CRMICRO-CRSM043N10N4
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CRSM043N10N4
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ3.8mꢂ,ꢀ80A
华润微电子(重庆)有限公司
Features
Product Summary
V
DS
100V
3.8mꢂ
80A
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS4ꢀtechnology
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀR
DS(on)
•ꢀExcellentꢀQ
g
xR
DS(on)ꢀ
product(FOM)
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria
Applications
R
DS(on)@10Vꢀtyp
I
Dꢀ
100% Avalanche Tested
100% DVDS Tested
•ꢀSynchronousꢀRectificationꢀforꢀAC/DCꢀQuickꢀCharger
•ꢀBatteryꢀmanagement
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)
Package Marking and Ordering Information
Partꢀ#
Marking
Package
DFN5X6ꢀ
ReelꢀSize
N/A
TapeꢀWidth
N/A
Qty
Packing
CRSM043N10N4
043N10N4
Tape&Reel
4000pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drainꢁsourceꢀvoltage
100
V
Continuousꢀdrainꢀcurrent
T
C
ꢀ=ꢀ25°C(Siliconꢀlimit)ꢀ
T
C
ꢀ=ꢀ25°C(Packageꢀlimit)ꢀ
T
C
ꢀ=ꢀ100°C(Siliconꢀlimit))
126ꢀ
80
I
D
A
80ꢀ
Pulsedꢀdrainꢀcurrentꢀ(T
C
ꢀ=ꢀ25°C,ꢀt
p
ꢀlimitedꢀbyꢀT
jmax
)
I
Dꢀpulse
E
AS
320ꢀ
189ꢀ
A
mJ
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(I
D
=0.3mH,ꢀRg=25
Ω
)
GateꢁSourceꢀvoltage
V
GS
±20
Powerꢀdissipationꢀ(T
C
ꢀ=ꢀ25°C)
P
tot
132ꢀ
W
°C
T
j
ꢀ,ꢀ
T
stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55…+150
Solderingꢀtemperature,ꢀwaveꢀsolderingꢀonlyꢀallowedꢀatꢀleadsꢀ
(1.6mmꢀfromꢀcaseꢀforꢀ10s)
Tsold
260
°C
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRSM043N10N4
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ3.8mꢂ,ꢀ80A
华润微电子(重庆)有限公司
Thermal Resistance
Value
typ.
Parameter
Symbol
RthJC
Unit
TestꢀCondition
ꢁ
min.
ꢁ
max.
0.95
Thermalꢀresistance,ꢀ
junctionꢀ–ꢀcase.
0.53
ꢁ
°C/W
Thermalꢀresistance,ꢀ
junctionꢀꢁꢀambient(min.ꢀ
footprint)
RthJA
ꢁ
55
°C/W
ꢁ
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drainꢁsourceꢀbreakdownꢀ
voltage
BV
DSS
V
GS
=0V,ꢀI
D
=250uA
100
2.2
ꢁ
ꢁ
V
V
V
GS(thꢀ)
V
DS
=V
GS
,I
D
=250uA
Gateꢀthresholdꢀvoltage
3
3.8
V
DS
=100V,V
GS
=0V
T
j
=25°C
Zeroꢀgateꢀvoltageꢀdrainꢀ
current
ꢁ
ꢁ
ꢁ
ꢁ
1
I
DSS
ꢃA
T
j
=150°C
100
Gateꢁsourceꢀleakageꢀ
current
I
GSS
V
GS
=±20V,V
DS
=0V
ꢁ
±100
4.6ꢀ
nA
Drainꢁsourceꢀonꢁstateꢀ
resistance
R
DS(on)
VGS=10V,I
D
=50A
ꢁ
3.8ꢀ
mꢂ
VGS=8V,I
D
=40A
V
DS
=5V,I
D
=50A
ꢁ
ꢁ
4.1ꢀ
6.1ꢀ
ꢁ
mꢂ
S
g
fs
Transconductance
148.8
Dynamic Characteristic
InputꢀCapacitance
C
iss
ꢁ
ꢁ
4211
848
6316.5
1272
V
GS
=0V,ꢀV
DS
=50V,ꢀ
f=1MHz
C
oss
OutputꢀCapacitance
pF
ReverseꢀTransferꢀ
Capacitance
C
rss
ꢁ
34
68
Q
G
Q
gs
Q
gd
t
d(on)
t
r
GateꢀTotalꢀCharge
GateꢁSourceꢀcharge
GateꢁDrainꢀcharge
Turnꢁonꢀdelayꢀtime
Riseꢀtime
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
67
100.5
V
GS
=10V,ꢀV
DS
=50V,ꢀ
I
D
=50A,ꢀf=1MHz
23
34.5ꢀ
nC
11.5
21.8
92.0
39.8
82.4
23
ꢁ
ꢁ
V
GS
=10V,ꢀV
DD
=50V,ꢀ
R
G_ext
=2.7ꢂ
ns
ꢂ
t
d(off)
t
f
Turnꢁoffꢀdelayꢀtime
Fallꢀtime
ꢁ
ꢁ
V
GS
=0V,ꢀV
DS
=0V,ꢀ
f=1MHz
R
G
Gateꢀresistance
ꢁ
1.58
2.37
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRSM043N10N4
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ3.8mꢂ,ꢀ80A
华润微电子(重庆)有限公司
Body Diode Characteristic
Value
typ.
