CRMICRO-CRST030N10N
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CRST030N10N,CRSS028N10N
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.5mꢂ,ꢀ180A
华润微电子(重庆)有限公司
Features
Product Summary
V
DS
100V
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS1ꢀtechnology
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀR
DS(on)
•ꢀExcellentꢀQ
g
xR
DS(on)ꢀ
product(FOM)
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria
R
DS(on)
I
Dꢀ
2.5mꢂ
180A
Applications
•ꢀSynchronousꢀRectificationꢀforꢀAC/DCꢀQuickꢀCharger
•ꢀBatteryꢀmanagement
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)
100% Avalanche Tested
CRST030N10N
CRSS028N10N
Package Marking and Ordering Information
Partꢀ#
Marking
Package
TOꢁ220
TOꢁ263
ReelꢀSize
TapeꢀWidth
N/A
Qty
Packing
Tube
CRST030N10N
CRSS028N10N
N/A
N/A
50pcs
50pcs
ꢁ
ꢁ
Tube
N/A
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drainꢁsourceꢀvoltage
100
V
Continuousꢀdrainꢀcurrent
T
C
ꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)
T
C
ꢀ=ꢀ25°Cꢀ(Packageꢀlimit)
T
C
ꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)
207ꢀ
180
I
D
A
131ꢀ
Pulsedꢀdrainꢀcurrentꢀ(T
C
ꢀ=ꢀ25°C,ꢀt
p
ꢀlimitedꢀbyꢀT
jmax
)
I
Dꢀpulse
E
AS
720ꢀ
529ꢀ
A
mJ
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25
Ω
)
[1]
GateꢁSourceꢀvoltage
V
GS
±20
Powerꢀdissipationꢀ(T
C
ꢀ=ꢀ25°C)
P
tot
227ꢀ
W
°C
T
j
ꢀ,ꢀ
T
stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55…+150
Notes:1.EASꢀwasꢀtestedꢀatꢀTjꢀ=ꢀ25
℃
,ꢀIDꢀ=ꢀ46A.
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST030N10N,CRSS028N10N
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.5mꢂ,ꢀ180A
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Symbol
Max
0.55ꢀ
62
Unit
R
thJC
Thermalꢀresistance,ꢀjunctionꢀ–ꢀcase.
°C/W
R
thJA
Thermalꢀresistance,ꢀjunctionꢀ–ꢀambient(min.ꢀfootprint)
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drainꢁsourceꢀbreakdownꢀ
voltage
BV
DSS
V
GS
=0V,ꢀI
D
=250uA
V
DS
=V
GS
,I
D
=250uA
100
2.2
ꢁ
ꢁ
V
V
V
GS(thꢀ)
Gateꢀthresholdꢀvoltage
3
3.8
V
DS
=100V,V
GS
=0V
T
j
=25°C
Zeroꢀgateꢀvoltageꢀdrainꢀ
current
I
DSS
ꢁ
ꢁ
0.05
ꢁ
1
ꢃA
nA
T
j
=125°C
10
Gateꢁsourceꢀleakageꢀ
current
I
GSS
V
GS
=±20V,V
DS
=0V
ꢁ
±10
±100
V
GS
=10V,ꢀI
D
=90A
TOꢁ220
Drainꢁsourceꢀonꢁstateꢀ
resistance
ꢁ
ꢁ
ꢁ
2.5ꢀ
2.3ꢀ
3.0ꢀ
2.8ꢀ
ꢁ
R
DS(on)
mꢂ
S
TOꢁ263
g
fs
V
DS
=5V,I
D
=90A
Transconductance
197.2
Dynamic Characteristic
InputꢀCapacitance
C
iss
ꢁ
ꢁ
11355
1446
ꢁ
ꢁ
V
GS
=0V,ꢀV
DS
=50V,ꢀ
f=1MHz
C
oss
OutputꢀCapacitance
pF
ReverseꢀTransferꢀ
Capacitance
C
rss
ꢁ
54
ꢁ
Q
G
Q
gs
Q
gd
t
d(on)
t
r
GateꢀTotalꢀCharge
GateꢁSourceꢀcharge
GateꢁDrainꢀcharge
Turnꢁonꢀdelayꢀtime
Riseꢀtime
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
169
67
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
V
GS
=10V,ꢀV
DS
=50V,ꢀ
I
D
=90A,ꢀf=1MHz
nC
30
35
111
84
V
GS
=10V,ꢀV
DD
=50V,ꢀ
R
G_ext
=3.0ꢂ
ns
t
d(off)
t
f
Turnꢁoffꢀdelayꢀtime
Fallꢀtime
112
V
GS
=0V,ꢀV
DS
=0V,ꢀ
f=1MHz
R
G
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST030N10N,CRSS028N10N
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.5mꢂ,ꢀ180A
华润微电子(重庆)有限公司
Body Diode Characteristic
Value
Symbol
Parameter
Unit
V
Test Condition
min.
typ.
max.
