CRMICRO-CRSS082N15N
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CRST085N15N,ꢀCRSS082N15N
华润微电子
(
重庆
)
有限公司
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Features
Product Summary
V
DS
150V
7mꢂ
120A
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS1ꢀtechnology
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀR
DS(on)
•ꢀExcellentꢀQ
g
xR
DS(on)ꢀ
product(FOM)
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria
R
DS(on)
I
Dꢀ
Applications
•ꢀMotorꢀcontrolꢀandꢀdrive
•ꢀBatteryꢀmanagement
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)
100% Avalanche Tested
CRST085N15N
CRSS082N15N
Package Marking and Ordering Information
Partꢀ#
Marking
Package
TOꢁ220
TOꢁ263
ReelꢀSize
TapeꢀWidth
N/A
Qty
Packing
Tube
CRST085N15N
CRSS082N15N
N/A
N/A
50pcs
50pcs
ꢁ
ꢁ
Tube
N/A
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drainꢁsourceꢀvoltage
150
V
Continuousꢀdrainꢀcurrent
T
C
ꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)
T
C
ꢀ=ꢀ25°Cꢀ(Packageꢀlimit)
T
C
ꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)
128ꢀ
120
81ꢀ
I
D
A
Pulsedꢀdrainꢀcurrentꢀ(T
C
ꢀ=ꢀ25°C,ꢀt
p
ꢀlimitedꢀbyꢀT
jmax
AvalancheꢀCurrentꢀ(L=0.5mH)
)
I
Dꢀpulse
I
ASꢀ
E
AS(Noteꢀ1)
I
ARꢀ
E
AR(Noteꢀ2)
V
GS
480ꢀ
36ꢀ
A
A
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25ꢃ)
RepeativeꢀavalancheꢀCurrentꢀ(L=0.5mH)
Repeativeꢀavalancheꢀ(L=0.5mH)
324ꢀ
16ꢀ
mJ
A
64ꢀ
mJ
V
GateꢁSourceꢀvoltage
±20
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST085N15N,ꢀCRSS082N15N
华润微电子
(
重庆
)
有限公司
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Powerꢀdissipationꢀ(T
C
ꢀ=ꢀ25°C)
P
tot
227ꢀ
W
T
j
ꢀ,ꢀ
T
stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55…+150
°C
※
.ꢀNotes:
1.EASꢀisꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25
℃
,ꢀLꢀ=ꢀ0.5mH,ꢀIASꢀ=ꢀ36A,ꢀVGSꢀ=ꢀ10V.ꢀ
2.Repetitiveꢀrating,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀRatingsꢀareꢀbasedꢀonꢀlowꢀfrequencyꢀandꢀ
dutyꢀcyclesꢀtoꢀkeepꢀinitialꢀTJꢀ=25°C.
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST085N15N,ꢀCRSS082N15N
华润微电子
(
重庆
)
有限公司
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Thermal Resistance
Parameter
Symbol
Max
0.52ꢀ
60
Unit
R
thJC
Thermalꢀresistance,ꢀjunctionꢀ–ꢀcase.