Symbol
Parameter
Unit
V
Test Condition
V
GS
=0V,I
SD
=50A
TCꢀ=ꢀ25°C
min.
max.
BodyꢀDiodeꢀForwardꢀ
Voltage
V
SD
ꢁ
0.82
ꢁ
1.4
BodyꢀDiodeꢀContinuousꢀ
ForwardꢀCurrentꢀ
I
S
ꢁ
ꢁ
ꢁ
ꢁ
126ꢀ
505.92
129
A
BodyꢀDiodeꢀPulsedꢀCurrentꢀ
I
S
ꢀpulse
t
rr
ꢁ
A
TCꢀ=ꢀ25°C
BodyꢀDiodeꢀReverseꢀ
RecoveryꢀTime
64.5
120
ns
nC
I
F
=50A,ꢀ
dI/dt=100A/ꢃs
BodyꢀDiodeꢀReverseꢀ
RecoveryꢀCharge
Q
rr
240
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRSM043N10N4
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ3.8mꢂ,ꢀ80A
华润微电子(重庆)有限公司
Typical Performance Characteristics
Figꢀ2:ꢀTransferꢀCharacteristics
Figꢀ1:ꢀOutputꢀCharacteristics
250
200
150
100
50
280
6.5V
8V 7V
10V
V
DS
=5V
240
200
160
120
80
5.5V
4.5V
150°C
25°C
40
0
0
0
1
2
3
4
5
2
3
4
5
6
7
8
9
10
V
DS
(V)
V
GS
(V)
3:ꢀRds(on)ꢀvsꢀDrainꢀCurrentꢀandꢀ
Figꢀ4:ꢀRds(on)ꢀvsꢀGateꢀVoltage
20
GateꢀVoltage
5.0ꢀ
18
16
14
12
10
8
I
D
=50A
4.8ꢀ
4.6ꢀ
4.4ꢀ
4.2ꢀ
4.0ꢀ
3.8ꢀ
3.6ꢀ
3.4ꢀ
3.2ꢀ
3.0ꢀ
V
GS
=8V
150°C
25°C
6
V
GS
=10V
4
2
0
4
5
6
7
8
9
10
20
70
120
170
V
GS
(V)
I
D
(A)
Figꢀ6:ꢀCapacitanceꢀCharacteristics
Figꢀ5:ꢀRds(on)ꢀvs.ꢀTemperature
10000
1000
100
2.0ꢀ
Ciss
1.8ꢀ
1.6ꢀ
1.4ꢀ
1.2ꢀ
1.0ꢀ
0.8ꢀ
V
GS
=10V
I
D
=50A
Coss
Crss
V
GS
=8V
I
D
=50A
V
GS
=0V
f=1MHz
10
0
10
20
30
40
50
60
70
80
90 100
25
50
75
100
125
150
Tj – Junction Temperature (
°
C)
V
DS
(V)
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRSM043N10N4
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ3.8mꢂ,ꢀ80A
华润微电子(重庆)有限公司
Figꢀ8:ꢀBodyꢁdiodeꢀForwardꢀ
Characteristics
Figꢀ7:ꢀGateꢀChargeꢀCharacteristics
1000
10
V
DS
=50V
I
D
=50A
8
100
10
1
6
4
2
0
150
˚C
25
˚C
0.2
0.4
0.6
0.8
1
1.2
0
10
20
30
Qg (nC)
40
50
60
V
SD
– Diode Forward Voltage(V)
Figꢀ10:ꢀDrainꢀCurrentꢀDerating
Figꢀ9:ꢀPowerꢀDissipation
90
140
80
70
60
50
40
30
120
100
80
60
40
20
0
V
GS
≥10V
20
10
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Figꢀ11:ꢀSafeꢀOperatingꢀArea
1us
10us
Limited by
Rds(on)
100us
100
10
1
1ms
10ms
DC
Single pulse
Tc=25
˚C
0.1
0.1
1
10
100
V
DS
(V)
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRSM043N10N4
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ3.8mꢂ,ꢀ80A
华润微电子(重庆)有限公司
Figꢀ12:ꢀMax.ꢀTransientꢀThermalꢀImpedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