BodyꢀDiodeꢀForwardꢀ
Voltage
V
SD
t
rr
V
GS
=0V,I
SD
=90A
ꢁ
0.9
1.4
BodyꢀDiodeꢀReverseꢀ
RecoveryꢀTime
ꢁ
ꢁ
101
338
ꢁ
ꢁ
ns
I
F
=90A,ꢀ
dI/dt=100A/ꢃs
BodyꢀDiodeꢀReverseꢀ
RecoveryꢀCharge
Q
rr
nC
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST030N10N,CRSS028N10N
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.5mꢂ,ꢀ180A
华润微电子(重庆)有限公司
Typical Performance Characteristics
Figꢀ2:ꢀTransferꢀCharacteristics
Figꢀ1:ꢀOutputꢀCharacteristics
400
10V
8V
6.5V
V
DS
=5V
350
300
250
200
150
100
50
420
350
280
210
140
70
6V
5.5V
125°C
25°C
5V
4V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
7
V
DS
(V)
V
GS
(V)
3:ꢀRds(on)ꢀvsꢀDrainꢀCurrentꢀandꢀ
Figꢀ4:ꢀRds(on)ꢀvsꢀGateꢀVoltage
GateꢀVoltage
20
16
12
8
4.0ꢀ
I
D
=90A
V
GS
=10V
3.0ꢀ
2.0ꢀ
1.0ꢀ
0.0ꢀ
150°C
4
25°C
0
2
3
4
5
6
7
8
9
10
0
50
100
150
200
V
GS
(V)
I
D
(A)
Figꢀ6:ꢀCapacitanceꢀCharacteristics
Figꢀ5:ꢀRds(on)ꢀvs.ꢀTemperature
2.4ꢀ
10000
1000
100
I
D
=90A
Ciss
2.2ꢀ
2.0ꢀ
1.8ꢀ
1.6ꢀ
1.4ꢀ
1.2ꢀ
1.0ꢀ
0.8ꢀ
Coss
V
GS
=10V
V
GS
=0V
f=1MHz
Crss
10
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
Tj – Junction Temperature (
°
C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST030N10N,CRSS028N10N
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.5mꢂ,ꢀ180A
华润微电子(重庆)有限公司
Figꢀ8:ꢀBodyꢁdiodeꢀForwardꢀ
Characteristics
Figꢀ7:ꢀGateꢀChargeꢀCharacteristics
10
100
V
DS
=50V
I
D
=90A
8
6
4
2
0
10
125
˚C
25
˚C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0
30
60
90
120
150
180
V
SD
– Diode Forward Voltage(V)
Qg (nC)
Figꢀ10:ꢀDrainꢀCurrentꢀDerating
Figꢀ9:ꢀPowerꢀDissipation
200
180
160
140
120
100
80
250
200
150
100
50
60
V
GS
≥10V
40
20
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Figꢀ11:ꢀSafeꢀOperatingꢀArea
1000
Limited by
Rds(on)
1us
10us
100
10
1
100us
1ms
10ms
DC
Single pulse
Tc=25
˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRST030N10N,CRSS028N10N
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.5mꢂ,ꢀ180A
华润微电子(重庆)有限公司
Figꢀ12:ꢀMax.ꢀTransientꢀThermalꢀImpedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
0.001
1Eꢁ05
0.0001
0.001
0.01
0.1
t
p
(sec)
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRST030N10N,CRSS028N10N
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.5mꢂ,ꢀ180A
华润微电子(重庆)有限公司
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRST030N10N,CRSS028N10N
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.5mꢂ,ꢀ180A
华润微电子(重庆)有限公司
Package Outline: TO-220-3L
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
b
4.30ꢀ
1.20ꢀ
2.20ꢀ
0.69ꢀ
1.00ꢀ
0.33ꢀ
14.70ꢀ
8.59ꢀ
11.75ꢀ
4.80ꢀ
1.45ꢀ
2.90ꢀ
0.95ꢀ
1.60ꢀ
0.65ꢀ
16.20ꢀ
9.65ꢀ
13.60ꢀ
0.169ꢀ
0.047ꢀ
0.087ꢀ
0.027ꢀ
0.039ꢀ
0.013ꢀ
0.579ꢀ
0.338ꢀ
0.463ꢀ
0.189ꢀ
0.057ꢀ
0.114ꢀ
0.037ꢀ
0.063ꢀ
0.026ꢀ
0.638ꢀ
0.380ꢀ
0.535ꢀ
b2
c
D
D1
D2
e
2.54ꢀBSC.