°C/W
R
thJA
Thermalꢀresistance,ꢀjunctionꢀ–ꢀambient(min.ꢀfootprint)
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drainꢁsourceꢀbreakdownꢀ
voltage
BV
DSS
V
GS
=0V,ꢀI
D
=250uA
V
DS
=V
GS
,I
D
=250uA
150
2
ꢁ
ꢁ
V
V
V
GS(thꢀ)
Gateꢀthresholdꢀvoltage
3
4
V
DS
=150V,V
GS
=0V
T
j
=25°C
Zeroꢀgateꢀvoltageꢀdrainꢀ
current
I
DSS
ꢁ
ꢁ
ꢁ
ꢁ
1
ꢄA
nA
T
j
=125°C
10
Gateꢁsourceꢀleakageꢀ
current
I
GSS
V
GS
=±20V,V
DS
=0V
ꢁ
ꢁ
100
V
GS
=10V,ꢀI
D
=50A
T
j
=25°C
mꢂ
ꢁ
ꢁ
7.0ꢀ
6.8
8.5ꢀ
8.2
TOꢁ220
TOꢁ263
Drainꢁsourceꢀonꢁstateꢀ
resistance
R
DS(on)
V
GS
=10V,ꢀI
D
=50A
T
j
=100°C
mꢂ
S
ꢁ
ꢁ
ꢁ
11.3ꢀ
11.1
91.8
14.1ꢀ
13.9ꢀ
ꢁ
TOꢁ220
TOꢁ263
g
fs
V
DS
=5V,I
D
=50A
Transconductance
Dynamic Characteristic
InputꢀCapacitance
C
iss
2108.5
256
4217
512
8434
1024
V
GS
=0V,ꢀV
DS
=75V,ꢀ
f=1MHz
C
oss
OutputꢀCapacitance
pF
ReverseꢀTransferꢀ
Capacitance
C
rss
7.5
15ꢀ
30
Q
G
Q
gs
GateꢀTotalꢀCharge
GateꢁSourceꢀcharge
GateꢁDrainꢀcharge
Turnꢁonꢀdelayꢀtime
ꢁ
ꢁ
ꢁ
ꢁ
63
21
15
11
126
42
V
GS
=10V,ꢀV
DS
=75V,ꢀ
I
D
=50A,ꢀf=1MHz
nC
Q
gd
30
t
d(on)
22
Vds=75V
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST085N15N,ꢀCRSS082N15N
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Id=100A
华润微电子
(
重庆
)
有限公司
t
r
t
d(off)
t
f
Riseꢀtime
ꢁ
ꢁ
ꢁ
107
54
214
108
204
ns
Rg=2.7ꢂ
Turnꢁoffꢀdelayꢀtime
Fallꢀtime
Vgs=10V;ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
(Noteꢀ3,4)
102
V
GS
=0V,ꢀV
DS
=0V,ꢀ
R
G
Gateꢀresistance
ꢁ
3.0ꢀ
5
ꢂ
f=1MHz
Body Diode Characteristic
Value
typ.
Symbol
Parameter
Unit
V
Test Condition
min.
max.
BodyꢀDiodeꢀForwardꢀ
Voltage
V
SD
t
rr
V
GS
=0V,I
SD
=50A
ꢁ
0.86
100
451
1.4
BodyꢀDiodeꢀReverseꢀ
RecoveryꢀTime
ꢁ
ꢁ
200
902
ns
ISD=100A,ꢀVGS=0V,
dIF/dt=100A/us;
BodyꢀDiodeꢀReverseꢀ
RecoveryꢀCharge
※
.ꢀNotes
Q
rr
nC
3.PulseꢀTestꢀ:ꢀPulseꢀWidthꢀ
≤
ꢀ300us,ꢀdutyꢀcycleꢀ
≤
ꢀ2%.
4.Essentiallyꢀindependentꢀofꢀoperatingꢀtemperature.