0.0001
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
1Eꢁ06
1Eꢁ05
0.0001
0.001
0.01
0.1
t
p
(sec)
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRSM043N10N4
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ3.8mꢂ,ꢀ80A
华润微电子(重庆)有限公司
Test Circuit & Waveform
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRSM043N10N4
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ3.8mꢂ,ꢀ80A
华润微电子(重庆)有限公司
Package Outline:
DFN5X6
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
0.80ꢀ
1.20ꢀ
0.031ꢀ
0.047ꢀ
A1
0.00ꢀ
0.05ꢀ
0.000ꢀ
0.002ꢀ
b
c
0.30ꢀ
0.15ꢀ
4.80ꢀ
0.51ꢀ
0.35ꢀ
5.40ꢀ
0.012ꢀ
0.006ꢀ
0.189ꢀ
0.020ꢀ
0.014ꢀ
0.213ꢀ
D
e
E
G
H
J
1.27ꢀBSC
0.050ꢀBSC
5.66ꢀ
0.30ꢀ
5.90ꢀ
3.32ꢀ
3.61ꢀ
6.06ꢀ
0.71ꢀ
6.35ꢀ
3.92ꢀ
4.25ꢀ
0.223ꢀ
0.012ꢀ
0.232ꢀ
0.131ꢀ
0.142ꢀ
0.239ꢀ
0.028ꢀ
0.250ꢀ
0.154ꢀ
0.167ꢀ
K
L1
0.05ꢀ
0.00ꢀ
0.25ꢀ
0.15ꢀ
0.002ꢀ
0.000ꢀ
0.010ꢀ
0.006ꢀ
L2
R
0.25ꢀREF
0.010ꢀREF
θ
0°
12°
0°
12°
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRSM043N10N4
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ3.8mꢂ,ꢀ80A
华润微电子(重庆)有限公司
Marking
Part NO.
NXBBAAAAY
NOTE:
NXBBAAAAYꢀ
N
X
—WireꢀBondꢀcode
—Assemblyꢀlocationꢀcode
BB
AAAA
Y
—Fabꢀcode
—Lotꢀcode
—Binꢀcode
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
Page 9
CRSM043N10N4
SkyMOS4ꢀNꢁMOSFETꢀ100V,ꢀ3.8mꢂ,ꢀ80A
华润微电子(重庆)有限公司
Revision History
Revison
1.0
Date
Majorꢀchanges
ReleaseꢀofꢀꢀPreliminaryꢀversion.
2020ꢁ07ꢁ08
Disclaimer
Unlessꢀotherwiseꢀspecifiedꢀinꢀtheꢀdatasheet,ꢀtheꢀproductꢀisꢀdesignedꢀandꢀqulifiedꢀasꢀaꢀstandardꢀcommercialꢀ
productꢀandꢀisꢀnotꢀintendedꢀforꢀuseꢀinꢀapplicationsꢀthatꢀrequireꢀextraordinaryꢀlevelsꢀofꢀqualityꢀandꢀreliability,ꢀsuchꢀ
asꢀautomotive,ꢀaviation/aerospaceꢀandꢀlifeꢁsupportꢀdevicesꢀorꢀsystems.
Anyꢀandꢀallꢀsemicondutorꢀproductsꢀhaveꢀcertainꢀprobabilityꢀtoꢀfailꢀorꢀmalfunction,ꢀwhichꢀmayꢀresultꢀinꢀpersonalꢀ
injury,ꢀdeathꢀorꢀpropertyꢀdamage.ꢀCustomerꢀareꢀsolelyꢀresponsibleꢀforꢀprovidingꢀadequateꢀsafeꢀmeasuresꢀwhenꢀ
designꢀtheirꢀsystems.ꢀ
CRM(CQ)ꢀreservesꢀtheꢀrightꢀtoꢀimproveꢀproductꢀdesign,ꢀfunctionꢀandꢀreliabilityꢀwithoutꢀnotice.
Rev 1.0
©China Resources Microelectronics (Chongqing) Limited
Page 10