0.100ꢀBSC.
E
E1
H1
L
9.60ꢀ
7.00ꢀ
10.60ꢀ
8.46ꢀ
0.378ꢀ
0.276ꢀ
0.244ꢀ
0.496ꢀ
0.106ꢀ
0.478ꢀ
0.417ꢀ
0.333ꢀ
0.276ꢀ
0.583ꢀ
0.150ꢀ
0.650ꢀ
6.20ꢀ
7.00ꢀ
12.60ꢀ
2.70ꢀ
14.80ꢀ
3.80ꢀ
L1
L2
12.13ꢀ
16.50ꢀ
Q
P
2.40ꢀ
3.50ꢀ
3.10ꢀ
3.90ꢀ
0.094ꢀ
0.138ꢀ
0.122ꢀ
0.154ꢀ
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRST030N10N,CRSS028N10N
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.5mꢂ,ꢀ180A
华润微电子(重庆)有限公司
Package Outline: TO-263
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
4.86ꢀ
0.25ꢀ
2.79ꢀ
0.94ꢀ
1.35ꢀ
0.65ꢀ
1.40ꢀ
9.45ꢀ
8.17ꢀ
Min.
Max.
A
A1
A2
b
4.30ꢀ
0.00ꢀ
2.34ꢀ
0.68ꢀ
1.15ꢀ
0.33ꢀ
1.17ꢀ
8.38ꢀ
6.90ꢀ
0.169ꢀ
0.000ꢀ
0.092ꢀ
0.027ꢀ
0.045ꢀ
0.013ꢀ
0.046ꢀ
0.330ꢀ
0.272ꢀ
0.191ꢀ
0.010ꢀ
0.110ꢀ
0.037ꢀ
0.053ꢀ
0.026ꢀ
0.055ꢀ
0.372ꢀ
0.322ꢀ
b2
c
c2
D
D1
e
2.54ꢀBSC.
0.100ꢀBSC.
E
9.78ꢀ
6.50ꢀ
14.61ꢀ
2.24ꢀ
0.70ꢀ
1.00ꢀ
0.00ꢀ
10.50ꢀ
8.60ꢀ
15.88ꢀ
3.00ꢀ
1.60ꢀ
1.78ꢀ
0.25ꢀ
0.385ꢀ
0.256ꢀ
0.575ꢀ
0.088ꢀ
0.028ꢀ
0.039ꢀ
0.000ꢀ
0.413ꢀ
0.339ꢀ
0.625ꢀ
0.118ꢀ
0.063ꢀ
0.070ꢀ
0.010ꢀ
E1
H
L
L1
L2
L3
©China Resources Microelectronics (Chongqing) Limited
Page 9
CRST030N10N,CRSS028N10N
SkyMOS1ꢀNꢁMOSFETꢀ100V,ꢀ2.5mꢂ,ꢀ180A
华润微电子(重庆)有限公司
Revision History
Revison
1.0
Date
Majorꢀchanges
2018ꢁ09ꢁ28
2019ꢁ01ꢁ04
2019ꢁ05ꢁ28
Releaseꢀofꢀformalꢀversion.
2.0
AddꢀTOꢁ263ꢀpackageꢀtypeꢀinformation
Supplementꢀpackageꢀoutlineꢀinfo.
3.0
Disclaimer
Unlessꢀotherwiseꢀspecifiedꢀinꢀtheꢀdatasheet,ꢀtheꢀproductꢀisꢀdesignedꢀandꢀqulifiedꢀasꢀaꢀstandardꢀcommercialꢀ
productꢀandꢀisꢀnotꢀintendedꢀforꢀuseꢀinꢀapplicationsꢀthatꢀrequireꢀextraordinaryꢀlevelsꢀofꢀqualityꢀandꢀreliability,ꢀ
suchꢀasꢀautomotive,ꢀaviation/aerospaceꢀandꢀlifeꢁsupportꢀdevicesꢀorꢀsystems.
Anyꢀandꢀallꢀsemicondutorꢀproductsꢀhaveꢀcertainꢀprobabilityꢀtoꢀfailꢀorꢀmalfunction,ꢀwhichꢀmayꢀresultꢀinꢀpersonalꢀ
injury,ꢀdeathꢀorꢀpropertyꢀdamage.ꢀCustomerꢀareꢀsolelyꢀresponsibleꢀforꢀprovidingꢀadequateꢀsafeꢀmeasuresꢀwhenꢀ
designꢀtheirꢀsystems.ꢀ
CRM(CQ)ꢀreservesꢀtheꢀrightꢀtoꢀimproveꢀproductꢀdesign,ꢀfunctionꢀandꢀreliabilityꢀwithoutꢀnotice.
©China Resources Microelectronics (Chongqing) Limited
Page 10