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST085N15N,ꢀCRSS082N15N
华润微电子
(
重庆
)
有限公司
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Typical Performance Characteristics
Figꢀ1:ꢀOutputꢀCharacteristics
Figꢀ2:ꢀTransferꢀCharacteristics
300
100
280
10V
6.5V
260
V
DS
=5V
240
80
220
6.0V
200
180
60
160
5.5V
140
120
125°C
25°C
40
20
0
100
V
GS
=5.0V
80
60
40
20
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
DS
(V)
V
GS
(V)
Figꢀ3:ꢀRds(on)ꢀvsꢀDrainꢀCurrentꢀandꢀ
GateꢀVoltage
Figꢀ4:ꢀRds(on)ꢀvsꢀGateꢀVoltage
I
D
=50A
15
14
13
12
11
10
9
10.0ꢀ
9.0ꢀ
8.0ꢀ
7.0ꢀ
6.0ꢀ
5.0ꢀ
4.0ꢀ
V
GS
=10V
8
7
6
5
3
4
5
6
7
8
9
10
10
20
30
40
50
60
70
80
90
100
V
GS
(V)
I
D
(A)
Figꢀ6:ꢀCapacitanceꢀCharacteristics
Figꢀ5:ꢀRds(on)ꢀvs.ꢀTemperature
10000
1000
100
2.8ꢀ
2.5ꢀ
2.2ꢀ
1.9ꢀ
1.6ꢀ
1.3ꢀ
1.0ꢀ
0.7ꢀ
0.4ꢀ
V
GS
=10V
I
D
=50A
Ciss
Coss
Crss
V
GS
=0V
f=1MHz
10
0
10 20 30 40 50 60 70 80 90
100 110 120
25
50
75
100
125
150
175
Tj – Junction Temperature (
°
C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRST085N15N,ꢀCRSS082N15N
华润微电子
(
重庆
)
有限公司
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Figꢀ8:ꢀBodyꢁdiodeꢀForward
Characteristics
Figꢀ7:ꢀGateꢀChargeꢀCharacteristics
10
100
V
DS
=40V
I
D
=50A
8
6
4
2
0
10
125
˚C
1
25
˚C
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
10
20
30
40
50
60
70
Qg (nC)
Figꢀ10:ꢀDrainꢀCurrentꢀDerating
Figꢀ9:ꢀPowerꢀDissipation
140
250
120
100
80
200
150
100
50
60
40
V
GS
≥10V
20
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Figꢀ11:ꢀSafeꢀOperatingꢀArea
1000
1us
10us
Limited by
Rds(on)
100
10
1
100us
1ms
10ms
DC
Single pulse
Tc=25
˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRST085N15N,ꢀCRSS082N15N
华润微电子
(
重庆
)
有限公司
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Figꢀ12:ꢀMax.ꢀTransientꢀThermalꢀImpedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
Single pulse
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
1Eꢁ05
0.0001
0.001
0.01
0.1
t
p
(sec)
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRST085N15N,ꢀCRSS082N15N
华润微电子
(
重庆
)
有限公司
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRST085N15N,ꢀCRSS082N15N
华润微电子
(
重庆
)
有限公司
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Package Outline: TO-220-3L
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
b
4.30ꢀ
1.20ꢀ
2.20ꢀ
0.69ꢀ
1.00ꢀ
0.33ꢀ
14.70ꢀ
8.59ꢀ
11.75ꢀ
4.80ꢀ
1.45ꢀ
2.90ꢀ
0.95ꢀ
1.60ꢀ
0.65ꢀ
16.20ꢀ
9.65ꢀ
13.60ꢀ
0.169ꢀ
0.047ꢀ
0.087ꢀ
0.027ꢀ
0.039ꢀ
0.013ꢀ
0.579ꢀ
0.338ꢀ
0.463ꢀ
0.189ꢀ
0.057ꢀ
0.114ꢀ
0.037ꢀ
0.063ꢀ
0.026ꢀ
0.638ꢀ
0.380ꢀ
0.535ꢀ
b2
c
D
D1
D2
e
2.54ꢀBSC.
0.100ꢀBSC.
E
E1
H1
L
9.60ꢀ
7.00ꢀ
10.60ꢀ
8.46ꢀ
0.378ꢀ
0.276ꢀ
0.244ꢀ
0.496ꢀ
0.106ꢀ
0.478ꢀ
0.417ꢀ
0.333ꢀ
0.276ꢀ
0.583ꢀ
0.150ꢀ
0.650ꢀ
6.20ꢀ
7.00ꢀ
12.60ꢀ
2.70ꢀ
14.80ꢀ
3.80ꢀ
L1
L2
12.13ꢀ
16.50ꢀ
Q
P
2.40ꢀ
3.50ꢀ
3.10ꢀ
3.90ꢀ
0.094ꢀ
0.138ꢀ
0.122ꢀ
0.154ꢀ
©China Resources Microelectronics (Chongqing) Limited
Page 9
CRST085N15N,ꢀCRSS082N15N
华润微电子
(
重庆
)
有限公司
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Package Outline: TO-263
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
4.86ꢀ
0.25ꢀ
2.79ꢀ
0.94ꢀ
1.35ꢀ
0.65ꢀ
1.40ꢀ
9.45ꢀ
8.17ꢀ
Min.
