
0.054
0.150
0.583
0.108
0.118
0.154
A
B
B1
C
C1
D
E
F
G
H
L
N
Q
ΦP
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRJT99N65G2
华润微电子(重庆)有限公司
SJMOSꢀNꢁMOSFETꢀ650V,ꢀ81mꢂ,ꢀ35A
Marking
Part NO.
XBBAAAAY
NOTE:
NXBBAAAAYꢀ
X
BB
—Assemblyꢀlocationꢀcode
—Fabꢀcode
AAAA
Y
—Lotꢀcode
—Binꢀcode
Revision History
Revison
Date
2020ꢁ8ꢁ19
Majorꢀchanges
Firstꢀversion
1.0
Disclaimer
Unlessꢀotherwiseꢀspecifiedꢀinꢀtheꢀdatasheet,ꢀtheꢀproductꢀisꢀdesignedꢀandꢀqulifiedꢀasꢀaꢀstandardꢀcommercialꢀproduct
andꢀisꢀnotꢀintendedꢀforꢀuseꢀinꢀapplicationsꢀthatꢀrequireꢀextraordinaryꢀlevelsꢀofꢀqualityꢀandꢀreliability,ꢀsuchꢀas
automotive,ꢀaviation/aerospaceꢀandꢀlifeꢁsupportꢀdevicesꢀorꢀsystems.
Anyꢀandꢀallꢀsemicondutorꢀproductsꢀhaveꢀcertainꢀprobabilityꢀtoꢀfailꢀorꢀmalfunction,ꢀwhichꢀmayꢀresultꢀinꢀpersonal
injury,ꢀdeathꢀorꢀpropertyꢀdamage.ꢀCustomerꢀareꢀsolelyꢀresponsibleꢀforꢀprovidingꢀadequateꢀsafeꢀmeasuresꢀwhen
designꢀtheirꢀsystems.
CRM(CQ)ꢀreservesꢀtheꢀrightꢀtoꢀimproveꢀproductꢀdesign,ꢀfunctionꢀandꢀreliabilityꢀwithoutꢀnotice.
©China Resources Microelectronics (Chongqing) Limited
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