Max.
A
A1
A2
b
4.30ꢀ
0.00ꢀ
2.34ꢀ
0.68ꢀ
1.15ꢀ
0.33ꢀ
1.17ꢀ
8.38ꢀ
6.90ꢀ
0.169ꢀ
0.000ꢀ
0.092ꢀ
0.027ꢀ
0.045ꢀ
0.013ꢀ
0.046ꢀ
0.330ꢀ
0.272ꢀ
0.191ꢀ
0.010ꢀ
0.110ꢀ
0.037ꢀ
0.053ꢀ
0.026ꢀ
0.055ꢀ
0.372ꢀ
0.322ꢀ
b2
c
c2
D
D1
e
2.54ꢀBSC.
0.100ꢀBSC.
E
9.78ꢀ
6.50ꢀ
14.61ꢀ
2.24ꢀ
0.70ꢀ
1.00ꢀ
0.00ꢀ
10.50ꢀ
8.60ꢀ
15.88ꢀ
3.00ꢀ
1.60ꢀ
1.78ꢀ
0.25ꢀ
0.385ꢀ
0.256ꢀ
0.575ꢀ
0.088ꢀ
0.028ꢀ
0.039ꢀ
0.000ꢀ
0.413ꢀ
0.339ꢀ
0.625ꢀ
0.118ꢀ
0.063ꢀ
0.070ꢀ
0.010ꢀ
E1
H
L
L1
L2
L3
©China Resources Microelectronics (Chongqing) Limited
Page 10
CRST085N15N,ꢀCRSS082N15N
华润微电子
(
重庆
)
有限公司
SkyMOS1ꢀNꢁMOSFETꢀ150V,ꢀ7mꢂ,ꢀ120A
Revision History
Revison
1.0
Date
Majorꢀchanges
2018ꢁ11ꢁ02
2019ꢁ02ꢁ28
2019ꢁ05ꢁ28
Releaseꢀofꢀformalꢀversion.
1.1
ReviseꢀBugꢀIdssꢀCondition;
Supplementꢀpackageꢀoutlineꢀinfo.
2.0
Disclaimer
Unlessꢀotherwiseꢀspecifiedꢀinꢀtheꢀdatasheet,ꢀtheꢀproductꢀisꢀdesignedꢀandꢀqulifiedꢀasꢀaꢀstandardꢀcommercialꢀ
productꢀandꢀisꢀnotꢀintendedꢀforꢀuseꢀinꢀapplicationsꢀthatꢀrequireꢀextraordinaryꢀlevelsꢀofꢀqualityꢀandꢀreliability,ꢀsuchꢀ
asꢀautomotive,ꢀaviation/aerospaceꢀandꢀlifeꢁsupportꢀdevicesꢀorꢀsystems.
Anyꢀandꢀallꢀsemicondutorꢀproductsꢀhaveꢀcertainꢀprobabilityꢀtoꢀfailꢀorꢀmalfunction,ꢀwhichꢀmayꢀresultꢀinꢀpersonalꢀ
injury,ꢀdeathꢀorꢀpropertyꢀdamage.ꢀCustomerꢀareꢀsolelyꢀresponsibleꢀforꢀprovidingꢀadequateꢀsafeꢀmeasuresꢀwhenꢀ
designꢀtheirꢀsystems.ꢀ
CRM(CQ)ꢀreservesꢀtheꢀrightꢀtoꢀimproveꢀproductꢀdesign,ꢀfunctionꢀandꢀreliabilityꢀwithoutꢀnotice.
©China Resources Microelectronics (Chongqing) Limited
Page 11
